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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology TN0610N3-G-P003

Name: TN0610N3-G-P003
Brand: Microchip Technology
SKU: TN0610N3-G-P003
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TN0610N3-G-P003

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-226-3, TO-92-3 (TO-226AA)

Datasheet:: TN0610N3-G-P003.pdf

Description:: MOSFET N-CH 100V 500MA TO92-3

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Product details

Overview

TN0610N3-G-P003 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, featuring 100 V drain-to-source breakdown voltage, 2 V maximum gate threshold voltage, and 1.5 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 750 mA. It delivers fast switching (t_d(ON) ≤ 6 ns, t_f ≤ 16 ns), low input capacitance (100 pF typ), and high input impedance - ideal for logic-level interfacing in battery-operated systems and solid-state relays.

For engineers reviewing the TN0610N3-G-P003 datasheet, TN0610N3-G-P003 pinout, TN0610N3-G-P003 application, or TN0610N3-G-P003 equivalent, this device supports TTL/CMOS-compatible drive, requires no level-shifting circuitry, operates across –55°C to +150°C ambient, and serves as a robust discrete switch where low-threshold turn-on and thermal stability are critical.

Technical Context

This vertical DMOS FET uses a silicon-gate process with inherent positive temperature coefficient and immunity to secondary breakdown and thermal runaway. Its structure enables bipolar-like power handling while retaining MOS advantages: high input impedance (>10¹² Ω), low gate leakage (<100 nA), and stable V_GS(th) drift (–4.5 mV/°C).

The device exhibits low capacitive loading (C_ISS = 100 pF typ at V_DS = 25 V) and fast dynamic response, supported by characterized transconductance (G_FS = 500 mmho typ at I_D = 1 A). Diode parameters include V_SD = 0.8 V typ and t_rr = 300 ns, confirming suitability for bidirectional switching and flyback recovery in line drivers and photovoltaic interfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	100 V - Withstands up to 100 V drain-to-source before avalanche conduction begins; enables use in 48 V industrial bus and photovoltaic string applications.
VGS(th)	0.6–2.0 V - Guaranteed turn-on with standard 3.3 V or 5 V logic; eliminates need for gate boosters in low-voltage microcontroller-driven switches.
RDS(ON)	1.5 Ω max at VGS = 5 V, ID = 750 mA - Delivers <1.2 W conduction loss at 750 mA, supporting thermally constrained TO-92 packaging.
CISS	100 pF typ - Minimizes gate drive energy and propagation delay; allows direct drive from low-power GPIOs without external buffers.
td(ON)/tf	≤6 ns / ≤16 ns - Enables >20 MHz switching in digital line drivers and telecom multiplexing without significant timing skew.
ID(ON)	3 A min at VGS = 10 V - Sustains pulsed loads up to 3.2 A (TO-92 limited), suitable for intermittent relay replacement and analog switch control.
θJA	132 °C/W - Defines thermal derating curve; limits continuous power dissipation to 1 W at TA = 25°C in still air.

Pinout & Package

3-lead TO-92 package with molded plastic body, Pb-free matte tin plating (JEDEC e3), and top-view pinout: Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Reference node for gate drive and current return path	Internally connected to substrate; must be tied to system ground or low-side reference for proper VGS biasing.
2 (Gate)	Control terminal for channel formation	High-impedance MOS input requiring <100 nA leakage; sensitive to ESD but tolerant of ±20 V transient stress.
3 (Drain)	Power output terminal carrying switched load current	Connected to high-side load or supply rail; handles full BVDSS rating and pulsed IDRM up to 3.2 A.

Key Features

Feature	Design Value
2 V maximum low threshold	Ensures reliable turn-on with 3.3 V MCU outputs and eliminates external level shifters in portable logic interfaces.
100 pF typical input capacitance	Reduces gate charge (QG ≈ 95 pC at VGS = 10 V), enabling efficient drive from low-current digital sources.
Free from secondary breakdown	Allows safe operation under inductive load switching without snubbers or derating for SOA violations.
–55°C to +150°C operating range	Supports deployment in automotive engine compartments, outdoor telecom enclosures, and industrial motor controls.
Low on-resistance temperature coefficient	ΔRDS(ON) = 0.75 %/°C ensures predictable conduction loss rise over temperature - simplifies thermal design.

