Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK9R7A15Q5,S4X

Name: TK9R7A15Q5,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK9R7A15Q5,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TK9R7A15Q5,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK9R7A15Q5,S4X.pdf

Description:: 150V UMOS10-HSD TO-220SIS 9.7MOH

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:388

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TK9R7A15Q5,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET optimized for high-frequency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 8 mΩ (typ., V_GS = 10 V), fast reverse recovery time t_rr = 40 ns (typ.), and low gate charge Q_SW = 17 nC (typ.), enabling high-efficiency operation at 150 V drain-source rating.

For engineers reviewing the TK9R7A15Q5,S4X datasheet, TK9R7A15Q5,S4X pinout, TK9R7A15Q5,S4X application, or TK9R7A15Q5,S4X equivalent, key selection criteria include its TO-220SIS package with isolated source, 49 A continuous drain current capability, and verified performance in synchronous rectification and hard-switched buck topologies under thermal constraints.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low conduction loss and controlled body diode recovery behavior. Its enhancement-mode threshold voltage (V_th = 3.1–4.5 V) ensures reliable turn-on with standard 10 V gate drive, while the isolated source configuration in TO-220SIS supports floating-source applications like high-side switching.

The device features tightly specified dynamic parameters: C_iss = 3690 pF (typ.), C_rss = 23 pF (typ.), and Q_g = 50 nC (typ.) at V_DD ≈ 75 V, enabling predictable gate-drive design and reduced switching losses in high-frequency SMPS designs up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage for use in 12 V–48 V input systems with 2× safety margin against transients.
R_DS(ON)	8 mΩ (typ., V_GS = 10 V) - Enables <1 W conduction loss at 24.5 A, critical for thermally constrained PCB layouts.
t_rr	40 ns (typ.) - Minimizes body diode reverse recovery energy loss during synchronous rectification or freewheeling.
Q_SW	17 nC (typ.) - Low gate-switch charge reduces required gate-driver peak current and driver IC power dissipation.
I_D (DC)	49 A (T_c = 25 °C) - Supports high-current output stages without parallel devices in properly heatsinked TO-220SIS mounting.
R_th(ch-c)	3.33 °C/W - Enables direct thermal path to heatsink; allows ~13.5 W continuous dissipation before reaching T_ch = 175 °C.
Q_rr	32 nC (typ.) - Quantifies stored charge in body diode; directly impacts EMI and switching loss during commutation.

Pinout & Package

TK9R7A15Q5,S4X is housed in a TO-220SIS package (Toshiba designation: 2-10U1S), featuring electrically isolated source terminal for high-side or half-bridge configurations. The package provides mechanical robustness, standardized mounting, and 2000 V_RMS isolation between drain and source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±20 V drive; sensitive to ESD-must be handled with grounding precautions.
2	Drain	Main high-voltage power terminal; connected to heat slug; electrically isolated from source in TO-220SIS variant.
3	Source	Return path for load current; isolated from drain and case-enables floating-source gate drive in high-side switch.

Key Features

Feature	Design Value
U-MOS-H trench structure	Reduces R_DS(ON) × area product by >25% vs. planar MOSFETs, improving power density in compact converters.
Fast body diode recovery	t_rr = 40 ns and Q_rr = 32 nC enable stable operation in synchronous rectification without external Schottky clamping.
Isolated source package	TO-220SIS allows direct mounting on heatsinks without insulating pads-reducing thermal resistance and assembly cost.
Low gate charge profile	Q_g = 50 nC and Q_SW = 17 nC reduce gate-drive power and simplify driver selection for 300–500 kHz operation.

Applications

High-Efficiency DC-DC Converters	Switching Voltage Regulators
Use Scenario: Primary-side switch in 48 V–12 V buck converters for telecom and server power supplies operating at 300–500 kHz. IC Role / Device Role / Timing Role: Main power switch handling 24.5 A DC current with minimal conduction and switching loss. Use Value: 8 mΩ R_DS(ON) and 40 ns t_rr reduce total power loss by ≥15% versus legacy 12 mΩ MOSFETs at same frequency.	Use Scenario: High-current step-down regulator in industrial PLC I/O modules requiring stable 5 V/3.3 V rails from 24 V bus. IC Role / Device Role / Timing Role: Synchronous rectifier in dual-phase buck controller with forced PWM mode. Use Value: Low Q_rr (32 nC) prevents shoot-through risk and enables clean zero-voltage switching transitions.
Motor Drivers	Industrial Power Supplies
Use Scenario: Half-bridge leg in 24 V BLDC motor controllers for automated guided vehicles (AGVs) with 10–20 kHz PWM. IC Role / Device Role / Timing Role: High-side switch with isolated source enabling direct gate drive without bootstrap complexity. Use Value: TO-220SIS isolation eliminates need for level-shifting gate drivers-reducing BOM count and layout area.	Use Scenario: Output stage in programmable bench power supplies delivering 0–30 V / 0–10 A with <0.1% load regulation. IC Role / Device Role / Timing Role: Pass element in linear-regulator-assisted switching architecture for low-noise output. Use Value: 175 °C max channel temperature and 3.33 °C/W R_th(ch-c) support sustained 49 A operation with active cooling.

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Use Scenario: Primary-side switch in 48 V–12 V buck converters for telecom and server power supplies operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Main power switch handling 24.5 A DC current with minimal conduction and switching loss.

