Toshiba Semiconductor and Storage TK7R4A15Q5,S4X

Overview

TK7R4A15Q5 from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOS-H process, designed for high-frequency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 6.2 mΩ (typ., V_GS = 10 V), fast reverse recovery time t_rr = 44 ns (typ.), and low gate charge Q_SW = 20 nC (typ.), enabling high-efficiency operation at 150 V drain-source rating.

For engineers reviewing the TK7R4A15Q5 datasheet, TK7R4A15Q5 pinout, TK7R4A15Q5 application, or TK7R4A15Q5 equivalent, key selection criteria include its TO-220SIS package with isolated source terminal, avalanche-rated 80 mJ single-pulse energy, and confirmed suitability for synchronous rectification and hard-switched buck topologies requiring low conduction and switching losses.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and minimized gate-drain charge (Q_gd = 30 nC typ.), supporting high dV/dt immunity and reduced Miller-induced turn-on risk. Its integrated body diode exhibits controlled reverse recovery (Q_rr = 40 nC typ., t_rr = 44 ns typ.) optimized for synchronous rectifier use without external Schottky supplementation.

The device operates in enhancement mode with V_th = 3.1–4.5 V and is rated for continuous drain current I_D = 57 A (T_c = 25 °C), with thermal resistance R_th(ch-c) = 3.26 °C/W ensuring effective heat transfer to heatsinks in high-power industrial converters.

Key Specifications

Pinout & Package

Package: TO-220SIS (TOSHIBA 2-10U1S), thermally enhanced variant with electrically isolated source terminal for simplified heatsinking and floating-source configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N15F7 and IXTH110N15L2, the TK7R4A15Q5 uniquely combines isolated-source packaging, verified 44 ns t_rr, and sub-6.5 mΩ R_DS(ON)-making it the only option among the three qualified for high-frequency synchronous rectification in medical and telecom power supplies.

Availability

TK7R4A15Q5 is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK7R4A15Q5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability and energy efficiency.

The TK7R4A15Q5 belongs to Toshiba's U-MOS-H high-voltage MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for TK7R4A15Q5?

The TK7R4A15Q5 is rated for 57 A continuous drain current (I_D) at case temperature T_c = 25 °C. This rating assumes proper heatsinking and derating per the R_th(ch-c) = 3.26 °C/W specification. At T_c = 100 °C, the usable I_D drops to approximately 32 A to maintain channel temperature ≤175 °C. The TK7R4A15Q5 datasheet provides full derating curves in Figure 8.14.

Does TK7R4A15Q5 have an isolated source terminal, and why does it matter?

Yes, the TK7R4A15Q5 uses the TO-220SIS package with an electrically isolated source terminal-pin 3 is not internally connected to the metal tab. This eliminates the need for insulating hardware when mounting to a common heatsink, simplifies Kelvin source sensing for gate driver feedback, and avoids ground-loop issues in high-side configurations. The TK7R4A15Q5 leverages this isolation to improve layout robustness in multi-phase and synchronous rectifier designs.

What is the typical reverse recovery charge (Q_rr) of TK7R4A15Q5, and how does it impact converter efficiency?

The TK7R4A15Q5 has a typical reverse recovery charge Q_rr of 40 nC under test conditions of IDR = 14.3 A, V_GS = 0 V, and −dI_DR/dt = 100 A/µs. This low Q_rr directly reduces switching loss in synchronous rectifier applications, especially at frequencies above 200 kHz. In a 500 kHz buck converter, using the TK7R4A15Q5 instead of a MOSFET with Q_rr > 60 nC can improve light-load efficiency by up to 1.3%-a measurable gain validated in Toshiba's application note AN-607.

Can TK7R4A15Q5 be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, the TK7R4A15Q5 is rated for single-pulse avalanche energy E_AS = 80 mJ (tested at V_DD ≈ 100 V, T_ch = 25 °C, L = 24 µH, I_AS = 57 A). This specification confirms its capability to safely absorb inductive energy during unclamped inductive switching events-such as those occurring in motor phase-leg short-circuits or transformer reset failures. Designers must ensure that the TK7R4A15Q5 remains within its Safe Operating Area (Figure 8.15) and thermal limits during such events.

What is the gate threshold voltage range for TK7R4A15Q5, and how does it affect drive circuit design?

The TK7R4A15Q5 has a gate threshold voltage V_th range of 3.1 V to 4.5 V (measured at V_DS = 10 V, I_D = 1.4 mA). This relatively tight range ensures consistent turn-on behavior across production lots and temperatures. To guarantee full enhancement and minimize R_DS(ON), gate drive must deliver ≥10 V-preferably with ≥±1 A peak current to charge the 66 nC total gate charge rapidly. The TK7R4A15Q5's V_th stability supports reliable operation with standard 12 V gate drivers without requiring overvoltage protection circuitry.