Toshiba Semiconductor and Storage TK9A90E,S4X
- Part No.:
- TK9A90E,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK9A90E,S4X.pdf
- Description:
- MOSFET N-CH 900V 9A TO220SIS
- Quantity:
- Payment:

- Shipping:

Inventory:24
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Product details
Overview
TK9A90E,S4X from Toshiba is a silicon N-channel power MOSFET designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 9 A DC drain current, 900 V drain-source breakdown voltage, and 1.0 Ω typical RDS(ON) at VGS = 10 V, enabling efficient operation in flyback and forward topologies up to 720 V DC bus.
For engineers reviewing the TK9A90E,S4X datasheet, TK9A90E,S4X pinout, TK9A90E,S4X application, or TK9A90E,S4X equivalent, key selection criteria include its TO-220SIS package thermal performance (Rth(ch-c) = 2.5 °C/W), avalanche ruggedness (EAS = 454 mJ), and gate threshold compatibility with standard 10 V drive circuits.
Technical Context
The TK9A90E,S4X employs enhancement-mode π-MOS™ architecture optimized for high-voltage hard-switching applications. Its 900 V VDSS rating supports universal-input offline designs, while low gate charge (Qg = 46 nC typ.) enables fast turn-on/turn-off with minimal driver loss.
It integrates an intrinsic body diode with 1200 ns reverse recovery time and 12 µC Qrr, suitable for discontinuous conduction mode (DCM) flyback converters. The device operates up to 150 °C channel temperature and features ±30 V gate-source voltage tolerance for robust gate drive margin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 900 V - Supports 720 V DC bus in universal-input AC-DC supplies without derating |
| RDS(ON) | 1.0 Ω (typ.) at VGS = 10 V - Enables <1 W conduction loss at 9 A ID |
| ID (DC) | 9 A - Sufficient for 100–150 W SMPS output power with proper heatsinking |
| EAS | 454 mJ - Withstands single-pulse avalanche energy during overvoltage transients |
| Qg | 46 nC (typ.) - Reduces gate drive power and allows use with low-current drivers |
| Rth(ch-c) | 2.5 °C/W - Enables direct mounting to heatsink for thermal management in compact designs |
| Vth | 2.5–4.0 V - Ensures reliable turn-on with standard logic-level or 10 V gate drivers |
Pinout & Package
TK9A90E,S4X is housed in a TO-220SIS (JEITA SC-67) package with isolated tab, providing creepage/clearance compliance for high-voltage isolation requirements. The package weighs 1.7 g and features a thermally enhanced copper leadframe for low Rth(ch-c).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ≤±30 V drive; sensitive to ESD - must be protected with series resistor and clamping |
| 2 | Drain | High-voltage output node connected to primary-side transformer winding or bulk capacitor; electrically isolated from tab |
| 3 | Source | Reference node for gate drive; tied to primary ground; forms return path for 9 A DC current |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 1.0 Ω typ. reduces conduction losses in high-duty-cycle SMPS stages |
| Avalanche-rated | Guaranteed 454 mJ single-pulse energy withstand eliminates need for external snubbers in many flyback designs |
| Enhancement-mode Vth | 2.5–4.0 V ensures clean turn-on without spurious conduction during startup or noise events |
| Isolated TO-220SIS package | Electrically insulated drain tab enables direct heatsink mounting without insulating pads in Class I safety designs |
Applications
| AC-DC Flyback Converter | Industrial SMPS Primary Switch |
|---|---|
Use Scenario: 100–150 W offline adapter with universal AC input (85–265 VAC) and DCM operation. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary via transformer. Use Value: 900 V VDSS and 454 mJ EAS eliminate need for clamping circuits under line surge conditions. | Use Scenario: 200 W industrial power supply operating in continuous conduction mode (CCM) with active PFC front-end. IC Role / Device Role / Timing Role: High-side main switch in forward or half-bridge topology handling 720 V DC link voltage. Use Value: 2.5 °C/W Rth(ch-c) enables stable 9 A operation with passive heatsinking at 60 °C ambient. |
| LED Driver Power Stage | Motor Drive Protection Switch |
Use Scenario: Constant-current LED driver for street lighting with 300–600 V DC bus derived from rectified AC. IC Role / Device Role / Timing Role: Primary-side switching element regulating current through high-power LED strings. Use Value: Low 1.0 Ω RDS(ON) minimizes thermal rise in enclosed outdoor housings with limited airflow. | Use Scenario: Overcurrent protection switch in 3-phase inverter pre-charge or braking circuit for HVAC compressors. IC Role / Device Role / Timing Role: High-voltage isolation switch enabling safe discharge of DC link capacitors before startup. Use Value: 900 V rating and 9 A pulsed capability support safe interruption of 700 V bus under fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK90ZFP | 900 V, 8.5 A, RDS(ON) = 1.2 Ω, TO-220FP package (non-isolated tab) | Requires insulating pad for heatsink mounting; lower avalanche energy (320 mJ) | Choose when cost sensitivity outweighs isolation requirement and thermal margin permits higher RDS(ON) |
| IXTP90N10P | 1000 V, 90 A, RDS(ON) = 0.1 Ω, TO-220 package (non-isolated) | Higher current rating but larger die size increases gate charge (Qg = 120 nC); no avalanche rating specified | Choose only for ultra-low-loss 1000 V systems where gate drive strength and layout space allow |
Compared with STP9NK90ZFP and IXTP90N10P, the TK9A90E,S4X offers superior thermal interface via isolated TO-220SIS packaging and guaranteed avalanche ruggedness-critical for reliability in unregulated industrial mains environments-while maintaining competitive RDS(ON) and gate drive efficiency.
