Toshiba Semiconductor and Storage TK8R2E06PL,S1X

Overview

TK8R2E06PL,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET optimized for high-efficiency DC-DC converters and switching voltage regulators. It delivers R_DS(ON) = 6.1 mΩ (typ., V_GS = 10 V), Q_SW = 9.7 nC (typ.), Q_oss = 23 nC (typ.), and supports 60 V V_DSS, 50 A I_D (DC), in TO-220 package with heatsink-connected drain.

For engineers reviewing the TK8R2E06PL,S1X datasheet, TK8R2E06PL,S1X pinout, TK8R2E06PL,S1X application, or TK8R2E06PL,S1X equivalent, key selection criteria include low conduction loss at high current, fast switching with minimal gate charge, thermal performance under continuous 50 A load, and compatibility with 48 V bus systems in industrial motor drivers and POL converters.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and reduced output charge, enabling high-frequency operation in synchronous buck topologies. Its enhancement-mode threshold (V_th = 1.5–2.5 V) ensures reliable turn-on with standard 4.5 V–10 V gate drive, while the 60 V breakdown rating targets 48 V input rail applications.

The device integrates a robust body diode with t_rr = 36 ns (typ.) and Q_rr = 37 nC (typ.), supporting hard-switched and quasi-resonant converter designs. Thermal resistance R_th(ch-c) = 1.84 °C/W enables efficient heat transfer to external heatsinks when mounted per TO-220 mechanical specifications (0.6 N·m torque).

Key Specifications

Pinout & Package

TK8R2E06PL,S1X is housed in a TO-220 package (Toshiba designation: 2-10X1A), with the drain terminal electrically connected to the metal tab for direct heatsink mounting. The package weighs 1.96 g and requires 0.6 N·m mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP55NF06L and IRFZ44NPBF, TK8R2E06PL,S1X provides 42 % lower R_DS(ON) than STP55NF06L and 78 % lower than IRFZ44NPBF, directly reducing conduction loss and junction temperature rise-critical for compact, fanless 50 A industrial power supplies.

Availability

TK8R2E06PL,S1X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK8R2E06PL,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK8R2E06PL,S1X belongs to Toshiba's U-MOS-H series of high-performance N-channel MOSFETs, engineered specifically for high-current, high-frequency power conversion in industrial and computing infrastructure.

FAQ

What is the maximum continuous drain current for TK8R2E06PL,S1X at 100 °C case temperature?

The TK8R2E06PL,S1X supports 50 A DC at T_c = 25 °C. At T_c = 100 °C, derating per the Safe Operating Area curve (Fig. 8.15) reduces the maximum continuous current to approximately 32 A. This value assumes proper heatsinking and adherence to R_th(ch-c) = 1.84 °C/W. Always validate thermal design using actual board layout and ambient conditions before finalizing with TK8R2E06PL,S1X.

Does TK8R2E06PL,S1X have avalanche capability, and what is its rated single-pulse energy?

Yes, TK8R2E06PL,S1X is rated for single-pulse avalanche energy E_AS = 36 mJ (t = 100 µs, V_DD = 48 V, T_ch = 25 °C). This capability supports limited inductive switching stress during fault events but is not intended for repetitive avalanche operation. Designers must ensure that all operating conditions-including voltage overshoot and current slew rate-remain within the guaranteed SOA limits defined in Fig. 8.15 when using TK8R2E06PL,S1X in circuits with significant inductive loads.

Can TK8R2E06PL,S1X be driven directly by a 3.3 V microcontroller GPIO?

No-TK8R2E06PL,S1X has a minimum V_th of 1.5 V but requires ≥4.5 V gate drive for specified R_DS(ON) and switching performance. At 3.3 V, R_DS(ON) rises sharply (>25 mΩ), increasing conduction loss and heating. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is required to deliver 10 V to the gate of TK8R2E06PL,S1X for optimal efficiency and reliability.

What is the gate-source leakage current specification for TK8R2E06PL,S1X?

The gate leakage current I_GSS for TK8R2E06PL,S1X is ±0.1 µA maximum at V_GS = ±20 V and V_DS = 0 V (Ta = 25 °C). This ultra-low leakage ensures minimal static power draw in gate-drive networks and supports stable biasing in high-impedance gate circuits. The value is confirmed in Section 6.1 of the official TK8R2E06PL,S1X datasheet Rev. 3.0.A.

Is TK8R2E06PL,S1X RoHS compliant and lead-free?

Yes, TK8R2E06PL,S1X is RoHS compliant and lead-free, meeting EU Directive 2011/65/EU requirements. Toshiba confirms this status in its environmental compliance documentation and product marking. The device uses matte tin plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1. Full RoHS test reports and substance declarations are available upon request for TK8R2E06PL,S1X.