Applications

Logic-Level Interface	Solid-State Relay
Use Scenario: Interfacing 3.3 V ARM Cortex-M GPIOs to 24 V DC solenoid control lines in programmable logic controllers. IC Role / Device Role / Timing Role: Discrete N-channel switch providing level-shifted, isolated load control without optocoupler or driver IC. Use Value: Eliminates gate driver ICs and reduces BOM count; 2 V VGS(th) ensures full enhancement at 3.3 V, minimizing static power in always-on control nodes.	Use Scenario: Replacing electromechanical relays in HVAC zone actuators requiring silent, wear-free switching at 12–48 V DC. IC Role / Device Role / Timing Role: Power switch element in zero-crossing or random-phase AC/DC solid-state relay modules. Use Value: 100 V BVDSS and 3.2 A pulsed rating support 48 V DC loads; absence of secondary breakdown permits direct inductive load switching.
Battery-Operated System	Photovoltaic Drive
Use Scenario: Low-power load switching in handheld medical monitors powered by single-cell Li-ion (2.8–4.2 V). IC Role / Device Role / Timing Role: High-side or low-side power gate controlling display backlight, sensor bias, or USB charging path. Use Value: 100 nA IGSS and 10 µA IDSS minimize standby current; 2 V VGS(th) guarantees turn-on even at end-of-discharge voltage (~2.8 V).	Use Scenario: String-level bypass switching in solar panel microinverters to mitigate partial shading losses. IC Role / Device Role / Timing Role: Active bypass FET shunting individual PV cells or submodules during mismatch conditions. Use Value: 100 V BVDSS accommodates open-circuit voltages up to 90 V per string; fast 16 ns fall time enables precise MPPT algorithm synchronization.

Logic-Level Interface

Solid-State Relay

Use Scenario: Interfacing 3.3 V ARM Cortex-M GPIOs to 24 V DC solenoid control lines in programmable logic controllers.

IC Role / Device Role / Timing Role: Discrete N-channel switch providing level-shifted, isolated load control without optocoupler or driver IC.

Use Value: Eliminates gate driver ICs and reduces BOM count; 2 V VGS(th) ensures full enhancement at 3.3 V, minimizing static power in always-on control nodes.

Use Scenario: Replacing electromechanical relays in HVAC zone actuators requiring silent, wear-free switching at 12–48 V DC.

IC Role / Device Role / Timing Role: Power switch element in zero-crossing or random-phase AC/DC solid-state relay modules.

Use Value: 100 V BVDSS and 3.2 A pulsed rating support 48 V DC loads; absence of secondary breakdown permits direct inductive load switching.

Battery-Operated System

Photovoltaic Drive

Use Scenario: Low-power load switching in handheld medical monitors powered by single-cell Li-ion (2.8–4.2 V).

IC Role / Device Role / Timing Role: High-side or low-side power gate controlling display backlight, sensor bias, or USB charging path.

Use Value: 100 nA IGSS and 10 µA IDSS minimize standby current; 2 V VGS(th) guarantees turn-on even at end-of-discharge voltage (~2.8 V).

Use Scenario: String-level bypass switching in solar panel microinverters to mitigate partial shading losses.

IC Role / Device Role / Timing Role: Active bypass FET shunting individual PV cells or submodules during mismatch conditions.

Use Value: 100 V BVDSS accommodates open-circuit voltages up to 90 V per string; fast 16 ns fall time enables precise MPPT algorithm synchronization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	SO-8 package, 20 V BVDSS, 0.045 Ω RDS(ON) at 4.5 V - lower voltage, higher current, surface-mount only.	Targeted at 5 V logic and high-efficiency DC-DC sync rectification, not high-voltage line driving.	Select when board space allows SO-8 and system voltage stays below 20 V; not suitable for 48 V or photovoltaic applications.
IRF5210PBF	TO-220 package, –100 V BVDSS, 63 mΩ RDS(ON) at 10 V - P-channel, higher current, larger footprint.	Used in high-side switching and H-bridge configurations where polarity reversal is required.	Choose only for complementary high-side designs; incompatible pinout and polarity prevent drop-in replacement.

