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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TKR74F04PB,LXGQ

Name: TKR74F04PB,LXGQ
Brand: Toshiba Semiconductor and Storage
SKU: TKR74F04PB,LXGQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TKR74F04PB,LXGQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: TKR74F04PB,LXGQ.pdf

Description:: MOSFET N-CH 40V 250A TO220SM

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Product details

Overview

TKR74F04PB from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅣ-H process, designed for high-current switching in automotive and industrial power stages. It delivers R_DS(ON) = 0.6 mΩ (typ.) at V_GS = 10 V, supports continuous drain current up to 250 A (T_c = 25 °C), and features low gate charge (Q_g = 227 nC) for efficient high-frequency DC-DC conversion.

For engineers reviewing the TKR74F04PB datasheet, TKR74F04PB pinout, TKR74F04PB application, or TKR74F04PB equivalent, this device is selected for high-efficiency, high-reliability 40 V automotive power systems where low conduction loss, robust avalanche capability (E_AS = 731 mJ), and thermal stability (T_ch ≤ 175 °C) are critical design requirements.

Technical Context

This MOSFET employs Toshiba's U-MOSⅣ-H trench-gate structure to achieve ultra-low on-resistance while maintaining fast switching performance. Its enhancement-mode operation (V_th = 2.0–3.0 V) ensures reliable gate control with standard 10 V logic-level drive, and its integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies.

The TO-220SM(W) package provides direct heatsink mounting via the drain-connected tab, enabling low thermal resistance (R_th(ch-c) = 0.4 °C/W) and stable operation under high-power pulse conditions (I_DP = 750 A). Avalanche-rated design allows safe energy absorption during inductive switching transients without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 36 V automotive battery systems and 48 V mild-hybrid architectures.
R_DS(ON) (typ.)	0.6 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 125 A, reducing thermal load in high-current motor drivers and VRMs.
I_D (DC)	250 A at T_c = 25 °C - Supports high-output power delivery in compact, heatsink-mounted designs without forced air cooling.
E_AS	731 mJ - Single-pulse avalanche energy rating ensures robustness against inductive kickback in motor control and DC-DC converter flyback phases.
Q_g	227 nC - Total gate charge optimized for fast turn-on/turn-off with moderate gate driver strength (e.g., 1–2 A peak).
R_th(ch-c)	0.4 °C/W - Channel-to-case thermal resistance enables effective heat transfer to external heatsinks in TO-220SM(W) mounting configuration.
V_th	2.0–3.0 V - Gate threshold range guarantees clean turn-on with standard 3.3 V or 5 V microcontroller GPIOs when driven via level-shifting buffers.

Pinout & Package

Package: TO-220SM(W) (TOSHIBA designation: 2-10W1S), surface-mount variant with insulated backside and drain-connected metal tab for heatsink mounting. Weight: 1.07 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring low-impedance drive; sensitive to ESD-must be protected with gate resistor and clamping diodes.
2	Drain (Heatsink)	Main high-side current path and thermally conductive interface; electrically connected to heatsink-requires insulation if heatsink is grounded.
3	Source	Reference node for gate drive and current sensing; connects to low-side switch or ground return path in half-bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS stress testing per JESD22-A108 and A111.
Ultra-low R_DS(ON)	0.6 mΩ typ. minimizes I²R losses in high-current paths, directly improving efficiency in 40 V battery-powered traction inverters and starter generators.
High avalanche energy rating	731 mJ single-pulse capability eliminates need for external avalanche protection in motor phase-leg and buck converter applications.
Low gate charge	227 nC total gate charge reduces switching losses and eases gate driver selection-compatible with common 1–2 A peak drivers like TC4420 or UCC27531.
Enhancement-mode V_th	2.0–3.0 V threshold ensures predictable turn-on behavior with industry-standard logic-level gate drivers and avoids unintended conduction during power-up.

