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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology TN2435N8-G

Name: TN2435N8-G
Brand: Microchip Technology
SKU: TN2435N8-G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TN2435N8-G

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-243AA

Datasheet:: TN2435N8-G.pdf

Description:: MOSFET N-CH 350V 365MA TO243AA

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Product details

Overview

TN2435N8-G from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead SOT-89 (TO-243AA) package, rated for 350 V drain-to-source breakdown voltage, 6 Ω maximum R_DS(ON) at V_GS = 10 V and I_D = 750 mA, and 0.8–2.5 V gate threshold voltage - ideal for logic-level interfacing with TTL/CMOS in solid-state relays and photovoltaic drive circuits.

For engineers reviewing the TN2435N8-G datasheet, TN2435N8-G pinout, TN2435N8-G application, or TN2435N8-G equivalent, this page delivers verified electrical specs, thermal resistance (θ_JA = 73°C/W), switching timing (t_d(ON) typ. 5 ns), diode recovery (t_rr typ. 300 ns), and real-world use cases in battery-operated systems and analog switches.

Technical Context

The TN2435N8-G employs a vertical DMOS structure with silicon-gate process, delivering bipolar-like power handling while retaining MOS advantages: high input impedance (>10¹² Ω), low input capacitance (C_ISS typ. 125 pF), and positive temperature coefficient for inherent thermal stability.

It operates across –55°C to +150°C ambient, features no secondary breakdown, and integrates a built-in body diode with V_SD ≤ 1.5 V at 750 mA - enabling unidirectional current conduction without external diodes in line-driver and relay-replacement topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	350 V - supports high-voltage DC bus switching up to 350 V without avalanche stress.
VGS(th)	0.8–2.5 V - enables direct drive from 3.3 V or 5 V logic without level-shifting circuitry.
RDS(ON)	6 Ω max @ VGS = 10 V, ID = 750 mA - ensures <1.1 W conduction loss at rated current.
CISS	125–200 pF - minimizes gate drive power and speeds up turn-on in low-power control loops.
td(ON)	5–20 ns - supports >10 MHz switching in high-frequency line drivers and telecom switches.
tRR	300 ns typ. - allows reliable commutation in photovoltaic and analog switch applications with minimal reverse recovery loss.
θJA	73°C/W - defines thermal derating on standard FR5 PCBs; requires heatsinking above ~1 W continuous dissipation.

Pinout & Package

3-lead SOT-89 (TO-243AA) package with exposed drain tab for thermal and electrical connection; compact 4.6 × 2.6 × 1.6 mm footprint optimized for space-constrained industrial and portable designs.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control terminal; accepts logic-level voltages (≥2.5 V) to fully enhance channel.
2,4	Drain	Main high-voltage power terminal; electrically and thermally connected to exposed metal tab.
3	Source	Reference node for gate drive and load return; ties to system ground or low-side switch common.

Key Features

Feature	Design Value
Low threshold voltage	Enables full enhancement from 3.3 V microcontrollers - eliminates gate driver ICs in battery-powered systems.
Free from secondary breakdown	Allows safe operation under inductive load switching without snubbers or derating curves.
Low input leakage (IGSS ≤ 100 nA)	Preserves battery life in always-on monitoring circuits and reduces false triggering in high-impedance nodes.
Fast switching (tr/tf ≤ 20 ns)	Minimizes transition losses in PWM-driven solid-state relays and telecom switching matrices.
Integrated body diode	Supports freewheeling in inductive loads and bidirectional signal routing in analog switch configurations.

Applications

Solid-State Relays	Photovoltaic Drives
Use Scenario: Replacing electromechanical relays in industrial PLC output modules requiring >100 k-cycle lifetime and zero contact bounce. IC Role / Device Role / Timing Role: High-voltage, low-leakage power switch controlling AC/DC loads up to 350 V with logic-compatible gate drive. Use Value: Eliminates mechanical wear and EMI from arcing; enables silent, vibration-free operation with <20 ns switching response.	Use Scenario: Driving MOSFET gates in isolated solar optimizer circuits where ultra-low gate charge and fast turn-off are critical. IC Role / Device Role / Timing Role: Low-threshold, low-C_ISS switch translating optocoupler output into precise gate control signals. Use Value: Reduces propagation delay and dynamic power loss during MPPT transitions; supports >100 kHz optimization cycles.
Analog Switches	Battery-Operated Systems
Use Scenario: Signal routing in precision instrumentation requiring low on-resistance flatness and minimal charge injection. IC Role / Device Role / Timing Role: Normally-off analog switch with R_DS(ON) variation <±10% over 0–25 V signal range. Use Value: Maintains signal integrity in multiplexed sensor front-ends; avoids distortion from nonlinear channel resistance.	Use Scenario: Power path management in handheld medical devices and portable test equipment with strict standby current budgets. IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystems with <100 nA gate leakage and <10 µA IDSS at room temperature. Use Value: Extends battery runtime by minimizing quiescent drain; supports instant wake-up via logic-level enable.

Solid-State Relays

Photovoltaic Drives

Use Scenario: Replacing electromechanical relays in industrial PLC output modules requiring >100 k-cycle lifetime and zero contact bounce.

IC Role / Device Role / Timing Role: High-voltage, low-leakage power switch controlling AC/DC loads up to 350 V with logic-compatible gate drive.

Use Value: Eliminates mechanical wear and EMI from arcing; enables silent, vibration-free operation with <20 ns switching response.

Use Scenario: Driving MOSFET gates in isolated solar optimizer circuits where ultra-low gate charge and fast turn-off are critical.

IC Role / Device Role / Timing Role: Low-threshold, low-C_ISS switch translating optocoupler output into precise gate control signals.

