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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology TN2501N8-G

Name: TN2501N8-G
Brand: Microchip Technology
SKU: TN2501N8-G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TN2501N8-G

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-243AA

Datasheet:: TN2501N8-G.pdf

Description:: MOSFET N-CH 18V 400MA TO243AA

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Product details

Overview

TN2501N8-G from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET optimized for low-threshold logic-level switching, with 18 V drain-to-source breakdown voltage, 2.5 Ω maximum R_DS(ON) at V_GS = 3 V and 200 mA, and 110 pF maximum input capacitance. It operates across –55°C to +150°C and serves in solid-state relays, photovoltaic drives, and battery-operated CMOS/TTL interface circuits.

For engineers reviewing the TN2501N8-G datasheet, TN2501N8-G pinout, TN2501N8-G application, or TN2501N8-G equivalent, key selection criteria include gate threshold voltage (0.3–1.0 V), thermal stability (–4 mV/°C ∆V_GS(th)), safe operating area up to 1.6 W on FR4, and SOT-89 package compatibility with space-constrained analog switch and line driver designs.

Technical Context

This device uses a vertical DMOS structure with silicon-gate process to combine bipolar-like power handling with MOS advantages: high input impedance (>10¹² Ω), positive temperature coefficient for inherent current sharing, and immunity to secondary breakdown and thermal runaway. Its low 0.3 V typical V_GS(th) enables direct drive from 1.8 V and 3.3 V logic without level shifting.

AC performance targets fast switching: 5 ns turn-on delay, 15 ns rise time, and 8 ns fall time under 25 Ω gate drive; diode reverse recovery is 100 ns with 1.1–1.8 V forward drop at 200 mA. Capacitance profile (C_ISS = 110 pF, C_OSS = 60 pF, C_RSS = 35 pF at V_DS = 15 V) supports stable high-frequency operation in photovoltaic and telecom switching.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	18 V - Withstands 18 V drain-to-source before avalanche; suitable for ≤15 V rail applications with margin.
VGS(th)	0.3–1.0 V - Enables reliable turn-on from 1.8 V logic; low dispersion supports consistent timing in battery systems.
RDS(ON)	2.5 Ω max at VGS = 3 V, ID = 200 mA - Delivers <150 mW conduction loss at 200 mA, critical for thermally constrained SOT-89 layouts.
ID(ON)	250 mA min - Supports continuous 250 mA load current; pulsed rating extends to 560 mA for transient peaks.
CISS	110 pF max - Minimizes gate drive power and propagation delay in high-speed logic interfaces and analog switches.
td(ON)/tr/tf	5 ns / 15 ns / 8 ns - Enables >20 MHz switching in relay replacement and telecom multiplexing with minimal overlap loss.
TA Range	–55°C to +150°C - Qualified for automotive under-hood, industrial motor control, and outdoor photovoltaic environments.

Pinout & Package

3-lead SOT-89 (TO-243AA) package with exposed drain pad for thermal dissipation; JEDEC-compliant matte tin finish, RoHS-compliant (G suffix).

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	High-impedance MOS input; requires no steady-state current; sensitive to ESD (±20 V absolute max).
2 - Drain	Power output terminal	Connected to load and heat sink via exposed pad; carries full switched current and dissipates primary power loss.
3 - Source	Reference/return terminal	Common return path for gate drive and load current; establishes local ground reference for logic-level interfacing.

Key Features

Feature	Design Value
Low threshold voltage	V_GS(th) as low as 0.3 V ensures robust turn-on from 1.8 V microcontrollers and energy-harvesting sources.
Thermal stability	Positive R_DS(ON) temperature coefficient (0.75 %/°C) prevents current hogging in parallel configurations.
No secondary breakdown	Vertical DMOS architecture eliminates failure mode common in bipolar transistors under inductive loads.
Low leakage	IDSS ≤ 10 µA at V_DS = 18 V and IGSS ≤ 100 nA at ±15 V enables ultra-low standby power in battery systems.
Fast switching	Sub-20 ns rise/fall times support clean edge integrity in digital line drivers and telecom signal routing.

