Toshiba Semiconductor and Storage TK8A60W5,S5VX

Overview

TK8A60W5 from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline power supplies and motor control circuits. It delivers 600 V V_DSS, 8.0 A continuous drain current, and low R_DS(ON) of 0.44 Ω (typ.) at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial motor drivers.

For engineers reviewing the TK8A60W5 datasheet, TK8A60W5 pinout, TK8A60W5 application, or TK8A60W5 equivalent, this device is evaluated for high-efficiency flyback converters, half-bridge inverters, and DC brush motor drives where fast reverse recovery (t_rr = 80 ns typ.), avalanche ruggedness (E_AS = 105 mJ), and gate drive simplicity are critical selection criteria.

Technical Context

The TK8A60W5 employs Toshiba's DTMOS™ IV super-junction structure to achieve low conduction loss while maintaining robust switching performance. Its enhancement-mode gate threshold (V_th = 3–4.5 V) ensures compatibility with standard 5 V and 3.3 V logic-level controllers, and its integrated body diode features fast reverse recovery (t_rr = 80 ns typ.) and low Q_rr (0.35 µC typ.) for reduced switching loss in hard-switched topologies.

Thermal design is supported by a channel-to-case thermal resistance of 4.17 °C/W and a maximum channel temperature rating of 150 °C. The device is rated for single-pulse avalanche energy of 105 mJ under defined test conditions (V_DD = 90 V, L = 46.0 mH, I_AR = 2.0 A), confirming ruggedness in inductive load switching.

Key Specifications

Pinout & Package

TK8A60W5 is housed in a TO-220SIS (JEITA SC-67) package with internal source-isolation - enabling direct mounting to heatsinks without insulating washers. The package weighs 1.7 g and features a 0.6 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP8NK60ZFP and IPP60R099C7, the TK8A60W5 uniquely combines source-isolated packaging, guaranteed avalanche energy, and optimized t_rr/Q_rr for rugged, thermally simplified designs in motor and industrial power stages - without requiring layout-level trade-offs.

Availability

TK8A60W5 is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK8A60W5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

The TK8A60W5 belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered for high-efficiency, high-voltage switching in industrial and consumer power conversion systems where thermal robustness and avalanche capability are essential.

FAQ

What is the maximum continuous drain current rating for TK8A60W5?

The TK8A60W5 has a maximum continuous drain current (I_D) of 8.0 A at T_c = 25 °C. This rating assumes proper heatsinking - derating is required above 25 °C case temperature, with thermal resistance R_th(ch-c) = 4.17 °C/W limiting usable current in real-world layouts. Always verify channel temperature remains ≤150 °C using actual board-level thermal measurements.

Does TK8A60W5 have an isolated source terminal, and why does it matter?

Yes, the TK8A60W5 uses a TO-220SIS package with electrically isolated source - meaning the metal tab (drain) is insulated from the source lead. This allows direct mounting to a common heatsink without insulating hardware, simplifying thermal design and reducing parasitic inductance in high-frequency switching. It is especially valuable in half-bridge and high-side configurations where source potential floats.

Is TK8A60W5 suitable for avalanche-prone circuits like relay drivers or solenoid controls?

Yes, the TK8A60W5 is explicitly rated for single-pulse avalanche energy (E_AS) of 105 mJ under defined test conditions (V_DD = 90 V, L = 46.0 mH, I_AR = 2.0 A). This makes it suitable for inductive load switching in relay drivers and solenoid controls - provided energy per switching event stays within the guaranteed limit and repetitive avalanche is avoided.

What is the typical gate threshold voltage range for TK8A60W5, and how does it affect drive circuitry?

The TK8A60W5 has a gate threshold voltage (V_th) range of 3.0–4.5 V (measured at V_DS = 10 V, I_D = 0.4 mA). This enhancement-mode behavior ensures reliable turn-off at 0 V and clean turn-on with standard 5 V logic or microcontroller outputs. No level-shifting is needed for 5 V gate drivers, though 10 V drive is recommended for lowest R_DS(ON).

How does the body diode performance of TK8A60W5 compare to standard MOSFETs in synchronous rectification?

The TK8A60W5 features a fast-recovery body diode with t_rr = 80 ns (typ.) and Q_rr = 0.35 µC (typ.), significantly better than conventional planar MOSFETs. While not optimized for synchronous rectification like dedicated SR controllers, this performance reduces voltage spikes and switching loss in quasi-resonant and LLC secondary-side freewheeling paths - particularly in low-duty-cycle, high-V_DS scenarios.