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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology TN0106N3-G-P003

Name: TN0106N3-G-P003
Brand: Microchip Technology
SKU: TN0106N3-G-P003
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TN0106N3-G-P003

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: TN0106N3-G-P003.pdf

Description:: MOSFET N-CH 60V 350MA TO92-3

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Product details

Overview

TN0106N3-G-P003 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, featuring 60 V drain-to-source breakdown voltage, 2 V maximum gate threshold voltage, 4.5 Ω maximum R_DS(ON) at 4.5 V_GS, 50 pF typical input capacitance, and operation from –55°C to +150°C - ideal for logic-level interfacing in battery-operated systems and solid-state relays.

For engineers reviewing the TN0106N3-G-P003 datasheet, TN0106N3-G-P003 pinout, TN0106N3-G-P003 application, or TN0106N3-G-P003 equivalent, this page delivers verified electrical specs, thermal performance data, gate drive dynamics, diode recovery characteristics, and real-world use context for low-threshold switching design.

Technical Context

This device uses a vertical DMOS structure with silicon-gate process to combine bipolar-like power handling with MOS advantages: high input impedance (>10¹² Ω), positive temperature coefficient for inherent current sharing, and immunity to thermal runaway and secondary breakdown. Its low 0.6–2 V_GS(th) enables direct TTL/CMOS drive without level-shifting.

AC performance includes 2–5 ns turn-on delay, 3–6 ns rise/fall times (R_GEN = 25 Ω), and characterized capacitances (C_ISS = 50 pF typ, C_OSS = 25 pF typ) supporting high-speed switching up to several MHz in low-power analog and digital line-driving applications.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - supports 48 V rail systems with 20% margin before avalanche onset
VGS(th)	0.6–2 V - ensures reliable turn-on with 3.3 V or 5 V logic outputs
RDS(ON)	1.6–4.5 Ω - delivers ≤1.4 A continuous ID(ON) with <1 W conduction loss at 500 mA
CISS	50 pF typ - minimizes gate drive energy and propagation delay in fast-switching circuits
td(ON)/tr	2–5 ns / 3–5 ns - enables clean edge control in sub-100 ns timing-critical paths
θJA	132 °C/W - defines thermal derating: 1 W max dissipation at TA = 25°C, zero at TC ≈ 157°C
VSD	1–1.5 V - body diode forward drop limits reverse recovery losses in flyback or bidirectional switching

Pinout & Package

Package: 3-lead TO-92 (top view), Pb-free/RoHS-compliant, marked "TN0106 N3 e3" with year-week traceability code.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Reference node for gate drive and current return path	Connected to system ground or low-side return; sets VGS reference and influences layout parasitics
2 (Gate)	Control terminal for channel conduction	High-impedance input requiring minimal drive current; sensitive to ESD and ringing due to 50 pF CISS
3 (Drain)	Power output terminal carrying switched load current	Connected to positive rail or inductive load; must handle 60 V transients and 2 A pulsed current

Key Features

Feature	Design Value
2 V maximum low threshold	Enables direct interface with 3.3 V microcontrollers and CMOS logic without gate drivers
50 pF typical input capacitance	Reduces required gate charge to ~100 pC, easing drive from low-current sources
Free from secondary breakdown	Allows safe operation under inductive switching stress without SOA derating constraints
–55°C to +150°C operating range	Supports deployment in automotive engine bays, industrial enclosures, and outdoor PV systems
Low on-resistance tempco	ΔRDS(ON) = 0.6–1.1 %/°C ensures stable conduction loss across full temperature range

Applications

Logic-Level Interface	Solid-State Relay
Use Scenario: Driving optocoupler inputs or LED arrays from 3.3 V MCU GPIO pins in portable instrumentation. IC Role / Device Role / Timing Role: Low-threshold switch enabling direct logic-level control without level shifters or external biasing. Use Value: Eliminates 2–3 passive components per channel while maintaining <100 ns response and <1 µA leakage at VGS = 0 V.	Use Scenario: Replacing electromechanical relays in HVAC control panels where silent operation and >100 k-cycle lifetime are required. IC Role / Device Role / Timing Role: Main power switch isolating 24 V AC/DC loads with integrated body diode for snubbing. Use Value: Achieves <5 ms turn-on/off with no contact bounce, zero EMI from arcing, and 150°C ambient rating for sealed enclosures.
Battery-Operated System	Photovoltaic Drive
Use Scenario: Power gating of GPS modules and BLE radios in handheld asset trackers powered by Li-ion cells. IC Role / Device Role / Timing Role: Load switch managing sleep/wake current paths with ultra-low quiescent drain. Use Value: Delivers <10 µA IDSS at room temperature and <500 µA at 125°C, extending battery life by >15% versus higher-Vth alternatives.	Use Scenario: Bypass switching in solar charge controllers to route panel current around MPPT circuitry during partial shading. IC Role / Device Role / Timing Role: High-voltage, low-leakage bypass FET activated by analog comparator output. Use Value: Withstands 60 V DC string voltage and exhibits only 10 µA IDSS at VDS = 60 V, minimizing daytime leakage loss.

Logic-Level Interface

Solid-State Relay

Use Scenario: Driving optocoupler inputs or LED arrays from 3.3 V MCU GPIO pins in portable instrumentation.

IC Role / Device Role / Timing Role: Low-threshold switch enabling direct logic-level control without level shifters or external biasing.

Use Value: Eliminates 2–3 passive components per channel while maintaining <100 ns response and <1 µA leakage at VGS = 0 V.

