Toshiba Semiconductor and Storage TK8A65D(STA4,Q,M)

Overview

TK8A65D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It delivers 650 V drain-source breakdown voltage, 8 A continuous drain current, 0.7 Ω typical R_DS(ON), and 4.5 S typical forward transfer admittance - enabling efficient high-frequency DC-DC conversion in industrial SMPS.

For engineers reviewing the TK8A65D(STA4,Q,M) datasheet, TK8A65D(STA4,Q,M) pinout, TK8A65D(STA4,Q,M) application, or TK8A65D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (416 mJ single-pulse), thermal resistance (2.78 °C/W channel-to-case), gate threshold range (2.0–4.0 V), and integrated body diode performance (1300 ns reverse recovery time).

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage hard-switching operation. Its enhancement-mode gate enables direct microcontroller drive with logic-level compatibility, while the 650 V V_DSS rating supports universal-input offline converters up to 380 V DC bus.

The device features low Crss (6 pF) and Qgd (9 nC), supporting fast switching with reduced Miller-induced turn-off delay. Its 1350 pF Ciss and 135 pF Coss at 25 V support stable gate drive design and predictable EMI behavior in flyback and LLC resonant topologies.

Key Specifications

Pinout & Package

TK8A65D(STA4,Q,M) is housed in the SC-67 package (Toshiba designation: 2-10U1B), a through-hole TO-220AB variant with isolated tab, rated for 150°C channel temperature and 1.7 g mass. The package provides mechanical robustness and thermal path optimization via copper leadframe and epoxy-molded construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching transistor applications.

Compared with STP8NK60ZFP and IPP65R099C7, TK8A65D(STA4,Q,M) offers balanced conduction/switching loss trade-offs at 650 V, proven avalanche ruggedness for unclamped inductive loads, and mature reliability data for long-lifecycle industrial deployments - making it optimal for cost-sensitive, thermally constrained 50–150 W SMPS.

Availability

TK8A65D(STA4,Q,M) is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and motor drive brake choppers requiring stable component supply and long-term lifecycle assurance.

Supply support for TK8A65D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with over 50 years of power MOSFET development heritage.

The π-MOSⅦ series, including TK8A65D(STA4,Q,M), was engineered for high-reliability offline switching power supplies targeting industrial, medical, and lighting applications demanding robust avalanche capability and stable parametric performance across temperature.

FAQ

What is the maximum continuous drain current for TK8A65D(STA4,Q,M) at 25°C case temperature?

The TK8A65D(STA4,Q,M) supports 8 A continuous drain current (I_D) at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature ≤150°C and accounts for thermal resistance R_th(ch-c) = 2.78 °C/W. At elevated case temperatures, derating is required per the PD–Tc curve in the datasheet.

Does TK8A65D(STA4,Q,M) have an integrated body diode, and what are its key parameters?

Yes, TK8A65D(STA4,Q,M) includes a monolithic body diode with forward voltage V_DSF = −1.7 V at I_DR = 8 A and reverse recovery time t_rr = 1300 ns. Its Q_rr is 12 μC under standard test conditions (dI_DR/dt = 100 A/μs), making it suitable for DCM flyback and active clamp topologies where diode conduction occurs during switching transitions.

What gate drive voltage is required to fully enhance TK8A65D(STA4,Q,M)?

TK8A65D(STA4,Q,M) is an enhancement-mode MOSFET with V_th = 2.0–4.0 V, but full enhancement (to achieve rated R_DS(ON) ≤ 0.84 Ω) requires V_GS ≥ 10 V. Driving at 10 V ensures low on-resistance and stable operation across temperature; operation at 5 V yields significantly higher R_DS(ON) and is not recommended for continuous conduction.

Is TK8A65D(STA4,Q,M) suitable for avalanche operation, and what is its single-pulse rating?

Yes, TK8A65D(STA4,Q,M) is explicitly rated for single-pulse avalanche operation with E_AS = 416 mJ under defined test conditions (V_DD = 90 V, L = 11.5 mH, I_AR = 8 A). This rating validates its use in unclamped inductive switching applications such as flyback transformers with significant leakage inductance, provided energy per event remains within this limit.

What is the package type and mounting configuration for TK8A65D(STA4,Q,M)?

TK8A65D(STA4,Q,M) uses the SC-67 package (JEITA designation), equivalent to TO-220AB with isolated tab. Pins 1–3 correspond to Gate–Drain–Source, and the metal tab is electrically connected to the Drain terminal. Mounting requires insulating hardware if the heatsink is grounded, and thermal interface material must be applied between tab and heatsink for optimal R_th(ch-c) performance.