Microchip Technology TN2540N3-G-P002

Overview

TN2540N3-G-P002 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, designed for logic-level switching with 2 V maximum gate threshold voltage, 400 V drain-to-source breakdown voltage, and 12 Ω maximum R_DS(ON) at V_GS = 10 V. It serves as a low-threshold power switch in solid-state relays and battery-operated systems.

For engineers reviewing the TN2540N3-G-P002 datasheet, TN2540N3-G-P002 pinout, TN2540N3-G-P002 application, or TN2540N3-G-P002 equivalent, key selection criteria include guaranteed sub-2 V V_GS(th), 125 pF max input capacitance, thermal stability up to +150°C ambient, and TO-92 compatibility for space-constrained analog and interface circuits.

Technical Context

This device employs a vertical DMOS structure with silicon-gate process to combine bipolar-like power handling with MOS advantages: high input impedance (>10¹² Ω), positive temperature coefficient for inherent current sharing, and immunity to secondary breakdown. Its gate drive requires only TTL/CMOS-compatible logic levels due to V_GS(th) ≤ 2 V.

DC operation supports continuous ID up to 175 mA (TO-92), with pulsed capability to 2 A; AC performance includes 15 ns rise time and 25 ns turn-off delay under 25 Ω gate drive. The integrated body diode enables bidirectional analog switching with 1.8 V forward drop at 200 mA.

Key Specifications

Pinout & Package

3-lead TO-92 package (Pb-free, RoHS-compliant) with axial leads; compact through-hole mounting suitable for prototyping and low-volume production. Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain (top view).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Compared with STP1NK60ZFP and DMG2302U-7, TN2540N3-G-P002 uniquely balances 400 V blocking, guaranteed ≤2 V threshold, and TO-92 form factor-making it the only option among the three qualified for logic-level switching in 24–48 V industrial and solar applications without gate boosting.

Availability

TN2540N3-G-P002 is available at Aetrix Electronics and suitable for solid-state relays, battery-operated systems, photovoltaic drives, and analog switches requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for TN2540N3-G-P002 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor manufacturer specializing in microcontrollers, analog devices, and power semiconductors with emphasis on reliability and long-term supply assurance.

The TN2540 belongs to Microchip's vertical DMOS FET product line, engineered specifically for logic-level switching in industrial, telecom, and energy infrastructure applications where low-threshold operation, high-voltage blocking, and thermal robustness are critical.

FAQ

What is the maximum gate-to-source voltage rating for TN2540N3-G-P002?

The absolute maximum gate-to-source voltage for TN2540N3-G-P002 is ±20 V. Exceeding this rating risks permanent gate oxide damage. In normal operation, gate drive should remain within –10 V to +15 V to ensure long-term reliability, especially under transient conditions. The device's low 2 V threshold means conservative gate drive design-such as clamping with a 12 V Zener-is recommended to avoid overstress while maintaining fast switching.

Can TN2540N3-G-P002 be used in analog signal switching applications?

Yes, TN2540N3-G-P002 is explicitly characterized for analog switching, with low 125 pF input capacitance, symmetrical body diode (V_SD = 1.8 V), and low 10 µA IDSS leakage. Its R_DS(ON) variation over temperature is predictable, supporting stable on-resistance in precision multiplexers. However, designers must limit V_DS to ≤25 V in analog mode to maintain linearity and avoid exceeding safe operating area limits defined in Figure 2-3 of the datasheet.

What is the thermal resistance junction-to-ambient for TN2540N3-G-P002?

The junction-to-ambient thermal resistance (θ_JA) for TN2540N3-G-P002 in its 3-lead TO-92 package is 132 °C/W, measured on a standard FR-5 board with no copper pour. This value assumes natural convection only; adding thermal relief pads or small copper areas can improve heat dissipation by 15–25%. For sustained 175 mA operation at +125°C ambient, derating to ≤0.5 W power dissipation is advised to maintain TJ < +150°C.

Does TN2540N3-G-P002 have built-in ESD protection?

TN2540N3-G-P002 does not integrate on-die ESD protection structures. Its gate oxide is susceptible to human-body-model (HBM) discharges above 2 kV. Therefore, external protection-such as a 10 kΩ series gate resistor and parallel 12 V Zener clamp to source-is mandatory in production PCB layouts. Handling during assembly requires strict adherence to ANSI/ESD S20.20 protocols, including grounded workstations and ionized air.

How does the gate threshold voltage of TN2540N3-G-P002 change with temperature?

TN2540N3-G-P002 exhibits a negative temperature coefficient for V_GS(th), decreasing by –2.5 to –4 mV/°C. At 125°C, V_GS(th) may drop ~0.4 V below its 25°C value-improving turn-on margin in hot environments but potentially increasing subthreshold conduction in high-impedance off-states. This behavior is fully characterized in Figure 2-11 and supports stable operation across –55°C to +150°C ambient without external compensation.