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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK8P60W5,RVQ

Name: TK8P60W5,RVQ
Brand: Toshiba Semiconductor and Storage
SKU: TK8P60W5,RVQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK8P60W5,RVQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK8P60W5,RVQ.pdf

Description:: MOSFET N-CH 600V 8A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TK8P60W5 from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel MOSFET using DTMOS™ Super Junction structure, rated for 600 V drain-source voltage and 8.0 A DC drain current in DPAK package. It delivers low R_DS(ON) of 0.44 Ω (typ.) at V_GS = 10 V and fast reverse recovery time of 80 ns (typ.), enabling high-efficiency switching in offline SMPS and motor drive half-bridges.

For engineers reviewing the TK8P60W5 datasheet, TK8P60W5 pinout, TK8P60W5 application, or TK8P60W5 equivalent, this device is selected for high-voltage, medium-current power conversion where thermal performance, avalanche ruggedness (E_AS = 105 mJ), and gate controllability (V_th = 3–4.5 V) are critical design factors.

Technical Context

The TK8P60W5 employs Toshiba's DTMOS™ IV Super Junction architecture to achieve reduced specific on-resistance and improved switching efficiency. Its internal structure supports unclamped inductive switching with guaranteed single-pulse avalanche energy of 105 mJ under defined test conditions (V_DD = 90 V, I_AR = 2.0 A).

Designed for hard-switched topologies, it features low Crss (1.7 pF typ.) and Co(er) (33 pF typ.) at V_DS = 300 V, enabling stable dv/dt ruggedness ≥50 V/ns and reduced Miller-induced turn-on risk in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input AC/DC converters up to 400 V DC bus with margin
R_DS(ON)	0.44 Ω (typ.) at V_GS = 10 V - reduces conduction loss in 8 A continuous operation
I_D (DC)	8.0 A - enables use in 100–200 W power stages without forced cooling
t_rr	80 ns (typ.) - minimizes body diode commutation loss in synchronous rectification
E_AS	105 mJ - withstands unclamped inductive energy in motor drive and PFC applications
R_th(ch-c)	1.57 °C/W - allows 80 W power dissipation with ≤125 °C case temperature rise
Q_g	22 nC - determines gate driver current requirement (~1.1 A peak for 20 ns rise)

Pinout & Package

DPAK (TOSHIBA 2-7K1S) surface-mount package with exposed drain pad for thermal conduction to PCB copper. Standard three-terminal configuration optimized for high-current, high-voltage switching.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring 3–4.5 V threshold; low input capacitance (C_iss = 590 pF) eases driving
2	Drain (Heat Sink)	Main high-side current path and primary thermal interface; electrically connected to exposed metal tab
3	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch layout

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Enables 600 V rating with 0.44 Ω R_DS(ON), improving power density vs. planar MOSFETs
Enhancement-mode Gate	V_th = 3–4.5 V ensures reliable turn-off at 0 V gate bias and compatibility with 5 V logic drivers
Fast Body Diode Recovery	t_rr = 80 ns (typ.) reduces switching loss and EMI in flyback and LLC resonant converters
Avalanche-Rated Operation	Guaranteed 105 mJ single-pulse E_AS supports robustness in inductive load switching without snubbers
Low Crss / High dv/dt Immunity	Crss = 1.7 pF (typ.) and dv/dt ≥50 V/ns prevent false turn-on during high dV/dt transients

Applications

AC/DC Switching Power Supplies	Brushless DC Motor Drivers
Use Scenario: Primary-side switch in 100–200 W offline flyback or forward converters with universal AC input (85–265 V_AC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via PWM duty cycle; operates at 65–130 kHz. Use Value: Low R_DS(ON) and fast t_rr reduce conduction and recovery losses, improving efficiency by ~1.2% over legacy 600 V MOSFETs.	Use Scenario: Upper-leg switch in 3-phase inverter driving BLDC motors in HVAC blowers or power tools (≤200 W). IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology; commutates inductive motor current with controlled dead-time. Use Value: Avalanche ruggedness (E_AS = 105 mJ) tolerates inductive kickback during fault conditions without external clamping.
Industrial LED Drivers	Power Factor Correction (PFC)
Use Scenario: Switching element in isolated buck-boost or SEPIC LED drivers for street lighting (30–100 W). IC Role / Device Role / Timing Role: Primary switch regulating constant current to high-brightness LED strings; operates in CCM or CRM mode. Use Value: Low Q_gd/Q_g ratio (13/22 nC) improves controllability during light-load transitions and reduces gate drive loss.	Use Scenario: Boost switch in active PFC front-end for industrial power supplies (150–300 W). IC Role / Device Role / Timing Role: High-voltage switch shaping input current waveform to match sinusoidal AC line voltage. Use Value: R_DS(ON) = 0.44 Ω (typ.) limits conduction loss at 8 A peak, supporting >95% PFC efficiency at full load.

AC/DC Switching Power Supplies

Brushless DC Motor Drivers

Use Scenario: Primary-side switch in 100–200 W offline flyback or forward converters with universal AC input (85–265 V_AC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via PWM duty cycle; operates at 65–130 kHz.

Use Value: Low R_DS(ON) and fast t_rr reduce conduction and recovery losses, improving efficiency by ~1.2% over legacy 600 V MOSFETs.

Use Scenario: Upper-leg switch in 3-phase inverter driving BLDC motors in HVAC blowers or power tools (≤200 W).

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology; commutates inductive motor current with controlled dead-time.

Use Value: Avalanche ruggedness (E_AS = 105 mJ) tolerates inductive kickback during fault conditions without external clamping.

