Toshiba Semiconductor and Storage TK9R6E15Q5,S1X

Overview

TK9R6E15Q5,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET designed for high-frequency switching in primary-side power stages. It delivers R_DS(ON) = 7.9 mΩ (typ.) at V_GS = 10 V, t_rr = 40 ns (typ.), Q_rr = 32 nC (typ.), and supports 150 V V_DSS, enabling efficient operation in DC-DC converters up to 52 A continuous drain current.

For engineers reviewing the TK9R6E15Q5,S1X datasheet, TK9R6E15Q5,S1X pinout, TK9R6E15Q5,S1X application, or TK9R6E15Q5,S1X equivalent, key selection criteria include its fast body diode recovery, low gate charge (Q_SW = 17 nC), thermal resistance (R_th(ch-c) = 0.73 °C/W), TO-220 package with heatsink-connected drain, and suitability for hard-switched 150 V industrial power supplies.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to minimize conduction and switching losses simultaneously. Its optimized cell layout achieves low R_DS(ON) while maintaining robust avalanche capability (E_AS = 55 mJ) and controlled Q_gd/Q_gs ratio for stable dV/dt immunity in high-side configurations.

The device operates in enhancement mode with V_th = 3.1–4.5 V and integrates a fast-recovery intrinsic body diode-critical for synchronous rectification and freewheeling in buck, half-bridge, and motor drive topologies where reverse recovery charge directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

TO-220 package (TOSHIBA designation: 2-10X1A), 3-pin through-hole, drain-connected tab for direct heatsinking. Weight: 1.96 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP10NK150ZFP and IXTH16N15X2, TK9R6E15Q5,S1X offers superior switching efficiency in compact 150 V systems due to its 7.9 mΩ R_DS(ON), 40 ns t_rr, and TO-220 thermal performance-making it optimal for space-constrained, high-frequency power stages where loss budget is tight.

Availability

TK9R6E15Q5,S1X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply and production-ready lead times.

Supply support for TK9R6E15Q5,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK9R6E15Q5,S1X belongs to Toshiba's U-MOS-H series of high-voltage N-channel MOSFETs, engineered specifically for high-frequency, high-efficiency power conversion in industrial, telecom, and motor control applications.

FAQ

What is the maximum continuous drain current rating for TK9R6E15Q5,S1X?

The TK9R6E15Q5,S1X is rated for 52 A continuous drain current (I_D) at case temperature T_c = 25 °C. This rating decreases with rising case temperature per the Safe Operating Area (SOA) curve-derating to approximately 30 A at T_c = 100 °C. The device also supports 250 A pulsed drain current (I_DP) for t ≤ 100 µs, enabling robust handling of short-duration overload conditions.

Does TK9R6E15Q5,S1X have a built-in body diode, and what are its recovery characteristics?

Yes, TK9R6E15Q5,S1X integrates a fast-recovery intrinsic body diode with reverse recovery time t_rr = 40 ns (typ.) and reverse recovery charge Q_rr = 32 nC (typ.) at I_DR = 13 A and −dI_DR/dt = 100 A/µs. These values are measured under standardized conditions and enable reduced switching loss and EMI in synchronous rectification and freewheeling applications compared to standard MOSFETs.

What is the gate threshold voltage range for TK9R6E15Q5,S1X, and how does it affect drive compatibility?

The gate threshold voltage V_th of TK9R6E15Q5,S1X is specified as 3.1–4.5 V (V_DS = 10 V, I_D = 1.1 mA), making it compatible with both 3.3 V and 5 V logic-level gate drivers. This range ensures reliable turn-on while providing sufficient noise margin to prevent spurious conduction in electrically noisy industrial environments.

Is TK9R6E15Q5,S1X suitable for avalanche-prone circuits like motor drives or inductive switching?

Yes, TK9R6E15Q5,S1X is rated for 55 mJ single-pulse avalanche energy (E_AS) at T_c = 25 °C, confirming its ability to absorb inductive energy safely during switching transitions. This specification is validated per JEDEC standards and supports reliable operation in motor driver half-bridges and relay/snubber-free inductive load switching without external clamping.

What thermal resistance values apply to TK9R6E15Q5,S1X, and how do they impact heatsink design?

TK9R6E15Q5,S1X has a channel-to-case thermal resistance R_th(ch-c) of 0.73 °C/W (max), meaning a 100 W power dissipation results in a 73 °C temperature rise from case to channel. Its channel-to-ambient R_th(ch-a) is 83.3 °C/W (max), underscoring the necessity of mechanical heatsinking via the drain-connected tab. Effective thermal design requires mounting the TO-220 tab to a heatsink with thermal interface material and torque-controlled screws (0.6 N·m max).