Toshiba Semiconductor and Storage TK7S10N1Z,LXHQ

Overview

TK7S10N1Z from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel MOSFET (U-MOSⅧ-H) designed for high-reliability automotive power switching. It delivers 100 V drain-source breakdown voltage, 40 mΩ typical R_DS(ON) at V_GS = 10 V, and 7 A DC drain current in DPAK+ package - enabling efficient operation in motor drivers and switching voltage regulators.

For engineers reviewing the TK7S10N1Z datasheet, TK7S10N1Z pinout, TK7S10N1Z application, or TK7S10N1Z equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C channel temperature rating, single-pulse avalanche energy of 19.6 mJ, and gate threshold voltage range of 2.0–4.0 V under automotive-grade thermal and reliability constraints.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H process to achieve low conduction loss and robust switching performance. Its enhancement-mode operation with V_th = 2.0–4.0 V ensures reliable turn-on control, while the integrated body diode supports freewheeling in inductive loads with t_rr = 47 ns and Q_rr = 28 nC.

The device features a heatsink-connected drain terminal (Pin 2) and is rated for 8.4 V/ns dV_DS/dt ruggedness, supporting stable operation in fast-switching topologies. Thermal resistance R_th(ch-c) = 3.0 °C/W enables effective heat transfer to PCB copper or external heatsinks under continuous 7 A DC load.

Key Specifications

Pinout & Package

DPAK+ (TOSHIBA 2-7M1A) package with exposed drain pad for thermal conduction and mechanical stability. Weight: 0.36 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with STL10DN10LH and IRF3205PBF, the TK7S10N1Z offers optimal balance of AEC-Q101 compliance, 100 V rating, and compact DPAK+ thermal performance - making it uniquely suited for space-constrained, thermally demanding automotive power stages where qualification and voltage margin are mandatory.

Availability

TK7S10N1Z is available at Aetrix Electronics and suitable for automotive engine control, switching voltage regulators, and motor drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TK7S10N1Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.

The TK7S10N1Z belongs to Toshiba's U-MOSⅧ-H automotive MOSFET product line, engineered specifically for high-efficiency, high-ruggedness power switching in engine control units, electric power steering, and ADAS subsystems.

FAQ

Is TK7S10N1Z qualified for automotive applications?

Yes, TK7S10N1Z is AEC-Q101 qualified and rated for operation from –55 °C to +175 °C channel temperature. It undergoes rigorous stress testing including temperature cycling, humidity bias, and mechanical shock - confirming suitability for under-hood automotive systems such as fuel injection drivers and EPS motor controllers.

What is the maximum continuous drain current for TK7S10N1Z?

The TK7S10N1Z supports 7 A DC drain current at case temperature T_c = 25 °C. Derating applies above this temperature per the Safe Operating Area curve; at T_c = 100 °C, maximum continuous current drops to approximately 4.2 A due to thermal limits defined by R_th(ch-c) = 3.0 °C/W.

Does TK7S10N1Z include an integrated body diode?

Yes, TK7S10N1Z features an integrated parasitic body diode with reverse recovery time t_rr = 47 ns (typ.) and reverse recovery charge Q_rr = 28 nC (typ.) at I_DR = 7 A. This enables freewheeling in half-bridge and synchronous rectifier configurations without requiring an external diode.

What package type does TK7S10N1Z use, and how is thermal management handled?

TK7S10N1Z uses the DPAK+ package (TOSHIBA 2-7M1A), with Pin 2 (Drain) connected to an exposed metal heatsink pad. Thermal resistance from channel to case is R_th(ch-c) = 3.0 °C/W, allowing efficient heat transfer to PCB copper pours or external heatsinks - critical for sustaining 7 A DC in automotive ambient conditions.

Can TK7S10N1Z replace older U-MOS devices like TK7A10N1L in new designs?

TK7S10N1Z is not a direct drop-in replacement for TK7A10N1L due to differences in gate threshold voltage (2.0–4.0 V vs. 1.0–2.5 V) and R_DS(ON) (40 mΩ vs. 55 mΩ). While both are 100 V AEC-Q101 MOSFETs in DPAK+, gate drive timing and layout review are required before substitution to avoid unintended turn-on or thermal mismatch.