Applications

Solid-State Relays	Photovoltaic Drives
Use Scenario: Replacing electromechanical relays in PLC I/O modules and HVAC controllers where silent operation and long life are required. IC Role / Device Role / Timing Role: Main power switch controlling AC/DC load current; driven by optocoupled logic-level signals. Use Value: Eliminates contact wear and bounce; 150°C ambient rating allows mounting near heat-generating components without derating.	Use Scenario: Driving MOSFET gates in solar microinverters and DC optimizers using isolated gate drive signals from PV string controllers. IC Role / Device Role / Timing Role: High-side or low-side gate driver stage translating low-power control pulses into robust gate charge/discharge currents. Use Value: 110 pF C_ISS and 2.5 Ω R_DS(ON) minimize gate drive loss and switching transition time, improving inverter efficiency.
Battery-Operated Systems	Logic-Level Interfaces
Use Scenario: Power management in portable medical devices and wireless sensors requiring sub-µA sleep current and 3.3 V wake-up capability. IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystems (e.g., RF transceivers, ADCs) under MCU control. Use Value: 100 nA IGSS and 10 µA IDSS ensure <1 µA total leakage per switch, extending battery life in multi-year deployments.	Use Scenario: Level translation between 3.3 V FPGA I/O banks and 5 V legacy peripherals in industrial test equipment. IC Role / Device Role / Timing Role: Bidirectional analog/digital switch isolating signal paths while preserving logic thresholds. Use Value: 0.3 V typical V_GS(th) guarantees full enhancement at 3.3 V, avoiding marginal turn-on seen with higher-V_th MOSFETs.

Solid-State Relays

Photovoltaic Drives

Use Scenario: Replacing electromechanical relays in PLC I/O modules and HVAC controllers where silent operation and long life are required.

IC Role / Device Role / Timing Role: Main power switch controlling AC/DC load current; driven by optocoupled logic-level signals.

Use Value: Eliminates contact wear and bounce; 150°C ambient rating allows mounting near heat-generating components without derating.

Use Scenario: Driving MOSFET gates in solar microinverters and DC optimizers using isolated gate drive signals from PV string controllers.

IC Role / Device Role / Timing Role: High-side or low-side gate driver stage translating low-power control pulses into robust gate charge/discharge currents.

Use Value: 110 pF C_ISS and 2.5 Ω R_DS(ON) minimize gate drive loss and switching transition time, improving inverter efficiency.

Battery-Operated Systems

Logic-Level Interfaces

Use Scenario: Power management in portable medical devices and wireless sensors requiring sub-µA sleep current and 3.3 V wake-up capability.

IC Role / Device Role / Timing Role: Load switch enabling/disabling subsystems (e.g., RF transceivers, ADCs) under MCU control.

Use Value: 100 nA IGSS and 10 µA IDSS ensure <1 µA total leakage per switch, extending battery life in multi-year deployments.

Use Scenario: Level translation between 3.3 V FPGA I/O banks and 5 V legacy peripherals in industrial test equipment.

IC Role / Device Role / Timing Role: Bidirectional analog/digital switch isolating signal paths while preserving logic thresholds.

Use Value: 0.3 V typical V_GS(th) guarantees full enhancement at 3.3 V, avoiding marginal turn-on seen with higher-V_th MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DS-T1-E3	Lower BVDSS (20 V), higher R_DS(ON) (0.13 Ω @ 2.5 V), SOT-23 package (smaller footprint, lower power dissipation).	Better suited for compact, low-current (<1 A) logic switching; not rated for 150°C ambient or photovoltaic surge conditions.	Select when board space is critical and thermal load is ≤0.5 W; verify gate drive strength for 2.5 V logic.
DMN2004LK-7	Higher BVDSS (20 V), lower R_DS(ON) (0.085 Ω @ 4.5 V), but V_GS(th) min 1.0 V - incompatible with 1.8 V logic.	Optimized for 3.3/5 V systems with higher current demands; unsuitable for battery-powered 1.8 V MCU interfaces.	Choose for higher-efficiency 3.3 V line drivers where gate voltage ≥2.5 V is guaranteed; avoid in energy-harvesting nodes.