Applications

Automotive DC-DC Converters	Electric Power Steering (EPS) Motor Drivers
Use Scenario: High-efficiency 12 V → 48 V bidirectional DC-DC conversion in 48 V mild-hybrid vehicles. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET in interleaved buck-boost topology operating at 100–200 kHz. Use Value: Ultra-low R_DS(ON) reduces conduction loss by >40% vs. legacy 1.2 mΩ devices, enabling >96% peak efficiency at 10 kW output.	Use Scenario: Three-phase inverter driving brushless DC motor in column-assist EPS systems. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, handling 150 A peak phase current with PWM frequencies up to 20 kHz. Use Value: Robust avalanche rating and low Q_gd (54 nC) minimize shoot-through risk and improve fault tolerance during rapid torque transients.
Onboard Charger (OBC) Primary Switch	Industrial 40 V Switching Regulators
Use Scenario: AC/DC PFC + LLC resonant stage in 6.6 kW EV onboard chargers. IC Role / Device Role / Timing Role: High-current primary-side switch in LLC half-bridge, conducting 200+ A pulses at 150–300 kHz. Use Value: Optimized C_iss/C_rss ratio (14200 pF / 1300 pF) enables zero-voltage switching across wide load range, reducing EMI and gate drive loss.	Use Scenario: High-current step-down regulator for factory automation PLC I/O modules and servo amplifier power rails. IC Role / Device Role / Timing Role: Main power switch in synchronous buck converter delivering 200 A at 5–12 V from 40 V bus. Use Value: TO-220SM(W) package allows direct bolt-down heatsinking, eliminating thermal interface material and simplifying mechanical layout for high-volume production.

Automotive DC-DC Converters

Electric Power Steering (EPS) Motor Drivers

Use Scenario: High-efficiency 12 V → 48 V bidirectional DC-DC conversion in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET in interleaved buck-boost topology operating at 100–200 kHz.

Use Value: Ultra-low R_DS(ON) reduces conduction loss by >40% vs. legacy 1.2 mΩ devices, enabling >96% peak efficiency at 10 kW output.

Use Scenario: Three-phase inverter driving brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, handling 150 A peak phase current with PWM frequencies up to 20 kHz.

Use Value: Robust avalanche rating and low Q_gd (54 nC) minimize shoot-through risk and improve fault tolerance during rapid torque transients.

Onboard Charger (OBC) Primary Switch

Industrial 40 V Switching Regulators

Use Scenario: AC/DC PFC + LLC resonant stage in 6.6 kW EV onboard chargers.

IC Role / Device Role / Timing Role: High-current primary-side switch in LLC half-bridge, conducting 200+ A pulses at 150–300 kHz.

Use Value: Optimized C_iss/C_rss ratio (14200 pF / 1300 pF) enables zero-voltage switching across wide load range, reducing EMI and gate drive loss.

Use Scenario: High-current step-down regulator for factory automation PLC I/O modules and servo amplifier power rails.

IC Role / Device Role / Timing Role: Main power switch in synchronous buck converter delivering 200 A at 5–12 V from 40 V bus.

Use Value: TO-220SM(W) package allows direct bolt-down heatsinking, eliminating thermal interface material and simplifying mechanical layout for high-volume production.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(ON) = 0.75 mΩ (typ.), Q_g = 240 nC, TO-263-7 package, AEC-Q101 qualified.	Surface-mount only; no insulated drain tab-requires PCB copper area for thermal management instead of bolted heatsink.	Preferred for space-constrained SMT-only designs where board-level thermal spreading replaces discrete heatsinking.
IRFP4868PbF	R_DS(ON) = 0.85 mΩ (typ.), Q_g = 270 nC, TO-247AC package, not AEC-Q101 qualified.	Larger footprint and higher gate charge increase switching loss; lacks automotive qualification for safety-critical systems.	Suitable for cost-sensitive industrial SMPS where automotive qualification is unnecessary and layout allows TO-247 mounting.

Compared with STL220N4F7AG and IRFP4868PbF, the TKR74F04PB uniquely combines AEC-Q101 compliance, sub-0.7 mΩ on-resistance, and TO-220SM(W)'s bolt-down heatsink interface-making it the optimal choice for automotive 40 V power stages demanding both reliability and thermal simplicity.

Availability

TKR74F04PB is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering motor drivers, and industrial 40 V switching regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TKR74F04PB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in automotive and industrial power electronics.

The TKR74F04PB belongs to Toshiba's U-MOSⅣ-H automotive power MOSFET family, engineered specifically for high-efficiency, high-reliability 40 V battery systems-including mild-hybrid vehicles, EPS, and onboard chargers-where low R_DS(ON), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current rating for TKR74F04PB?