Use Value: 8 mΩ R_DS(ON) and 40 ns t_rr reduce total power loss by ≥15% versus legacy 12 mΩ MOSFETs at same frequency.

Use Scenario: High-current step-down regulator in industrial PLC I/O modules requiring stable 5 V/3.3 V rails from 24 V bus.

IC Role / Device Role / Timing Role: Synchronous rectifier in dual-phase buck controller with forced PWM mode.

Use Value: Low Q_rr (32 nC) prevents shoot-through risk and enables clean zero-voltage switching transitions.

Motor Drivers

Industrial Power Supplies

Use Scenario: Half-bridge leg in 24 V BLDC motor controllers for automated guided vehicles (AGVs) with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: High-side switch with isolated source enabling direct gate drive without bootstrap complexity.

Use Value: TO-220SIS isolation eliminates need for level-shifting gate drivers-reducing BOM count and layout area.

Use Scenario: Output stage in programmable bench power supplies delivering 0–30 V / 0–10 A with <0.1% load regulation.

IC Role / Device Role / Timing Role: Pass element in linear-regulator-assisted switching architecture for low-noise output.

Use Value: 175 °C max channel temperature and 3.33 °C/W R_th(ch-c) support sustained 49 A operation with active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48N150M5	R_DS(ON) = 12.5 mΩ (V_GS = 10 V); higher Q_rr = 110 nC; TO-247 package	Larger footprint and higher switching loss in high-frequency DC-DC; better suited for lower-frequency, higher-voltage motor drives	Choose when higher avalanche ruggedness (E_AS = 1100 mJ) is prioritized over efficiency at >200 kHz.
IXTH30N150L	R_DS(ON) = 10.5 mΩ; t_rr = 120 ns; no isolated source; TO-247AC	Requires gate-level shifting for high-side use; unsuitable for space-constrained TO-220SIS footprints	Select only if board redesign accommodates larger package and thermal interface changes are acceptable.

Compared with STP48N150M5 and IXTH30N150L, TK9R7A15Q5,S4X offers superior high-frequency efficiency due to lower R_DS(ON), faster t_rr, and integrated source isolation-making it optimal for compact, thermally limited, and high-switching-frequency applications where layout simplicity matters.

Availability

TK9R7A15Q5,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support through 2030.

Supply support for TK9R7A15Q5,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK9R7A15Q5,S4X belongs to Toshiba's U-MOS-H series of high-voltage N-channel MOSFETs, engineered specifically for high-frequency, high-efficiency power conversion in industrial and communications infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for TK9R7A15Q5,S4X?

The TK9R7A15Q5,S4X is rated for 49 A continuous drain current (I_D) at case temperature T_c = 25 °C. This rating assumes proper heatsinking and adherence to the guaranteed maximum safe operating area (SOA) curve. At elevated case temperatures, derating applies per the PD–T_c curve in the datasheet, with R_th(ch-c) = 3.33 °C/W defining thermal limits.

Does TK9R7A15Q5,S4X have an isolated source terminal?

Yes, TK9R7A15Q5,S4X uses the TO-220SIS package, which provides electrical isolation between the drain (heat slug) and source (pin 3). This isolation enables direct mounting to a common heatsink without insulating hardware and supports high-side switching configurations without level-shifting gate drivers.

What is the typical gate threshold voltage range for TK9R7A15Q5,S4X?

The TK9R7A15Q5,S4X has a gate threshold voltage (V_th) range of 3.1 V to 4.5 V, measured at V_DS = 10 V and I_D = 1.1 mA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity in noisy industrial environments.

How does the reverse recovery performance of TK9R7A15Q5,S4X compare to standard MOSFETs?

TK9R7A15Q5,S4X achieves t_rr = 40 ns (typ.) and Q_rr = 32 nC (typ.), significantly faster than conventional MOSFETs with similar voltage ratings. This is achieved via optimized body diode design in the U-MOS-H process, reducing switching loss and EMI in synchronous rectification and hard-switched topologies.

Is TK9R7A15Q5,S4X RoHS compliant?

Yes, TK9R7A15Q5,S4X is RoHS compliant per Directive 2011/65/EU. The marking includes [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], depending on the specific lot. Environmental compliance details-including lead-free status and halogen content-are confirmed per lot and documented in Toshiba's material declarations.

TK9R7A15Q5,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSX-H

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 9.7mOhm @ 24.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3690 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK9R7A15Q5,S4X FAQ

1.How can I place an order for TK9R7A15Q5,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK9R7A15Q5,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK9R7A15Q5,S4X reliable?

The price and inventory of TK9R7A15Q5,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK9R7A15Q5,S4X is usually 5 days.

3.What payment methods are accepted for TK9R7A15Q5,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK9R7A15Q5,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK9R7A15Q5,S4X?

TK9R7A15Q5,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK9R7A15Q5,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK9R7A15Q5,S4X?

For technical support, including TK9R7A15Q5,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK9R7A15Q5,S4X requirements.

6.How does Aetrix verify that TK9R7A15Q5,S4X is sourced from the original manufacturer or authorized distributors?

All TK9R7A15Q5,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK9R7A15Q5,S4X meets industry standards.

7.What is the process for return or replacement of TK9R7A15Q5,S4X?

All TK9R7A15Q5,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK9R7A15Q5,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK9R7A15Q5,S4X part is unused and in its original packaging.

Return procedure for TK9R7A15Q5,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…