Availability
TK9A90E,S4X is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial switch-mode power supplies, and high-voltage LED drivers requiring stable component supply across extended production lifecycles.
Supply support for TK9A90E,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with global distribution and automotive-grade quality systems.
The TK9A90E,S4X belongs to Toshiba's π-MOS™ high-voltage power MOSFET family, engineered specifically for rugged, high-efficiency switching in offline power conversion systems up to 900 V.
FAQ
What is the maximum continuous drain current rating for TK9A90E,S4X?
The TK9A90E,S4X has a DC drain current rating of 9 A at Tc = 25 °C. This value assumes adequate heatsinking to maintain channel temperature ≤150 °C. At elevated case temperatures, derating applies per the Rth(ch-c) = 2.5 °C/W specification. For pulsed operation, IDP = 27 A is permitted with appropriate duty cycle limits.
Does TK9A90E,S4X have an isolated package, and why does it matter?
Yes, TK9A90E,S4X uses the TO-220SIS package with electrically isolated drain tab. This isolation eliminates the need for insulating pads or sleeves when mounting directly to a grounded heatsink-reducing thermal resistance and assembly cost while improving safety compliance in Class I AC-DC power supplies.
What is the gate threshold voltage range for TK9A90E,S4X, and how does it affect drive design?
The TK9A90E,S4X has a gate threshold voltage (Vth) of 2.5–4.0 V at VDS = 10 V and ID = 0.9 mA. This range ensures full enhancement with standard 10 V gate drivers while preventing accidental turn-on from noise or leakage currents, supporting robust operation in noisy industrial environments.
Can TK9A90E,S4X be used in avalanche mode, and what is its rated energy?
Yes, TK9A90E,S4X is fully rated for single-pulse avalanche operation with EAS = 454 mJ at Tch = 25 °C. This specification is guaranteed per datasheet and enables reliable operation during transient overvoltage events-such as inductive kickback or line surges-without external snubber components in many flyback designs.
What is the typical total gate charge of TK9A90E,S4X, and how does it impact switching loss?
The TK9A90E,S4X has a typical total gate charge (Qg) of 46 nC at VDD ≈ 400 V, VGS = 10 V, and ID = 9 A. This moderate Qg balances fast switching transitions against gate driver power consumption, enabling efficient operation at 65–135 kHz in high-voltage SMPS without excessive driver heating or complexity.
TK9A90E,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- π-MOSVIII
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.3Ohm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK9A90E,S4X FAQ
1.How can I place an order for TK9A90E,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK9A90E,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK9A90E,S4X reliable?
The price and inventory of TK9A90E,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK9A90E,S4X is usually 5 days.
3.What payment methods are accepted for TK9A90E,S4X?
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4.How is shipping managed for TK9A90E,S4X?
TK9A90E,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK9A90E,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK9A90E,S4X?
For technical support, including TK9A90E,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK9A90E,S4X requirements.
6.How does Aetrix verify that TK9A90E,S4X is sourced from the original manufacturer or authorized distributors?
All TK9A90E,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK9A90E,S4X meets industry standards.
7.What is the process for return or replacement of TK9A90E,S4X?
All TK9A90E,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK9A90E,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK9A90E,S4X part is unused and in its original packaging.
Return procedure for TK9A90E,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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