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Microchip Technology TP2435N8-G
- Part No.:
- TP2435N8-G
- Manufacturer:
- Microchip Technology
- Category:
- FETs, MOSFETs
- Package:
- TO-243AA
- Datasheet:
-
TP2435N8-G.pdf
- Description:
- MOSFET P-CH 350V 231MA TO243AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,903
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Product details
Overview
TP2435N8-G from Microchip Technology is a P-channel enhancement-mode vertical DMOS FET in a 3-lead SOT-89 (TO-243AA) package, rated for –350 V drain-to-source breakdown voltage, –2.4 V maximum gate threshold voltage, and 15 Ω maximum RDS(ON) at VGS = –10 V. It delivers low-threshold switching for logic-level TTL/CMOS interfaces and solid-state relay applications requiring high input impedance and fast turn-off.
For engineers reviewing the TP2435N8-G datasheet, TP2435N8-G pinout, TP2435N8-G application, or TP2435N8-G equivalent, this device is selected for high-voltage, low-current switching where thermal stability, absence of secondary breakdown, and sub-2.4 V gate drive compatibility are critical design requirements.
Technical Context
This device employs a vertical DMOS structure with silicon gate process to combine bipolar-like power handling with MOS advantages: positive temperature coefficient, no thermal runaway, and immunity to secondary breakdown. Its gate threshold voltage (–1 V to –2.4 V) enables direct drive from 3.3 V or 5 V logic without level shifting.
AC performance includes 125 mmho forward transconductance, 200 pF input capacitance, and nanosecond-scale switching (td(ON) ≤ 15 ns, tf ≤ 50 ns) under 25 Ω gate drive. The integrated body diode supports analog switch and linear amplifier use with –1.5 V VSD and 300 ns reverse recovery time.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | –350 V - supports high-side switching in industrial power supplies up to 300 V DC bus |
| VGS(th) | –1 to –2.4 V - ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO |
| RDS(ON) | 15 Ω max at VGS = –10 V - limits conduction loss to <150 mW at 100 mA load current |
| ID(ON) | –0.8 A at VGS = –10 V - suitable for low-power solid-state relays and signal routing |
| CISS | 200 pF - minimizes gate drive power and enables >1 MHz switching in PWM control |
| trr | 300 ns - allows bidirectional analog switching without significant charge injection |
| θJA | 133 °C/W - requires minimal heatsinking on FR5 board for continuous 1.6 W dissipation |
Pinout & Package
TP2435N8-G uses a 3-lead SOT-89 (TO-243AA) package with exposed drain tab for thermal conduction. Pin 1 is Gate, Pins 2 and 4 are Drain (internally connected), and Pin 3 is Source - enabling compact high-voltage layout with single-point drain grounding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | High-impedance MOS input requiring <100 nA leakage; drives with standard logic levels |
| 2 & 4 (Drain) | High-voltage power terminal | Internally bonded together; connects to –350 V rail and serves as thermal pad for PCB heat sinking |
| 3 (Source) | Reference terminal | Common return path for load current; referenced to system ground in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Low threshold voltage | –2.4 V max enables direct interface with 3.3 V/5 V logic without external level shifters |
| No secondary breakdown | Vertical DMOS structure eliminates safe operating area (SOA) limitations common in bipolar transistors |
| Positive temperature coefficient | RDS(ON) increases with temperature, enabling inherent current sharing in parallel configurations |
| Low input capacitance | 200 pF CISS reduces gate drive power and improves high-frequency switching efficiency |
| Free from thermal runaway | Self-limiting behavior prevents destructive latch-up during overload or ambient temperature rise |
Applications
| Logic-Level Solid-State Relay | Analog Signal Switching |
|---|---|
Use Scenario: Replacing electromechanical relays in PLC I/O modules for 24–250 V AC/DC load control. IC Role / Device Role / Timing Role: High-side P-channel switch controlling load current with TTL/CMOS-compatible gate drive. Use Value: Eliminates contact wear and bounce; achieves <50 ns switching vs. 10 ms mechanical relay response. | Use Scenario: Multiplexing sensor signals in data acquisition systems with ±15 V analog rails. IC Role / Device Role / Timing Role: Bidirectional analog switch leveraging low RDS(ON) and fast trr for minimal signal distortion. Use Value: Maintains <0.1% gain error across –10 V to +10 V signal range due to flat RDS(ON) vs. VDS. |
| Linear Amplifier Stage | Telecom Line Interface |
Use Scenario: Low-noise preamplifier in medical instrumentation requiring high input impedance and low leakage. IC Role / Device Role / Timing Role: Common-source amplifier biased in saturation region with stable transconductance. Use Value: 125 mmho GFS and <10 μA IDSS ensure predictable small-signal gain and DC offset stability. | Use Scenario: Ringing generator and off-hook detection in VoIP gateway line cards. IC Role / Device Role / Timing Role: High-voltage switch isolating ringing AC (–90 V peak) from low-voltage controller circuitry. Use Value: –350 V BVDSS withstands telecom surge standards (GR-1089) without clamping components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP30P085P | –85 V BVDSS, 0.085 Ω RDS(ON), TO-220 package | Higher current, lower voltage - suited for 12–48 V power management, not 250+ V telecom | Select when higher ID(ON) (>30 A) and lower RDS(ON) are required at <100 V operation |
| STP36PF55 | –550 V BVDSS, 0.55 Ω RDS(ON), TO-220 package | Higher voltage rating but 37× higher RDS(ON) - better for ultra-high-voltage, low-speed switching | Select when >400 V blocking is mandatory and 500 mA load current is acceptable |
Compared with IXTP30P085P and STP36PF55, TP2435N8-G uniquely balances –350 V capability, –2.4 V logic-level drive, and 15 Ω RDS(ON) in SOT-89 - making it optimal for space-constrained, medium-voltage, low-power switching where gate drive simplicity and thermal density matter.