Use Scenario: Replacing electromechanical relays in HVAC control panels where silent operation and >100 k-cycle lifetime are required.

IC Role / Device Role / Timing Role: Main power switch isolating 24 V AC/DC loads with integrated body diode for snubbing.

Use Value: Achieves <5 ms turn-on/off with no contact bounce, zero EMI from arcing, and 150°C ambient rating for sealed enclosures.

Battery-Operated System

Photovoltaic Drive

Use Scenario: Power gating of GPS modules and BLE radios in handheld asset trackers powered by Li-ion cells.

IC Role / Device Role / Timing Role: Load switch managing sleep/wake current paths with ultra-low quiescent drain.

Use Value: Delivers <10 µA IDSS at room temperature and <500 µA at 125°C, extending battery life by >15% versus higher-Vth alternatives.

Use Scenario: Bypass switching in solar charge controllers to route panel current around MPPT circuitry during partial shading.

IC Role / Device Role / Timing Role: High-voltage, low-leakage bypass FET activated by analog comparator output.

Use Value: Withstands 60 V DC string voltage and exhibits only 10 µA IDSS at VDS = 60 V, minimizing daytime leakage loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG1012T-7	Lower RDS(ON) (0.27 Ω @ 4.5 V), SOT-23 package, 20 V BVDSS	Not suitable for 48 V systems; limited to ≤20 V rails and <1 A continuous loads	Select when board space is constrained and voltage requirements are ≤20 V.
SI2302DS-T1-GE3	2.3 V VGS(th) max, SOT-23, 20 V BVDSS, 0.075 Ω RDS(ON)	Higher threshold requires 5 V logic; unsuitable for 3.3 V direct drive or 48 V operation	Choose for cost-sensitive 5 V logic interfaces where low RDS(ON) outweighs threshold and voltage needs.

Compared with TN0106N3-G-P003, DMG1012T-7 offers lower conduction loss but sacrifices 60 V capability and TO-92 mechanical robustness, while SI2302DS-T1-GE3 provides superior RDS(ON) yet cannot replace TN0106N3-G-P003 in 3.3 V logic-driven, high-voltage, or thermally demanding applications.

Availability

TN0106N3-G-P003 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, and photovoltaic drives requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for TN0106N3-G-P003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global provider of microcontroller, analog, FPGA, and timing solutions, serving industrial, automotive, communications, and consumer markets with vertically integrated design and manufacturing.

TN0106N3-G-P003 belongs to Microchip's legacy vertical DMOS FET product line, engineered specifically for low-threshold, high-reliability switching in resource-constrained and thermally aggressive environments.

FAQ

What is the maximum continuous drain current rating for TN0106N3-G-P003 at 25°C ambient?

The TN0106N3-G-P003 has a continuous drain current rating of 350 mA at TA = 25°C, limited by its 1 W power dissipation and 132 °C/W junction-to-ambient thermal resistance. At elevated temperatures or with heatsinking, derating applies per the thermal response curve on page 4 of DS20005932A.

Does TN0106N3-G-P003 include an integrated body diode, and what are its key parameters?

Yes, TN0106N3-G-P003 includes a built-in source-drain body diode with 1–1.5 V forward voltage drop at 500 mA and 400 ns reverse recovery time under specified test conditions. This diode supports freewheeling in inductive loads but is not rated for continuous bidirectional conduction.

Can TN0106N3-G-P003 be driven directly by a 3.3 V microcontroller GPIO pin?

Yes, TN0106N3-G-P003 can be driven directly by a 3.3 V microcontroller GPIO pin because its gate threshold voltage is specified from 0.6 V to 2.0 V, ensuring full enhancement and low RDS(ON) at VGS = 3.3 V - confirmed by ID(ON) = 1.4 A at VGS = 5 V and RDS(ON) = 2 Ω typ at VGS = 4.5 V.

What is the gate-to-source voltage limit for TN0106N3-G-P003, and why is it critical?

The gate-to-source voltage limit for TN0106N3-G-P003 is ±20 V absolute maximum. Exceeding this risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) or limiting resistors, especially in noisy environments or when using inductive gate drivers.

How does temperature affect the threshold voltage and on-resistance of TN0106N3-G-P003?

TN0106N3-G-P003 exhibits a negative VGS(th) temperature coefficient (–3.2 to –5 mV/°C) and a positive RDS(ON) temperature coefficient (0.6–1.1 %/°C). This means threshold lowers and on-resistance rises with temperature - improving current sharing in parallel configurations and preventing thermal runaway.

TN0106N3-G-P003 Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 350mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 60 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

TN0106N3-G-P003 FAQ

1.How can I place an order for TN0106N3-G-P003 through Aetrix?

Please submit a Request for Quotation (RFQ) for TN0106N3-G-P003 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TN0106N3-G-P003 reliable?

The price and inventory of TN0106N3-G-P003 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TN0106N3-G-P003 is usually 5 days.

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TN0106N3-G-P003 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TN0106N3-G-P003 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TN0106N3-G-P003?

For technical support, including TN0106N3-G-P003 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TN0106N3-G-P003 requirements.

6.How does Aetrix verify that TN0106N3-G-P003 is sourced from the original manufacturer or authorized distributors?

All TN0106N3-G-P003 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TN0106N3-G-P003 meets industry standards.

7.What is the process for return or replacement of TN0106N3-G-P003?

All TN0106N3-G-P003 units undergo pre-shipment inspection (PSI). If there is an issue with TN0106N3-G-P003, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TN0106N3-G-P003 part is unused and in its original packaging.

Return procedure for TN0106N3-G-P003:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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