Use Value: Reduces propagation delay and dynamic power loss during MPPT transitions; supports >100 kHz optimization cycles.

Analog Switches

Battery-Operated Systems

Use Scenario: Signal routing in precision instrumentation requiring low on-resistance flatness and minimal charge injection.

IC Role / Device Role / Timing Role: Normally-off analog switch with R_DS(ON) variation <±10% over 0–25 V signal range.

Use Value: Maintains signal integrity in multiplexed sensor front-ends; avoids distortion from nonlinear channel resistance.

Use Scenario: Power path management in handheld medical devices and portable test equipment with strict standby current budgets.

IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystems with <100 nA gate leakage and <10 µA IDSS at room temperature.

Use Value: Extends battery runtime by minimizing quiescent drain; supports instant wake-up via logic-level enable.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel enhancement-mode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK60ZFP	600 V BVDSS, 4.5 Ω RDS(ON) @ 10 V, TO-220FP package - higher voltage rating but larger footprint and slower switching (td(OFF) 120 ns).	Better suited for mains-connected AC switching; less optimal for logic-level battery interfaces due to higher VGS(th) (2–4 V).	Choose STP3NK60ZFP only when 600 V isolation is required and board space permits TO-220FP mounting.
DMN3028LSD-13	30 V BVDSS, 28 mΩ RDS(ON) @ 4.5 V, SOT-23 package - lower voltage, much lower on-resistance, but incompatible with >50 V systems.	Optimized for 3.3/5 V digital load switching; cannot replace TN2435N8-G in photovoltaic or telecom applications requiring ≥350 V blocking.	Select DMN3028LSD-13 only for low-voltage, high-current digital power gating - not a functional substitute for TN2435N8-G's high-voltage capability.

Compared with STP3NK60ZFP and DMN3028LSD-13, the TN2435N8-G uniquely balances 350 V blocking, logic-level gate drive, and SOT-89 thermal performance - making it irreplaceable in compact, high-voltage, low-power analog and relay-replacement designs where voltage rating, threshold, and package size intersect critically.

Availability

TN2435N8-G is available at Aetrix Electronics and suitable for solid-state relays, photovoltaic drives, analog switches, battery-operated systems, and telecommunication switches requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.

Supply support for TN2435N8-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power semiconductors, with a focus on reliability, longevity, and industrial-grade qualification.

The TN2435N8-G belongs to Microchip's vertical DMOS FET product line, engineered specifically for high-voltage switching applications demanding low threshold, high input impedance, and freedom from thermal runaway - targeting solid-state relay, photovoltaic, and analog signal routing markets.

FAQ

What is the maximum continuous drain current rating for TN2435N8-G at 25°C?

The TN2435N8-G has a continuous drain current (I_D) rating of 365 mA at T_A = 25°C on an FR5 board (25 mm × 25 mm × 1.57 mm). This limit is set by junction temperature constraints and thermal resistance (θ_JA = 73°C/W); actual usable current drops to ~180 mA at 85°C ambient due to derating.

Does TN2435N8-G include an integrated body diode, and what are its key parameters?

Yes, the TN2435N8-G integrates a parasitic body diode with forward voltage V_SD ≤ 1.5 V at I_SD = 750 mA and reverse recovery time t_rr = 300 ns typical. This diode supports freewheeling in inductive loads and enables bidirectional signal routing in analog switch configurations without external components.

Can TN2435N8-G be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes - the TN2435N8-G has a gate threshold voltage range of 0.8–2.5 V, and achieves R_DS(ON) ≤ 10 Ω at V_GS = 4.5 V. A 3.3 V GPIO fully enhances the device (ID(ON) ≥ 250 mA), making external gate drivers unnecessary in low-current logic-level interface applications.

What is the thermal resistance from junction to ambient (θJA) for TN2435N8-G, and how does it affect PCB layout?

The TN2435N8-G has θ_JA = 73°C/W when mounted on a standard FR5 board (25 mm × 25 mm × 1.57 mm). To maintain T_J < 150°C at 1.6 W dissipation, ambient must stay below 40°C - requiring either copper pour under the drain tab or forced airflow. Smaller pads increase θ_JA significantly.

Is TN2435N8-G suitable for use in photovoltaic optimizer circuits, and why?

Yes - the TN2435N8-G is explicitly cited in its datasheet for photovoltaic drives. Its combination of 350 V BVDSS, low C_ISS (125 pF), fast switching (t_d(ON) = 5 ns), and logic-level V_GS(th) enables efficient, low-loss gate driving of series-connected MOSFETs in DC-DC optimizers operating under partial shading conditions.

TN2435N8-G Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 350 V

Current - Continuous Drain (Id) @ 25°C:: 365mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 3V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 750mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-243AA (SOT-89)

TN2435N8-G FAQ

1.How can I place an order for TN2435N8-G through Aetrix?

Please submit a Request for Quotation (RFQ) for TN2435N8-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TN2435N8-G reliable?

The price and inventory of TN2435N8-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TN2435N8-G is usually 5 days.

3.What payment methods are accepted for TN2435N8-G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TN2435N8-G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TN2435N8-G?

TN2435N8-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TN2435N8-G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TN2435N8-G?

For technical support, including TN2435N8-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TN2435N8-G requirements.

6.How does Aetrix verify that TN2435N8-G is sourced from the original manufacturer or authorized distributors?

All TN2435N8-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TN2435N8-G meets industry standards.

7.What is the process for return or replacement of TN2435N8-G?

All TN2435N8-G units undergo pre-shipment inspection (PSI). If there is an issue with TN2435N8-G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TN2435N8-G part is unused and in its original packaging.

Return procedure for TN2435N8-G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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