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Toshiba Semiconductor and Storage TK8A50D(STA4,Q,M)
- Part No.:
- TK8A50D(STA4,Q,M)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK8A50D(STA4,Q,M).pdf
- Description:
- MOSFET N-CH 500V 8A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:95
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Product details
Overview
TK8A50D(STA4,Q,M) from Toshiba is an N-channel enhancement-mode power MOSFET designed for high-voltage switching regulator applications. It features a 500 V drain-source breakdown voltage, 0.7 Ω typical RDS(ON) at VGS = 10 V and ID = 4 A, 4.0 S typical forward transfer admittance, 8 A continuous drain current, and SC-67 package with isolated heatsink-compatible mounting.
For engineers reviewing the TK8A50D(STA4,Q,M) datasheet, TK8A50D(STA4,Q,M) pinout, TK8A50D(STA4,Q,M) application, or TK8A50D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (165 mJ single-pulse), thermal resistance (3.125 °C/W channel-to-case), gate charge (16 nC), diode reverse recovery characteristics (1200 ns trr), and RoHS-compliant marking under JEITA SC-67 footprint.
Technical Context
This π-MOSⅦ-generation device uses planar vertical DMOS structure optimized for hard-switched DC-DC converters and offline SMPS. Its 2.0–4.0 V gate threshold enables reliable turn-on with standard 5 V or 10 V gate drivers while maintaining low leakage (≤10 μA at 500 V).
The integrated body diode supports synchronous rectification in flyback and forward topologies, with −1.7 V forward voltage at 8 A and controlled reverse recovery (Qrr = 10 μC). Avalanche-rated operation allows robust handling of inductive switching transients without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Supports 400 V AC input rectified systems with margin for line surges and ringing. |
| RDS(ON) | 0.7 Ω (typ.) - Enables <1.1 W conduction loss at 4 A, reducing heatsink requirements in 50–100 W SMPS. |
| ID (cont) | 8 A - Rated for continuous operation up to Tc = 25°C; derates linearly above 25°C case temperature. |
| EAS | 165 mJ - Withstands single inductive energy spikes (e.g., transformer leakage, relay de-energization) without failure. |
| Qg | 16 nC - Determines gate drive power and switching speed; compatible with standard 1 A peak gate drivers. |
| Ciss | 800 pF - Impacts high-frequency gate drive loop stability and EMI filter design in >100 kHz designs. |
| Vth | 2.0–4.0 V - Ensures clean turn-on with TTL/CMOS logic-level drivers while rejecting noise-induced false triggering. |
Pinout & Package
TK8A50D(STA4,Q,M) is housed in the JEITA SC-67 package (Toshiba designation: 2-10U1B), a through-hole, isolated-tab power package with 3 leads and 1.7 g typical weight. The metal tab is electrically connected to the drain and serves as the primary thermal path to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ≤±30 V rating and low-impedance drive to minimize switching losses. |
| 2 (Drain) | High-side power terminal | Connected to primary-side high-voltage rail (e.g., rectified AC line); electrically tied to heatsink tab. |
| 3 (Source) | Reference terminal | Serves as return path for load current and gate drive reference; must be routed with low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| π-MOSⅦ process technology | Delivers lower RDS(ON) × Qg figure-of-merit than prior generations, improving efficiency in 65–300 kHz SMPS. |
| Avalanche-rated operation | Guarantees 165 mJ single-pulse energy handling without parameter shift-eliminates need for external clamping in many flyback designs. |
| Integrated fast-recovery body diode | 1200 ns trr and 10 μC Qrr enable use in quasi-resonant and discontinuous conduction mode without external diode. |
| Thermal performance | 3.125 °C/W channel-to-case resistance allows 40 W dissipation at ΔT = 125°C, supporting compact heatsink integration. |
| RoHS-compliant marking | [[G]]/RoHS COMPATIBLE label confirms compliance with EU Directive 2011/65/EU; no lead or hazardous substance exemptions applied. |
Applications
| AC-DC Adapter | Industrial SMPS |
|---|---|
|
Use Scenario: 36 W universal-input (90–264 VAC) adapter for industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side switch in DCM flyback topology operating at 65 kHz with 100% duty-cycle capability during startup. Use Value: Low RDS(ON) reduces conduction loss by 22% vs. legacy 1 Ω MOSFETs; avalanche rating absorbs transformer leakage spikes without snubber. |
Use Scenario: 75 W open-frame power supply for factory automation controllers with wide ambient temperature range (−40°C to +70°C). IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter, driven by UC3844-based controller with 15 V gate bias. Use Value: Stable Vth over temperature ensures consistent turn-on timing; 150°C channel rating maintains reliability at elevated case temperatures. |
| LED Driver | UPS Inverter Stage |
|
Use Scenario: Constant-current LED driver for outdoor signage with surge immunity to ±2 kV line transients. IC Role / Device Role / Timing Role: High-side switch in buck-derived constant-current regulator, operating in CCM with 200 kHz PWM dimming. Use Value: 500 V VDSS provides headroom for 1.5 kV surge clamping; low Qg enables efficient high-frequency dimming control. |
Use Scenario: Half-bridge switch in 1 kVA online UPS inverter stage delivering 230 VAC output from 360 VDC bus. IC Role / Device Role / Timing Role: Upper-leg switch in complementary-driven half-bridge, synchronized with IR2110 gate driver and dead-time control. Use Value: Fast tr/tf (20/12 ns) minimizes overlap loss; isolated tab simplifies heatsinking in dual-switch configuration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK50ZFP | 500 V VDSS, 0.75 Ω RDS(ON), Zener-protected gate, TO-220FP package (non-isolated tab) | Lacks avalanche rating (EAS not specified); requires external gate protection diode | Preferred where cost sensitivity outweighs need for guaranteed avalanche ruggedness and isolated mounting. |
| IRFBC40APBF | 600 V VDSS, 0.85 Ω RDS(ON), 4.5 A ID, TO-220AB package (isolated tab) | Higher voltage rating but lower current and higher RDS(ON); no specified Qrr or trr | Selected when system requires 600 V margin and body diode recovery is managed externally or not critical. |
Compared with STP8NK50ZFP and IRFBC40APBF, TK8A50D(STA4,Q,M) offers verified single-pulse avalanche energy (165 mJ), lower RDS(ON), and tighter Vth tolerance-making it optimal for unclamped inductive switching in cost-constrained industrial SMPS where reliability under transient stress is mandatory.
