Microchip Technology TN5325N3-G-P002

Overview

TN5325N3-G-P002 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, featuring a maximum gate threshold voltage of 2 V, 250 V drain-to-source breakdown voltage, and 7 Ω R_DS(ON) at V_GS = 10 V - optimized for logic-level switching in battery-operated systems and solid-state relays.

For engineers reviewing the TN5325N3-G-P002 datasheet, TN5325N3-G-P002 pinout, TN5325N3-G-P002 application, or TN5325N3-G-P002 equivalent, key selection criteria include low-threshold drive compatibility with TTL/CMOS, thermal stability across –55°C to +150°C ambient, and verified diode reverse recovery time of 300 ns for photovoltaic drive circuits.

Technical Context

This device employs a vertical DMOS structure with silicon gate process, delivering bipolar-like power handling while retaining MOS advantages: high input impedance (>10¹² Ω), positive temperature coefficient for inherent current sharing, and immunity to secondary breakdown and thermal runaway.

Its low C_ISS (110 pF) and fast switching metrics - 20 ns turn-on delay, 15 ns rise time, 25 ns turn-off delay, and 25 ns fall time - are specified at V_DD = 25 V, I_D = 150 mA, and R_GEN = 25 Ω, enabling efficient operation in line drivers and telecom switches without external gate drivers.

Key Specifications

Pinout & Package

3-lead TO-92 package (JEDEC TO-92 variant), through-hole mounting, 1000-unit bag packaging per standard N3 suffix; thermal resistance θ_JA = 170°C/W on FR-5 board.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Compared with DMN2004LK3-7 and IRF520NPBF, the TN5325N3-G-P002 uniquely balances 250 V blocking, 2 V max threshold, and TO-92 through-hole compatibility - making it the only option among the three for cost-sensitive, high-voltage, logic-level–driven relay and PV bypass designs without PCB redesign.

Availability

TN5325N3-G-P002 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relays, and photovoltaic drives requiring stable component supply, long-lifecycle assurance, and RoHS-compliant lead-free packaging.

Supply support for TN5325N3-G-P002 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power semiconductors, with ISO/TS-16949 certified manufacturing facilities.

The TN5325 product line delivers robust, low-threshold vertical DMOS FETs engineered for logic-compatible switching in harsh-environment applications including industrial controls, renewable energy interfaces, and telecom infrastructure.

FAQ

What is the maximum gate-to-source voltage rating for TN5325N3-G-P002?

The absolute maximum gate-to-source voltage for TN5325N3-G-P002 is ±20 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be clamped within –12 V to +15 V using Zener diodes or integrated gate protection circuits, especially in noisy industrial environments where transient coupling may occur. This rating is confirmed in Section 1.0 of the DS20005709A datasheet.

Can TN5325N3-G-P002 be used in avalanche mode?

No, TN5325N3-G-P002 is not rated for repetitive avalanche operation. Its datasheet does not specify avalanche energy (E_AS) or single-pulse avalanche ratings. The device relies on external snubbers or clamping circuits to limit V_DS during inductive switching. Using TN5325N3-G-P002 without such protection in flyback or relay-coil drive applications may result in premature failure due to unclamped inductive kick.

What is the thermal resistance junction-to-ambient for TN5325N3-G-P002 in its TO-92 package?

The junction-to-ambient thermal resistance (θ_JA) for TN5325N3-G-P002 in the 3-lead TO-92 package is 170°C/W when mounted on a standard FR-5 board. This value assumes no copper pour or heatsinking; adding 1 in² of 2-oz copper directly under the tab reduces θ_JA to approximately 95°C/W. Derating curves in Figure 1-1 of DS20005709A confirm 0.74 W maximum power dissipation at 25°C ambient.

Does TN5325N3-G-P002 have a specified reverse recovery time for its intrinsic body diode?

Yes, TN5325N3-G-P002 specifies a reverse recovery time (t_rr) of 300 ns typical at V_GS = 0 V, I_SD = 200 mA, and T_A = 25°C. This parameter is measured under defined diode forward conduction and subsequent reverse-biased commutation, confirming suitability for moderate-frequency freewheeling and photovoltaic bypass applications where fast diode recovery minimizes switching loss.

Is TN5325N3-G-P002 pin-compatible with other TO-92 packaged MOSFETs like the 2N7000?

No, TN5325N3-G-P002 is not pin-compatible with the 2N7000. While both use TO-92 packages, TN5325N3-G-P002 has Source–Gate–Drain pinout (Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain), whereas the 2N7000 uses Gate–Drain–Source (Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source). Swapping them without PCB modification will result in incorrect biasing and immediate device failure.