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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK8P60W,RVQ

Name: TK8P60W,RVQ
Brand: Toshiba Semiconductor and Storage
SKU: TK8P60W,RVQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK8P60W,RVQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK8P60W,RVQ.pdf

Description:: MOSFET N CH 600V 8A DPAK

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Product details

Overview

TK8P60W,RVQ from Toshiba is a silicon N-channel power MOSFET using DTMOS™ Super Junction structure, designed for high-voltage switching in offline AC-DC converters and PFC stages. It delivers 600 V V_DSS, 8.0 A continuous drain current, and a typ. R_DS(ON) of 0.42 Ω at V_GS = 10 V, enabling efficient operation in compact 80–150 W industrial power supplies.

For engineers reviewing the TK8P60W,RVQ datasheet, TK8P60W,RVQ pinout, TK8P60W,RVQ application, or TK8P60W,RVQ equivalent, key selection criteria include its 600 V rating, DPAK thermal performance (R_th(ch-c) = 1.57 °C/W), avalanche ruggedness (E_AS = 105 mJ), and gate threshold compatibility with standard 3.3/5 V controllers.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process, optimizing vertical charge balance to reduce R_DS(ON) without sacrificing switching speed or dv/dt immunity. Its enhancement-mode operation (V_th = 2.7–3.7 V) ensures reliable turn-on with logic-level gate drivers.

The device integrates a fast-recovery body diode (t_rr = 230 ns, Q_rr = 1.9 µC) and exhibits robust MOSFET dv/dt ruggedness ≥50 V/ns - critical for hard-switched flyback and LLC resonant topologies where voltage transients are severe.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input offline SMPS designs up to 380 V DC bus with margin
R_DS(ON) (typ.)	0.42 Ω @ V_GS = 10 V - enables <1.7 W conduction loss at 8 A, reducing heatsink requirements
I_D (DC)	8.0 A @ T_c = 25 °C - suitable for continuous operation in 100 W-class power stages
E_AS	105 mJ - withstands single-pulse inductive energy in PFC and flyback snubberless designs
R_th(ch-c)	1.57 °C/W - allows 50 °C temperature rise at 80 W dissipation when mounted on 1-in² copper pad
Q_g (typ.)	18.5 nC - compatible with low-power gate drivers (e.g., UCC27531) without excessive drive loss
t_rr	230 ns - minimizes reverse recovery loss in quasi-resonant converters operating ≤100 kHz

Pinout & Package

TK8P60W,RVQ is housed in a surface-mount DPAK (TOSHIBA 2-7K1S) package with exposed drain tab for thermal conduction. The package weighs 0.36 g and features gull-wing leads optimized for automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	Receives gate drive signal; requires ESD-safe handling due to ±30 V V_GSS limit
2: Drain (Heat Sink)	High-side switch node	Electrically connected to backside metal; must be soldered to PCB copper pour for thermal management
3: Source	Power return path	Serves as reference for gate drive; carries full load current and influences layout ground impedance

Key Features

Feature	Design Value
DTMOS™ Super Junction structure	Enables 600 V rating with 0.42 Ω R_DS(ON), reducing conduction loss by ~35% vs. planar MOSFETs in same package
Enhancement-mode threshold	V_th = 2.7–3.7 V ensures clean turn-on with 3.3 V microcontrollers and avoids unintended conduction during startup
Integrated fast body diode	t_rr = 230 ns and Q_rr = 1.9 µC reduce switching loss and EMI in discontinuous conduction mode (DCM) flyback
Avalanche-rated design	Guaranteed 105 mJ single-pulse E_AS eliminates need for external clamping in many clamp-free topologies

Applications

AC-DC Adapter Power Supply	Industrial LED Driver
Use Scenario: 65 W universal-input adapter with active PFC and QR flyback secondary stage. IC Role / Device Role / Timing Role: Primary-side switching MOSFET in PFC boost stage and main power switch in flyback transformer primary. Use Value: 0.42 Ω R_DS(ON) and 105 mJ E_AS enable >90% efficiency at full load while maintaining reliability under line surges.	Use Scenario: Constant-current 40 W LED driver for street lighting with wide ambient temperature range (−40 to +85 °C). IC Role / Device Role / Timing Role: High-side switch in buck-derived constant-current regulator driving 12–24 V LED strings. Use Value: 150 °C max channel temperature and 1.57 °C/W R_th(ch-c) allow stable operation without forced air cooling in sealed enclosures.
Server PSU Auxiliary Supply	Industrial Motor Control Inverter
Use Scenario: 12 V/3 A auxiliary supply in 1U server PSU, derived from main 380 V DC bus via flyback converter. IC Role / Device Role / Timing Role: Primary-side switch operating at 65 kHz with synchronous rectification on secondary side. Use Value: Low Q_g (18.5 nC) and fast t_r/t_f (20/5.5 ns) minimize gate drive loss and improve light-load efficiency.	Use Scenario: Half-bridge high-side switch in 750 W BLDC motor inverter for HVAC fan control. IC Role / Device Role / Timing Role: Upper-leg MOSFET in three-phase inverter bridge, driven by isolated gate driver. Use Value: dv/dt ruggedness ≥50 V/ns prevents false turn-on during high dV/dt commutation events in noisy motor drive environments.

AC-DC Adapter Power Supply

Industrial LED Driver

Use Scenario: 65 W universal-input adapter with active PFC and QR flyback secondary stage.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in PFC boost stage and main power switch in flyback transformer primary.

Use Value: 0.42 Ω R_DS(ON) and 105 mJ E_AS enable >90% efficiency at full load while maintaining reliability under line surges.