Compared with TN0610N3-G-P003, DMN2004LK-7 offers superior conduction efficiency at low voltage but lacks high-voltage capability, while IRF5210PBF provides higher power handling in a different package and polarity - neither matches the unique combination of TO-92 form factor, 100 V rating, and sub-2 V threshold in a single N-channel device.

Availability

TN0610N3-G-P003 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, and photovoltaic drive circuits requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for TN0610N3-G-P003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power semiconductors, with global manufacturing and quality certifications including ISO 9001 and AEC-Q100.

TN0610N3-G-P003 belongs to Microchip's vertical DMOS FET product line, engineered for high-reliability switching in logic-level interface, battery-powered, and industrial control applications where low threshold, thermal robustness, and SOA integrity are essential.

FAQ

What is the maximum gate-to-source voltage rating for TN0610N3-G-P003?

The absolute maximum gate-to-source voltage for TN0610N3-G-P003 is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent gate oxide damage. For reliable long-term performance, gate drive should be clamped to ≤15 V in normal use, especially under transient conditions or elevated temperature.

Can TN0610N3-G-P003 be used directly with a 3.3 V microcontroller GPIO?

Yes, TN0610N3-G-P003 can be driven directly by a 3.3 V microcontroller GPIO because its gate threshold voltage is guaranteed ≤2.0 V and typically 0.6–1.2 V. At VGS = 3.3 V, RDS(ON) drops to ≤2 Ω (at ID = 750 mA), ensuring full enhancement and low conduction loss without external level shifting.

What is the thermal resistance junction-to-ambient for TN0610N3-G-P003 in its TO-92 package?

The junction-to-ambient thermal resistance (θJA) for TN0610N3-G-P003 in the 3-lead TO-92 package is 132 °C/W under standard test conditions (still air, PCB-mounted). This value defines the worst-case temperature rise per watt of dissipated power and must be used to calculate maximum allowable continuous current at elevated ambient temperatures.

Does TN0610N3-G-P003 have integrated body diode functionality?

Yes, TN0610N3-G-P003 includes an intrinsic body diode between source and drain, with a forward voltage drop of 0.8 V typical at ISD = 1.5 mA and reverse recovery time of 300 ns. This diode supports freewheeling in inductive loads and enables bidirectional current flow in analog switch and photovoltaic bypass applications.

Is TN0610N3-G-P003 suitable for automotive under-hood applications?

TN0610N3-G-P003 supports an operating ambient temperature range of –55°C to +150°C and is qualified per Microchip's industrial reliability standards. While not AEC-Q101 certified, its thermal and electrical robustness makes it suitable for non-safety-critical under-hood functions such as cabin fan control or sensor power gating - subject to customer qualification per application requirements.

TN0610N3-G-P003 Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 3V, 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 750mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

TN0610N3-G-P003 FAQ

1.How can I place an order for TN0610N3-G-P003 through Aetrix?

Please submit a Request for Quotation (RFQ) for TN0610N3-G-P003 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TN0610N3-G-P003 reliable?

The price and inventory of TN0610N3-G-P003 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TN0610N3-G-P003 is usually 5 days.

3.What payment methods are accepted for TN0610N3-G-P003?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TN0610N3-G-P003 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TN0610N3-G-P003?

TN0610N3-G-P003 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TN0610N3-G-P003 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TN0610N3-G-P003?

For technical support, including TN0610N3-G-P003 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TN0610N3-G-P003 requirements.

6.How does Aetrix verify that TN0610N3-G-P003 is sourced from the original manufacturer or authorized distributors?

All TN0610N3-G-P003 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TN0610N3-G-P003 meets industry standards.

7.What is the process for return or replacement of TN0610N3-G-P003?

All TN0610N3-G-P003 units undergo pre-shipment inspection (PSI). If there is an issue with TN0610N3-G-P003, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TN0610N3-G-P003 part is unused and in its original packaging.

Return procedure for TN0610N3-G-P003:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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