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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK7S10N1Z,LQ

Name: TK7S10N1Z,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TK7S10N1Z,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK7S10N1Z,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK7S10N1Z,LQ.pdf

Description:: MOSFET N-CH 100V 7A DPAK

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Product details

Overview

TK7S10N1Z from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-reliability automotive switching. It delivers 100 V V_DSS, 40 mΩ R_DS(ON) (typ. at V_GS = 10 V), and 7 A continuous drain current, operating up to 175 °C channel temperature in DPAK+ (2-7M1A) package.

For engineers reviewing the TK7S10N1Z datasheet, TK7S10N1Z pinout, TK7S10N1Z application, or TK7S10N1Z equivalent, this device is selected for automotive voltage regulators, motor drivers, and industrial DC-DC converters where low conduction loss, avalanche ruggedness (E_AS = 19.6 mJ), and thermal robustness are critical.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low R_DS(ON) while maintaining strong gate oxide reliability and high dV_DS/dt ruggedness (8.4 V/ns). Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures clean turn-on with standard 10 V gate drive.

The device integrates a fast intrinsic body diode with t_rr = 47 ns and Q_rr = 28 nC, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by R_th(ch-c) = 3.0 °C/W and a heatsink-connected drain tab in the DPAK+ package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports 48 V automotive systems with 2× safety margin against transients
R_DS(ON)	40 mΩ (typ. @ V_GS = 10 V) - Enables <1 W conduction loss at 5 A, reducing heatsink requirements
I_D (DC)	7 A (@ T_c = 25 °C) - Sustains continuous load current in compact motor driver H-bridges
E_AS	19.6 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless designs
V_th	2.0–4.0 V - Compatible with 3.3 V/5 V logic-level gate drivers when used with appropriate margin
C_iss	470 pF - Balances switching speed and EMI control in 100–500 kHz SMPS applications
Q_g	7.1 nC - Enables efficient gate driving with ≤1 W average gate power at 200 kHz

Pinout & Package

DPAK+ (Toshiba package code 2-7M1A), surface-mount, thermally enhanced with exposed drain pad acting as heatsink interface. Weight: 0.36 g (typ.). RoHS-compliant marking per EU Directive 2011/65/EU.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±20 V gate-source voltage; sensitive to ESD
2	Drain (heatsink)	Main power output; electrically connected to exposed copper pad for thermal transfer to PCB
3	Source	Reference node for gate drive and current sensing; ties to low-side return path

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock
Low R_DS(ON) × Q_g figure-of-merit	284 mΩ·nC - Optimized for high-frequency, high-efficiency DC-DC conversion
High dV_DS/dt ruggedness	8.4 V/ns - Resists false turn-on during fast voltage transients in half-bridge configurations
Fast body diode recovery	t_rr = 47 ns, Q_rr = 28 nC - Reduces switching losses and voltage overshoot in freewheeling paths
175 °C maximum channel temperature	Enables operation in sealed enclosures or high-ambient zones without derating below 7 A

Applications

Automotive Voltage Regulators	Brushed DC Motor Drivers
Use Scenario: High-side switch in 12 V/48 V automotive DC-DC converters supplying ADAS ECUs and infotainment systems. IC Role / Device Role / Timing Role: Power switch controlling buck converter primary side; operates at 200–300 kHz with synchronous rectification. Use Value: 40 mΩ R_DS(ON) limits conduction loss to <0.5 W at 3.5 A, enabling compact thermal design in space-constrained modules.	Use Scenario: Low-side switch in H-bridge for HVAC blower motors and power seat actuators. IC Role / Device Role / Timing Role: PWM-controlled current sink; handles bidirectional 7 A peak loads with <10 µs turn-off delay. Use Value: 19.6 mJ single-pulse avalanche rating absorbs inductive kickback without snubbers, simplifying board layout.
Industrial Switching Power Supplies	On-Board Battery Chargers
Use Scenario: Primary-side switch in isolated flyback or forward converters for factory automation I/O modules. IC Role / Device Role / Timing Role: High-voltage switching element with 100 V rating accommodating 80 V input rails plus surge margin. Use Value: 3.0 °C/W channel-to-case thermal resistance allows direct mounting to 2 oz copper thermal pads, eliminating external heatsinks.	Use Scenario: Isolation-stage switch in 400 V–12 V bi-directional OBCs for mild-hybrid vehicles. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter; leverages low Q_rr for zero-voltage switching. Use Value: 28 nC reverse recovery charge minimizes dead-time losses and improves efficiency above 94% at full load.

Automotive Voltage Regulators

Brushed DC Motor Drivers

Use Scenario: High-side switch in 12 V/48 V automotive DC-DC converters supplying ADAS ECUs and infotainment systems.

IC Role / Device Role / Timing Role: Power switch controlling buck converter primary side; operates at 200–300 kHz with synchronous rectification.

Use Value: 40 mΩ R_DS(ON) limits conduction loss to <0.5 W at 3.5 A, enabling compact thermal design in space-constrained modules.

Use Scenario: Low-side switch in H-bridge for HVAC blower motors and power seat actuators.

IC Role / Device Role / Timing Role: PWM-controlled current sink; handles bidirectional 7 A peak loads with <10 µs turn-off delay.

Use Value: 19.6 mJ single-pulse avalanche rating absorbs inductive kickback without snubbers, simplifying board layout.