Availability
TK8A50D(STA4,Q,M) is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and UPS inverter stages requiring stable component supply, long-lifecycle support, and RoHS-compliant through-hole power MOSFETs.
Supply support for TK8A50D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in discrete power MOSFET design and manufacturing.
The TK8A50D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ family of high-voltage N-channel MOSFETs engineered specifically for efficiency-critical, high-reliability switching power supplies in industrial and commercial equipment.
FAQ
What is the maximum continuous drain current rating for TK8A50D(STA4,Q,M) at 100°C case temperature?
The TK8A50D(STA4,Q,M) has a continuous drain current rating of 8 A at Tc = 25°C. At 100°C case temperature, the rating derates linearly per the Safe Operating Area curve: using Rth(ch-c) = 3.125 °C/W and Tch(max) = 150°C, the allowable power dissipation drops to 15.6 W, yielding ~3.9 A continuous current. Always verify against the SOA graph in the official datasheet for pulsed conditions.
Does TK8A50D(STA4,Q,M) have a built-in gate protection diode?
No, the TK8A50D(STA4,Q,M) does not integrate a gate protection diode. Its absolute maximum gate-source voltage is ±30 V, and gate leakage is specified at ±1 μA. External Zener clamping (e.g., 15 V TVS) is recommended in noisy environments or when driving with non-isolated controllers to prevent gate oxide damage.
Can TK8A50D(STA4,Q,M) be used in synchronous rectification configurations?
The TK8A50D(STA4,Q,M) is not optimized for synchronous rectification due to its relatively high body diode forward voltage (−1.7 V at 8 A) and 1200 ns reverse recovery time. While functional in low-frequency DCM flyback, dedicated SR MOSFETs with lower VSD and faster trr are preferred for efficiency above 50 kHz or in CCM operation.
What is the meaning of "STA4,Q,M" in the full part number TK8A50D(STA4,Q,M)?
"STA4,Q,M" denotes Toshiba's internal packaging and marking variant: STA4 indicates tape-and-reel packaging per JEDEC standards, Q specifies RoHS-compliant lead-free plating, and M identifies the 2-10U1B (SC-67) molded package with isolated tab. This suffix confirms mechanical and environmental compliance-not electrical differentiation from base TK8A50D.
Is TK8A50D(STA4,Q,M) suitable for automotive applications?
No, TK8A50D(STA4,Q,M) is not qualified for automotive use. Toshiba explicitly excludes automotive applications in its "Restrictions on Product Use" notice, citing lack of AEC-Q101 qualification, absence of PPAP documentation, and undefined failure rate data for automotive temperature and lifetime requirements. It is intended for industrial and commercial power supplies only.
TK8A50D(STA4,Q,M) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- π-MOSVII
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK8A50D(STA4,Q,M) FAQ
1.How can I place an order for TK8A50D(STA4,Q,M) through Aetrix?
Please submit a Request for Quotation (RFQ) for TK8A50D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK8A50D(STA4,Q,M) reliable?
The price and inventory of TK8A50D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK8A50D(STA4,Q,M) is usually 5 days.
3.What payment methods are accepted for TK8A50D(STA4,Q,M)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK8A50D(STA4,Q,M) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK8A50D(STA4,Q,M)?
TK8A50D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK8A50D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK8A50D(STA4,Q,M)?
For technical support, including TK8A50D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK8A50D(STA4,Q,M) requirements.
6.How does Aetrix verify that TK8A50D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?
All TK8A50D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK8A50D(STA4,Q,M) meets industry standards.
7.What is the process for return or replacement of TK8A50D(STA4,Q,M)?
All TK8A50D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK8A50D(STA4,Q,M), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK8A50D(STA4,Q,M) part is unused and in its original packaging.
Return procedure for TK8A50D(STA4,Q,M):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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