Use Scenario: Constant-current 40 W LED driver for street lighting with wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role / Timing Role: High-side switch in buck-derived constant-current regulator driving 12–24 V LED strings.

Use Value: 150 °C max channel temperature and 1.57 °C/W R_th(ch-c) allow stable operation without forced air cooling in sealed enclosures.

Server PSU Auxiliary Supply

Industrial Motor Control Inverter

Use Scenario: 12 V/3 A auxiliary supply in 1U server PSU, derived from main 380 V DC bus via flyback converter.

IC Role / Device Role / Timing Role: Primary-side switch operating at 65 kHz with synchronous rectification on secondary side.

Use Value: Low Q_g (18.5 nC) and fast t_r/t_f (20/5.5 ns) minimize gate drive loss and improve light-load efficiency.

Use Scenario: Half-bridge high-side switch in 750 W BLDC motor inverter for HVAC fan control.

IC Role / Device Role / Timing Role: Upper-leg MOSFET in three-phase inverter bridge, driven by isolated gate driver.

Use Value: dv/dt ruggedness ≥50 V/ns prevents false turn-on during high dV/dt commutation events in noisy motor drive environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK60ZFP	600 V, 8 A, R_DS(ON) = 0.55 Ω (typ.), TO-220FP package, no guaranteed E_AS	Larger footprint, higher conduction loss, requires external snubber in PFC	Prefer TK8P60W,RVQ for space-constrained DPAK layouts and snubberless designs
IPP60R099C7	600 V, 12.5 A, R_DS(ON) = 0.099 Ω, TO-220, CoolMOS™ C7, higher cost	Lower R_DS(ON) but over-specified current; requires gate resistor tuning for EMI control	Choose TK8P60W,RVQ for cost-sensitive 8 A applications where 0.42 Ω meets thermal targets

Compared with STP8NK60ZFP and IPP60R099C7, TK8P60W,RVQ offers optimal balance of DPAK footprint, 0.42 Ω conduction resistance, and guaranteed 105 mJ avalanche energy - making it ideal for compact, high-reliability 60–100 W offline power stages without layout or bill-of-materials overhead.

Availability

TK8P60W,RVQ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial LED drivers, and server auxiliary power supplies requiring stable component supply across extended production lifecycles.

Supply support for TK8P60W,RVQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power MOSFET technology.

The TK8P60W,RVQ belongs to Toshiba's DTMOS™ IV high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and consumer offline power conversion systems.

FAQ

What is the maximum continuous drain current for TK8P60W,RVQ at case temperature of 100 °C?

The TK8P60W,RVQ supports 8.0 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating applies per the PD–T_c curve (Fig. 8.15); the practical continuous current drops to approximately 4.5 A to maintain T_ch ≤ 150 °C. Always verify thermal design using R_th(ch-c) = 1.57 °C/W and actual PCB copper area.

Does TK8P60W,RVQ have a fully rated avalanche capability, and what is the test condition?

Yes, TK8P60W,RVQ is fully specified for single-pulse avalanche energy: E_AS = 105 mJ (max), tested under V_DD = 90 V, T_ch = 25 °C (initial), L = 46.0 mH, R_G = 25 Ω, I_AR = 2.0 A (Note 2). This rating enables reliable operation in unclamped inductive switching without external protection.

What is the gate threshold voltage range for TK8P60W,RVQ, and how does it affect controller compatibility?

The TK8P60W,RVQ has a gate threshold voltage V_th of 2.7–3.7 V (V_DS = 10 V, I_D = 0.4 mA), confirming reliable enhancement-mode turn-on with 3.3 V and 5 V logic-level gate drivers. This ensures compatibility with common PWM controllers like UC384x and UCC28070 without level-shifting circuitry.

Can TK8P60W,RVQ be used in place of a TO-220 MOSFET in an existing design?

No - TK8P60W,RVQ uses a DPAK (2-7K1S) package, not TO-220. While electrical specs may overlap, the DPAK's smaller footprint, different thermal path (drain-tab soldering), and gull-wing leadform require PCB layout revision. Direct replacement is not possible without mechanical and thermal redesign.

What is the typical reverse recovery charge (Q_rr) of the body diode in TK8P60W,RVQ, and why does it matter?

The TK8P60W,RVQ body diode has a typical Q_rr of 1.9 µC (I_DR = 4.0 A, V_GS = 0 V, V_DD = 400 V). This low value reduces switching losses and voltage overshoot during diode commutation - especially critical in quasi-resonant flyback and LLC converters where body diode conduction occurs regularly.

TK8P60W,RVQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 400µA

Gate Charge (Qg) (Max) @ Vgs:: 18.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK8P60W,RVQ FAQ

1.How can I place an order for TK8P60W,RVQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK8P60W,RVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK8P60W,RVQ reliable?

The price and inventory of TK8P60W,RVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK8P60W,RVQ is usually 5 days.

3.What payment methods are accepted for TK8P60W,RVQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK8P60W,RVQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK8P60W,RVQ?

TK8P60W,RVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK8P60W,RVQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK8P60W,RVQ?

For technical support, including TK8P60W,RVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK8P60W,RVQ requirements.

6.How does Aetrix verify that TK8P60W,RVQ is sourced from the original manufacturer or authorized distributors?

All TK8P60W,RVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK8P60W,RVQ meets industry standards.

7.What is the process for return or replacement of TK8P60W,RVQ?

All TK8P60W,RVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK8P60W,RVQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK8P60W,RVQ part is unused and in its original packaging.

Return procedure for TK8P60W,RVQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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