Microchip Technology TN0110N3-G-P002

Overview

TN0110N3-G-P002 from Supertex Inc. is an N-channel enhancement-mode vertical DMOS FET optimized for low-threshold logic-level switching, with 100V drain-source breakdown voltage, ≤2.0Ω R_DS(ON) at V_GS = 10V, 2.0A continuous drain current, and 2.0V max gate threshold voltage - ideal for TTL/CMOS interface circuits in battery-powered systems.

For engineers reviewing the TN0110N3-G-P002 datasheet, TN0110N3-G-P002 pinout, TN0110N3-G-P002 application, or TN0110N3-G-P002 equivalent, key selection criteria include verified low V_GS(th), TO-92 package thermal resistance (132°C/W), fast switching (t_d(ON) ≤ 5ns), and guaranteed R_DS(ON) performance across temperature.

Technical Context

This device employs a vertical DMOS structure with silicon-gate process to combine bipolar-like power handling with MOS advantages: high input impedance (>10¹² Ω), low input capacitance (50pF typical), and positive temperature coefficient for inherent thermal stability. It avoids secondary breakdown and thermal runaway.

Designed for DC and pulsed switching, it supports 1.0W power dissipation at T_C = 25°C, operates from −55°C to +150°C, and features integrated body diode (V_SD = 1.5V max at 500mA) with 400ns reverse recovery time - enabling use in analog switches and solid-state relay drivers without external flyback protection.

Key Specifications

Pinout & Package

Supplied in JEDEC-standard 3-lead TO-92 package (N3 variant), with lead-free/RoHS-compliant finish. Package outline conforms to Supertex Doc.# DSPD-3TO92N3 (Version E041009).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold switching applications.

Compared with DMG2302U-7 and IRLML2502TRPBF, TN0110N3-G-P002 provides unique 100V capability and TO-92 through-hole reliability in legacy designs, while its 2.0V V_GS(th) and 132°C/W thermal resistance make it optimal for thermally constrained, medium-voltage logic interfacing where SMT alternatives fall short.

Availability

TN0110N3-G-P002 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay modules, logic-level interface circuits, and photovoltaic gate drive applications requiring stable component supply and long-term industrial availability.

Supply support for TN0110N3-G-P002 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Supertex Inc. was a U.S.-based semiconductor company specializing in high-voltage analog and power management ICs, acquired by Microchip Technology in 2017. Known for rugged, application-focused discrete MOSFETs and LED drivers.

The TN0110 product line delivers low-threshold, high-breakdown vertical DMOS FETs engineered for reliable logic-level switching in harsh environments - targeting industrial controls, telecom infrastructure, and energy-efficient portable systems.

FAQ

What is the maximum gate-to-source voltage rating for TN0110N3-G-P002?

The absolute maximum gate-to-source voltage (V_GS) for TN0110N3-G-P002 is ±20V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to 10V to ensure margin against transients and maintain R_DS(ON) stability. The TN0110N3-G-P002 datasheet confirms this rating applies across the full operating temperature range.

Does TN0110N3-G-P002 have a built-in body diode, and what are its characteristics?

Yes, TN0110N3-G-P002 integrates a parasitic body diode with forward voltage V_SD = 1.5V max at 500mA and reverse recovery time t_rr = 400ns. This diode conducts from source to drain and supports freewheeling in inductive switching applications. Its parameters are measured under V_GS = 0V conditions and are fully characterized in the Electrical Characteristics table of the TN0110N3-G-P002 datasheet.

Can TN0110N3-G-P002 be used directly with 3.3V microcontroller outputs?

Yes, TN0110N3-G-P002 can be driven directly by 3.3V microcontroller GPIO pins because its gate threshold voltage V_GS(th) is guaranteed ≤2.0V max, ensuring full enhancement at 3.3V. At V_GS = 3.3V, the device delivers ≥1.4A ID(ON) (per datasheet, TA = 25°C), making it suitable for moderate-load logic-level interfacing without external level shifting.

What is the thermal resistance junction-to-ambient (θja) for TN0110N3-G-P002 in its TO-92 package?

The junction-to-ambient thermal resistance (θ_ja) for TN0110N3-G-P002 in the standard TO-92 package is 132°C/W, as published in the Thermal Characteristics section. This value assumes mounting on FR-4 PCB with minimal copper pour; actual performance improves with added copper area or heatsinking. The TN0110N3-G-P002 datasheet specifies this rating applies at T_C = 25°C with natural convection.

Is TN0110N3-G-P002 RoHS compliant and lead-free?

Yes, TN0110N3-G-P002 is RoHS compliant and lead-free, indicated by the "-G" suffix in the part number per Supertex's ordering information. The device meets EU Directive 2011/65/EU requirements, and packaging documentation (Doc.# DSFP-TN0110) explicitly states "-G denotes a lead (Pb)-free / RoHS compliant package." Full compliance documentation is available upon request from Aetrix Electronics.