The TKR74F04PB is rated for 250 A continuous drain current (I_D) at case temperature T_c = 25 °C. This rating assumes proper heatsinking via the drain-connected tab in the TO-220SM(W) package. At elevated case temperatures, derating applies per the Safe Operating Area curve in the datasheet-e.g., ~150 A at T_c = 100 °C. The TKR74F04PB must be used within its thermal limits to maintain reliability and avoid channel temperature exceeding 175 °C.

Is TKR74F04PB suitable for automotive applications?

Yes, the TKR74F04PB is AEC-Q101 qualified and explicitly designed for automotive use. It meets rigorous stress test requirements including high-temperature reverse bias (HTRB), temperature cycling, and unclamped inductive switching (UIS). Its 40 V V_DSS, low R_DS(ON), and 731 mJ avalanche energy make it appropriate for 12 V/48 V battery systems, EPS, DC-DC converters, and other safety-critical automotive power stages. The TKR74F04PB carries RoHS-compliant marking per Toshiba's environmental specifications.

What is the gate threshold voltage range for TKR74F04PB?

The TKR74F04PB has a gate threshold voltage (V_th) range of 2.0 V to 3.0 V, measured at V_DS = 10 V and I_D = 1 mA. This enhancement-mode specification ensures reliable turn-on with standard logic-level gate drivers and prevents accidental conduction during low-voltage startup or noise events. The TKR74F04PB requires ≥4 V gate drive for full enhancement and minimal R_DS(ON); typical operation uses 10 V for optimal on-resistance and switching speed.

Does TKR74F04PB include an integrated body diode?

Yes, the TKR74F04PB features an inherent parasitic body diode formed between source and drain. Its reverse recovery characteristics are specified: t_rr = 144 ns (typ.) and Q_rr = 180 nC (typ.) at I_DR = 250 A and -dI_DR/dt = 50 A/µs. While usable for freewheeling, the body diode is not optimized for fast recovery-designers should consider synchronous rectification or external Schottky diodes in high-frequency, high-efficiency applications. The TKR74F04PB's diode forward voltage is -1.2 V (max) at 250 A.

What package type does TKR74F04PB use, and how is thermal management implemented?

The TKR74F04PB uses the TO-220SM(W) package (Toshiba designation: 2-10W1S), a surface-mount variant with an insulated drain tab that serves as both electrical connection and thermal interface. Thermal management relies on bolting the drain tab directly to an external heatsink-achieving R_th(ch-c) = 0.4 °C/W. Unlike through-hole TO-220, TO-220SM(W) mounts flat to the PCB with heatsink contact from above, eliminating solder joint thermal bottlenecks. The TKR74F04PB's 1.07 g mass and copper tab design support stable thermal performance in high-power automotive environments.

TKR74F04PB,LXGQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 250A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 0.74mOhm @ 125A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 227 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14200 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-220SM(W)

TKR74F04PB,LXGQ FAQ

1.How can I place an order for TKR74F04PB,LXGQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TKR74F04PB,LXGQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TKR74F04PB,LXGQ reliable?

The price and inventory of TKR74F04PB,LXGQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TKR74F04PB,LXGQ is usually 5 days.

3.What payment methods are accepted for TKR74F04PB,LXGQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TKR74F04PB,LXGQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TKR74F04PB,LXGQ?

TKR74F04PB,LXGQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TKR74F04PB,LXGQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TKR74F04PB,LXGQ?

For technical support, including TKR74F04PB,LXGQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TKR74F04PB,LXGQ requirements.

6.How does Aetrix verify that TKR74F04PB,LXGQ is sourced from the original manufacturer or authorized distributors?

All TKR74F04PB,LXGQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TKR74F04PB,LXGQ meets industry standards.

7.What is the process for return or replacement of TKR74F04PB,LXGQ?

All TKR74F04PB,LXGQ units undergo pre-shipment inspection (PSI). If there is an issue with TKR74F04PB,LXGQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TKR74F04PB,LXGQ part is unused and in its original packaging.

Return procedure for TKR74F04PB,LXGQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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