Industrial LED Drivers

Power Factor Correction (PFC)

Use Scenario: Switching element in isolated buck-boost or SEPIC LED drivers for street lighting (30–100 W).

IC Role / Device Role / Timing Role: Primary switch regulating constant current to high-brightness LED strings; operates in CCM or CRM mode.

Use Value: Low Q_gd/Q_g ratio (13/22 nC) improves controllability during light-load transitions and reduces gate drive loss.

Use Scenario: Boost switch in active PFC front-end for industrial power supplies (150–300 W).

IC Role / Device Role / Timing Role: High-voltage switch shaping input current waveform to match sinusoidal AC line voltage.

Use Value: R_DS(ON) = 0.44 Ω (typ.) limits conduction loss at 8 A peak, supporting >95% PFC efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK60ZFP	R_DS(ON) = 0.53 Ω (typ.), t_rr = 120 ns, E_AS = 75 mJ - higher conduction loss and slower recovery	Less suitable for high-frequency CRM PFC or compact flyback designs due to higher losses	Acceptable for cost-sensitive 60–100 W flyback where thermal margin exists
IPP60R099C7	R_DS(ON) = 0.099 Ω (typ.), V_DSS = 600 V, but Q_g = 42 nC - lower R_DS(ON) but higher gate charge	Better for high-efficiency, high-current PFC but requires stronger gate driver and careful layout for EMI control	Preferred when system prioritizes conduction loss reduction over gate drive complexity

Compared with STP8NK60ZFP and IPP60R099C7, the TK8P60W5 offers balanced trade-offs: lower R_DS(ON) than ST's ZFP series and significantly lower Q_g than Infineon's C7, making it optimal for space-constrained, medium-power SMPS where gate drive simplicity and thermal management are co-priorities.

Availability

TK8P60W5 is available at Aetrix Electronics and suitable for AC/DC power supplies, BLDC motor drives, and industrial LED drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK8P60W5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power semiconductors.

The TK8P60W5 belongs to Toshiba's DTMOS™ IV Super Junction MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and consumer power conversion systems.

FAQ

What is the maximum continuous drain current rating for the TK8P60W5?

The TK8P60W5 has a DC drain current rating of 8.0 A at T_c = 25 °C. This value decreases with increasing case temperature per the derating curve in Figure 8.15; at T_c = 100 °C, the usable I_D drops to approximately 4.5 A. The TK8P60W5 must be mounted on adequate copper area to maintain thermal performance within specifications.

Does the TK8P60W5 include an integrated body diode, and what are its key recovery characteristics?

Yes, the TK8P60W5 integrates a fast-recovery body diode with reverse recovery time t_rr = 80 ns (typ.) and reverse recovery charge Q_rr = 0.35 µC (typ.) at I_DR = 4.0 A. These values are measured under standardized conditions (V_DD = 400 V, -dI_DR/dt = 100 A/µs) and directly impact commutation loss in flyback and resonant topologies. The TK8P60W5's diode performance is specified and tested per JEDEC standards.

What gate voltage range is required to fully enhance the TK8P60W5?

The TK8P60W5 is an enhancement-mode MOSFET with gate threshold voltage V_th = 3.0–4.5 V (measured at V_DS = 10 V, I_D = 0.4 mA). To ensure full enhancement and minimal R_DS(ON), a gate-source voltage of 10 V is recommended, delivering the specified 0.44 Ω (typ.) on-resistance. Driving below 5 V risks incomplete turn-on and excessive conduction loss in the TK8P60W5.

Is the TK8P60W5 avalanche-rated, and how is that capability validated?

Yes, the TK8P60W5 is fully rated for single-pulse avalanche energy E_AS = 105 mJ under defined test conditions (V_DD = 90 V, T_ch = 25 °C initial, L = 46.0 mH, R_G = 25 Ω, I_AR = 2.0 A). This rating is guaranteed per Toshiba's reliability testing and appears in the Absolute Maximum Ratings table. The TK8P60W5's avalanche capability supports robust operation in inductive switching without external protection in many motor and PFC applications.

What is the thermal resistance from channel to case (R_th(ch-c)) for the TK8P60W5, and how does it affect heatsinking?

The TK8P60W5 has a maximum channel-to-case thermal resistance R_th(ch-c) = 1.57 °C/W, measured with the drain tab soldered to a 1-inch² 2-oz copper pad. This value defines the minimum thermal path needed to dissipate 80 W (its P_D rating) with ≤125 °C temperature rise. For typical 8 A operation at 0.44 Ω, power dissipation is ~28 W, allowing use with modest PCB copper area-no external heatsink required if layout follows Toshiba's recommended footprint in the TK8P60W5 datasheet.

TK8P60W5,RVQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 560mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 400µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK8P60W5,RVQ FAQ

1.How can I place an order for TK8P60W5,RVQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK8P60W5,RVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK8P60W5,RVQ reliable?

The price and inventory of TK8P60W5,RVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK8P60W5,RVQ is usually 5 days.

3.What payment methods are accepted for TK8P60W5,RVQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK8P60W5,RVQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK8P60W5,RVQ?

TK8P60W5,RVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK8P60W5,RVQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK8P60W5,RVQ?

For technical support, including TK8P60W5,RVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK8P60W5,RVQ requirements.

6.How does Aetrix verify that TK8P60W5,RVQ is sourced from the original manufacturer or authorized distributors?

All TK8P60W5,RVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK8P60W5,RVQ meets industry standards.

7.What is the process for return or replacement of TK8P60W5,RVQ?

All TK8P60W5,RVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK8P60W5,RVQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK8P60W5,RVQ part is unused and in its original packaging.

Return procedure for TK8P60W5,RVQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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