Microchip Technology TN2640N3-G

Overview

TN2640N3-G from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, featuring 400 V drain-to-source breakdown voltage, ≤2 V gate threshold voltage, and 5 Ω maximum R_DS(ON) at V_GS = 10 V - optimized for logic-level switching in battery-operated systems and solid-state relays.

For engineers reviewing the TN2640N3-G datasheet, TN2640N3-G pinout, TN2640N3-G application, or TN2640N3-G equivalent, key selection criteria include low-threshold drive compatibility with TTL/CMOS, thermal stability up to +150°C ambient, and verified diode reverse recovery time of 300 ns for photovoltaic drive and analog switch use cases.

Technical Context

This device uses a vertical DMOS structure with silicon-gate process to combine bipolar-like power handling with MOS advantages: high input impedance (>10¹² Ω), low input capacitance (210 pF typical), and immunity to thermal runaway and secondary breakdown.

Its gate threshold voltage (0.8–2.0 V) enables direct drive from 3.3 V or 5 V logic, while its 400 V BVDSS and 2 A continuous ID rating support robust operation in line drivers and telecom switches without external level-shifting circuitry.

Key Specifications

Pinout & Package

Package: 3-lead TO-92 (RoHS-compliant, Pb-free, 1000/Bag). Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain - compatible with legacy through-hole PCB layouts and manual prototyping.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold switching applications.

Compared with TN2640N3-G, IXTP01N400P demands higher gate voltage and larger footprint, while STP1NK60Z sacrifices current capacity for higher voltage margin - neither offers the precise 2 V threshold / 2 A / TO-92 combination validated for TTL/CMOS-driven battery and relay applications.

Availability

TN2640N3-G is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, logic-level interfaces, and photovoltaic drives requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TN2640N3-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and timing solutions, with global manufacturing and quality certifications including ISO 9001 and AEC-Q200.

TN2640N3-G belongs to Microchip's vertical DMOS FET product line, designed specifically for low-threshold, high-voltage switching in space-constrained, thermally demanding applications such as industrial controls and renewable energy systems.

FAQ

What is the maximum gate-to-source voltage rating for TN2640N3-G?

The absolute maximum gate-to-source voltage (V_GS) for TN2640N3-G is ±20 V. Exceeding this rating risks permanent gate oxide damage. In normal operation, gate drive should be limited to 10 V for optimal R_DS(ON) and reliability. The TN2640N3-G datasheet specifies that V_GS = 10 V delivers 2 A minimum ID(ON) and 3–5 Ω R_DS(ON), making it the recommended operating point for most designs.

Can TN2640N3-G be used in high-frequency switching applications above 100 kHz?

Yes, TN2640N3-G supports high-frequency operation with 15 ns rise time and 27 ns fall time (at V_DD = 25 V, I_D = 2 A, R_GEN = 25 Ω). Its 225 pF input capacitance and 2.5 nC typical gate charge enable efficient 200 kHz PWM in DC-DC line drivers. However, thermal limits in the TO-92 package constrain sustained high-frequency use to <500 mW average power - verify junction temperature using θ_JA = 132°C/W per the TN2640N3-G datasheet.

Is TN2640N3-G suitable for driving inductive loads like solenoids or relays?

Yes, TN2640N3-G is explicitly characterized for inductive switching and is free from secondary breakdown - a critical failure mode in bipolar transistors under inductive stress. Its body diode has 300 ns reverse recovery time and 0.9 V forward drop, supporting flyback energy dissipation. For solenoid drive, ensure external clamping (e.g., TVS or RC snubber) is used per the TN2640N3-G application guidelines to limit V_DS overshoot during turn-off.

What is the thermal resistance (θJA) of TN2640N3-G in its TO-92 package?

The junction-to-ambient thermal resistance (θ_JA) for TN2640N3-G in the 3-lead TO-92 package is 132°C/W, measured on a standard FR-4 board (25 mm × 25 mm × 1.57 mm). This value defines the worst-case temperature rise per watt of power dissipation at the die. At 2 A ID and 5 Ω R_DS(ON), power dissipation reaches 20 W - exceeding the TO-92's 0.74 W continuous rating - so TN2640N3-G must be operated within its specified 220 mA continuous/2 A pulsed limits to avoid thermal runaway.

Does TN2640N3-G have a built-in body diode, and what are its specifications?

Yes, TN2640N3-G integrates a parasitic body diode inherent to its vertical DMOS structure. Its diode forward voltage (V_SD) is ≤0.9 V at I_SD = 200 mA and V_GS = 0 V, and reverse recovery time (t_rr) is 300 ns under the same conditions. This diode enables bidirectional conduction in analog switch and photovoltaic drive applications but is not rated for continuous forward conduction - always refer to the TN2640N3-G datasheet's diode parameter table for safe operating limits.