Compared with TN2501N8-G, Si2301DS-T1-E3 offers smaller size but reduced thermal margin and surge capability, while DMN2004LK-7 delivers lower conduction loss only at higher gate voltages - making TN2501N8-G uniquely balanced for 1.8–3.3 V logic-driven, thermally demanding, and reliability-critical switching.

Availability

TN2501N8-G is available at Aetrix Electronics and suitable for solid-state relays, photovoltaic drives, and battery-operated systems requiring stable component supply, extended temperature operation, and RoHS-compliant packaging.

Supply support for TN2501N8-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company specializing in microcontrollers, analog devices, and timing solutions, with design centers and manufacturing facilities across the Americas, Asia, and Europe.

TN2501N8-G belongs to Microchip's vertical DMOS FET product line, engineered for low-threshold, high-reliability switching in logic-level interface, solid-state relay, and energy-efficient power control applications.

FAQ

What is the maximum continuous drain current rating for TN2501N8-G at 25°C?

The TN2501N8-G is rated for 400 mA continuous drain current (I_D) at T_A = 25°C when mounted on a standard FR4 board (25 mm × 25 mm × 1.57 mm). This limit is set by junction temperature constraints, and derating applies above 25°C per the θ_JA = 133°C/W thermal resistance curve shown in Figure 2-5 of the datasheet.

Does TN2501N8-G support direct drive from a 1.8 V microcontroller GPIO?

Yes, TN2501N8-G supports direct drive from 1.8 V microcontrollers: its gate threshold voltage ranges from 0.3 V to 1.0 V, and it achieves 250 mA minimum on-state current at V_GS = 1.8 V (interpolated from Figure 2-8 transfer characteristics and Table 4-1 summary). Full enhancement is confirmed at 1.8 V across temperature.

What is the thermal resistance (θJA) of TN2501N8-G in its SOT-89 package?

The TN2501N8-G has a junction-to-ambient thermal resistance (θ_JA) of 133°C/W when mounted on a standard FR4 PCB (25 mm × 25 mm × 1.57 mm). This value is specified in the Thermal Characteristics table on page DS20005948A-page 2 and validated per JEDEC JESD51-2 standards.

Is TN2501N8-G suitable for use in photovoltaic (PV) applications with high dv/dt transients?

Yes, TN2501N8-G is suitable for PV applications: its vertical DMOS structure is free from secondary breakdown, and its 18 V BVDSS provides margin against typical PV string transient spikes. The 35 pF reverse transfer capacitance (C_RSS) minimizes gate disturbance during fast dv/dt events, as confirmed in Figure 2-9.

What is the gate-to-source voltage rating for TN2501N8-G?

The TN2501N8-G has a gate-to-source voltage rating of ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage; practical gate drive should be limited to ±15 V to maintain long-term reliability, especially at elevated temperatures.

TN2501N8-G Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 18 V

Current - Continuous Drain (Id) @ 25°C:: 400mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 3V

Rds On (Max) @ Id, Vgs:: 2.5Ohm @ 200mA, 3V

Vgs(th) (Max) @ Id:: 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 110 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-243AA (SOT-89)

TN2501N8-G FAQ

1.How can I place an order for TN2501N8-G through Aetrix?

Please submit a Request for Quotation (RFQ) for TN2501N8-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TN2501N8-G reliable?

The price and inventory of TN2501N8-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TN2501N8-G is usually 5 days.

3.What payment methods are accepted for TN2501N8-G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TN2501N8-G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TN2501N8-G?

TN2501N8-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TN2501N8-G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TN2501N8-G?

For technical support, including TN2501N8-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TN2501N8-G requirements.

6.How does Aetrix verify that TN2501N8-G is sourced from the original manufacturer or authorized distributors?

All TN2501N8-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TN2501N8-G meets industry standards.

7.What is the process for return or replacement of TN2501N8-G?

All TN2501N8-G units undergo pre-shipment inspection (PSI). If there is an issue with TN2501N8-G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TN2501N8-G part is unused and in its original packaging.

Return procedure for TN2501N8-G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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