Availability
TP2435N8-G is available at Aetrix Electronics and suitable for logic-level solid-state relays, analog multiplexers, linear amplifier stages, and telecom line interfaces requiring stable component supply across industrial and communications equipment lifecycles.
Supply support for TP2435N8-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and timing solutions, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.
The TP2435N8-G belongs to Microchip's vertical DMOS FET product line, engineered for high-reliability switching and amplification in harsh environments where thermal stability, high breakdown voltage, and logic-level compatibility are essential.
FAQ
What is the maximum gate-to-source voltage rating for TP2435N8-G?
The TP2435N8-G has a gate-to-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. This specification allows robust drive circuit design with margin above the –10 V VGS used for full enhancement, and accommodates transient coupling in noisy industrial environments without requiring additional clamping.
Does TP2435N8-G require a gate resistor for safe operation?
Yes, TP2435N8-G benefits from an external gate resistor (typically 10–100 Ω) to control dV/dt and prevent oscillation during switching. The datasheet specifies RGEN = 25 Ω for AC characterization, and omitting this resistor can cause ringing, EMI, or false triggering due to its 200 pF input capacitance interacting with PCB trace inductance.
Can TP2435N8-G be used in linear amplifier configurations?
Yes, TP2435N8-G is explicitly qualified for linear amplifier use per its General Description and Applications list. Its 125 mmho forward transconductance, low input/output leakage (<100 nA IGSS, <10 μA IDSS), and stable saturation characteristics enable precision analog gain stages - particularly in high-input-impedance, low-distortion designs where thermal runaway must be avoided.
What is the thermal resistance junction-to-ambient for TP2435N8-G?
The TP2435N8-G has a junction-to-ambient thermal resistance (θJA) of 133 °C/W when mounted on a 25 mm × 25 mm × 1.57 mm FR5 board. This value assumes standard SOT-89 footprint and no added copper pour; adding thermal vias or a 100 mm² copper pad reduces θJA significantly and is recommended for continuous >500 mW operation.
Is TP2435N8-G RoHS-compliant and lead-free?
Yes, TP2435N8-G is RoHS-compliant and lead-free, as indicated by the "G" suffix in its part number and confirmed in Section 5.1 of the datasheet. The package uses matte tin (Sn) plating per JEDEC standards, and the outer packaging carries the Pb-free JEDEC designator symbol, meeting EU Directive 2011/65/EU requirements.
TP2435N8-G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 350 V
- Current - Continuous Drain (Id) @ 25°C:
- 231mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 3V, 10V
- Rds On (Max) @ Id, Vgs:
- 15Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-243AA (SOT-89)
TP2435N8-G FAQ
1.How can I place an order for TP2435N8-G through Aetrix?
Please submit a Request for Quotation (RFQ) for TP2435N8-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TP2435N8-G reliable?
The price and inventory of TP2435N8-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TP2435N8-G is usually 5 days.
3.What payment methods are accepted for TP2435N8-G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TP2435N8-G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TP2435N8-G?
TP2435N8-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TP2435N8-G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TP2435N8-G?
For technical support, including TP2435N8-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TP2435N8-G requirements.
6.How does Aetrix verify that TP2435N8-G is sourced from the original manufacturer or authorized distributors?
All TP2435N8-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TP2435N8-G meets industry standards.
7.What is the process for return or replacement of TP2435N8-G?
All TP2435N8-G units undergo pre-shipment inspection (PSI). If there is an issue with TP2435N8-G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TP2435N8-G part is unused and in its original packaging.
Return procedure for TP2435N8-G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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