Industrial Switching Power Supplies

On-Board Battery Chargers

Use Scenario: Primary-side switch in isolated flyback or forward converters for factory automation I/O modules.

IC Role / Device Role / Timing Role: High-voltage switching element with 100 V rating accommodating 80 V input rails plus surge margin.

Use Value: 3.0 °C/W channel-to-case thermal resistance allows direct mounting to 2 oz copper thermal pads, eliminating external heatsinks.

Use Scenario: Isolation-stage switch in 400 V–12 V bi-directional OBCs for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter; leverages low Q_rr for zero-voltage switching.

Use Value: 28 nC reverse recovery charge minimizes dead-time losses and improves efficiency above 94% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL10DN10LH	100 V, 10 mΩ R_DS(ON), DFN5x6 package, no AEC-Q101 certification	Higher efficiency but lacks automotive qualification; unsuitable for underhood use	Select only for non-automotive industrial SMPS where qualification is not required
IRF3205PBF	55 V V_DSS, 8 mΩ R_DS(ON), TO-220 package, no AEC-Q101	Lower voltage rating and larger footprint; cannot replace TK7S10N1Z in 48 V systems	Consider only for legacy 12 V/24 V motor drives with existing TO-220 layouts

Compared with STL10DN10LH and IRF3205PBF, the TK7S10N1Z uniquely combines AEC-Q101 compliance, 100 V rating, and DPAK+ thermal performance-making it the only drop-in solution for new automotive power stages requiring both reliability and space efficiency.

Availability

TK7S10N1Z is available at Aetrix Electronics and suitable for automotive voltage regulators, brushed DC motor drivers, and industrial switching power supplies requiring stable component supply across extended product lifecycles.

Supply support for TK7S10N1Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors and power devices with emphasis on automotive, industrial, and consumer applications.

The TK7S10N1Z belongs to Toshiba's U-MOSⅧ-H automotive-qualified MOSFET family, engineered specifically for high-efficiency, high-reliability switching in engine control units, battery management, and ADAS power subsystems.

FAQ

What is the gate threshold voltage range for TK7S10N1Z?

The TK7S10N1Z has a gate threshold voltage (V_th) of 2.0–4.0 V, measured at V_DS = 10 V and I_D = 0.1 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs when combined with appropriate gate drive strength and layout practices. The TK7S10N1Z must not be operated near the lower V_th limit without verifying sufficient Miller immunity in the target circuit.

Is TK7S10N1Z qualified for automotive applications?

Yes, the TK7S10N1Z is fully AEC-Q101 qualified, having passed stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing. This qualification confirms its suitability for automotive powertrain, chassis, and body electronics where ambient temperatures reach 125 °C and lifetime reliability exceeds 15 years. The TK7S10N1Z datasheet explicitly states AEC-Q101 compliance in Section 2.

What is the maximum continuous drain current for TK7S10N1Z?

The TK7S10N1Z supports 7 A continuous drain current (I_D) at case temperature T_c = 25 °C. At higher case temperatures, current must be derated per the Safe Operating Area curve in Figure 8.13 of the datasheet. For example, at T_c = 100 °C, the maximum I_D drops to approximately 4.2 A. The TK7S10N1Z's 3.0 °C/W thermal resistance enables effective heat removal via PCB copper.

Does TK7S10N1Z include an integrated body diode?

Yes, the TK7S10N1Z features an inherent parasitic body diode between source and drain, characterized with reverse recovery time (t_rr) of 47 ns and reverse recovery charge (Q_rr) of 28 nC at I_DR = 7 A. This diode is usable for freewheeling in inductive loads but is not optimized for ultra-fast switching; external Schottky diodes may be added for critical timing paths. The TK7S10N1Z body diode parameters are specified in Section 6.4 of the official datasheet.

What package type does TK7S10N1Z use?

The TK7S10N1Z uses the DPAK+ package (Toshiba designation 2-7M1A), a surface-mount variant of DPAK with enhanced thermal performance via an enlarged drain pad. It has three terminals: Gate (pin 1), Drain/heatsink (pin 2), and Source (pin 3). The package weighs 0.36 g and complies with RoHS Directive 2011/65/EU, as confirmed in Section 7 of the TK7S10N1Z datasheet.

TK7S10N1Z,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 48mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 7.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 470 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK+

TK7S10N1Z,LQ FAQ

1.How can I place an order for TK7S10N1Z,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK7S10N1Z,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK7S10N1Z,LQ reliable?

The price and inventory of TK7S10N1Z,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7S10N1Z,LQ is usually 5 days.

3.What payment methods are accepted for TK7S10N1Z,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7S10N1Z,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK7S10N1Z,LQ?

TK7S10N1Z,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK7S10N1Z,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK7S10N1Z,LQ?

For technical support, including TK7S10N1Z,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7S10N1Z,LQ requirements.

6.How does Aetrix verify that TK7S10N1Z,LQ is sourced from the original manufacturer or authorized distributors?

All TK7S10N1Z,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7S10N1Z,LQ meets industry standards.

7.What is the process for return or replacement of TK7S10N1Z,LQ?

All TK7S10N1Z,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK7S10N1Z,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK7S10N1Z,LQ part is unused and in its original packaging.

Return procedure for TK7S10N1Z,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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