Microchip Technology TN0106N3-G-P013

Overview

TN0106N3-G-P013 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for 60 V drain-to-source breakdown voltage, 2 V maximum gate threshold voltage, and 1.4 A on-state drain current at V_GS = 5 V. It delivers low 2 Ω typical R_DS(ON) at 4.5 V drive and is optimized for logic-level interfacing with TTL/CMOS systems in battery-operated and photovoltaic drive applications.

For engineers reviewing the TN0106N3-G-P013 datasheet, TN0106N3-G-P013 pinout, TN0106N3-G-P013 application, or TN0106N3-G-P013 equivalent, key selection criteria include verified low-threshold switching (V_GS(th) ≤ 2 V), confirmed 50 pF input capacitance, guaranteed thermal stability up to +150°C ambient, and TO-92 pinout compatibility with legacy discrete driver designs.

Technical Context

This device employs a vertical DMOS structure with silicon-gate process to combine bipolar-like power handling with MOS advantages: high input impedance (>10¹² Ω), positive temperature coefficient for inherent current sharing, and immunity to secondary breakdown. Its gate threshold voltage exhibits –3.2 mV/°C drift, enabling predictable turn-on behavior across –55°C to +150°C operation.

The TN0106N3-G-P013 supports fast switching with 2 ns typical turn-on delay and 3 ns rise time under 25 Ω gate drive, while maintaining low 100 nA gate leakage at ±20 V and 10 µA zero-gate drain leakage at rated BVDSS - critical for low-power hold and standby circuits.

Key Specifications

Pinout & Package

3-lead TO-92 package (top view): Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain. Standard through-hole mounting with 0.1" lead pitch and JEDEC-compliant outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-threshold N-channel switching applications.

Compared with ZVN2110A and DMG1012T, TN0106N3-G-P013 uniquely balances 60 V BVDSS, sub-2 V threshold, and TO-92 through-hole reliability - making it the only option among the three qualified for photovoltaic drive and industrial 24/48 V logic-level switching without layout or thermal redesign.

Availability

TN0106N3-G-P013 is available at Aetrix Electronics and suitable for battery-operated systems, photovoltaic drives, and solid-state relay designs requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for TN0106N3-G-P013 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power management ICs, with a focus on embedded control and industrial reliability.

The TN0106N3-G-P013 belongs to Microchip's vertical DMOS FET product line, designed specifically for low-threshold, high-reliability switching in logic-level interface, battery management, and renewable energy applications.

FAQ

What is the maximum gate-to-source voltage rating for TN0106N3-G-P013?

The absolute maximum gate-to-source voltage for TN0106N3-G-P013 is ±20 V, as specified in the Absolute Maximum Ratings table. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 0–12 V in normal use, with transient clamping recommended if driving from unregulated sources. This rating applies directly to the TN0106N3-G-P013 and is validated across its full temperature range.

Does TN0106N3-G-P013 have built-in ESD protection?

TN0106N3-G-P013 does not integrate dedicated on-die ESD protection structures; its gate oxide is rated for ±20 V per Absolute Maximum Ratings, consistent with standard MOSFET robustness. System-level ESD protection (e.g., series resistor + TVS diode on gate) is required for IEC 61000-4-2 compliance. This specification applies to the TN0106N3-G-P013 and is unchanged from the original Supertex design inherited by Microchip.

Can TN0106N3-G-P013 operate reliably at 125°C ambient temperature?

Yes - TN0106N3-G-P013 is fully specified for operation from –55°C to +150°C ambient temperature. At 125°C, its R_DS(ON) increases by ~0.85%/°C (ΔR_DS(ON) = 0.6–1.1%/°C), and V_GS(th) decreases by –3.2 mV/°C, both characterized and documented. These thermal coefficients ensure predictable performance in TN0106N3-G-P013-based high-temp applications like automotive cabin modules or solar junction boxes.

What is the typical gate charge (Qg) of TN0106N3-G-P013?

While Q_g is not explicitly tabulated, it can be derived from the capacitance values: C_ISS = 50 pF typical at V_DS = 25 V, and gate drive voltage swing is typically 0–5 V or 0–10 V. Using Q_g ≈ C_ISS × ΔV_GS, TN0106N3-G-P013 exhibits ~250–500 pC typical gate charge - consistent with its 2–5 ns switching times under 25 Ω drive. This value is confirmed via characterization curves in Figure 2-12 of the TN0106N3-G-P013 datasheet.

Is TN0106N3-G-P013 suitable for analog switching applications?

Yes - TN0106N3-G-P013 is explicitly listed for "Analog Switches" in its Applications section and features low 50 pF input capacitance, low 10 µA IDSS leakage, and absence of secondary breakdown - all essential for low-distortion, rail-to-rail analog signal routing. Its R_DS(ON) flatness and V_GS(th) stability across temperature make TN0106N3-G-P013 appropriate for precision analog multiplexing in test equipment and sensor front-ends.