Microchip Technology TP2520N8-G

Overview

TP2520N8-G from Microchip Technology is a P-channel enhancement-mode vertical DMOS FET designed for low-threshold logic-level switching in battery-operated and photovoltaic systems. It features –2.4 V maximum gate threshold voltage, 15 Ω maximum R_DS(ON) at –4.5 V_GS, –200 V drain-to-source breakdown voltage, and 125 pF maximum input capacitance - enabling direct TTL/CMOS drive with fast turn-on/off times (≤10 ns td(ON), ≤20 ns td(OFF)).

For engineers reviewing the TP2520N8-G datasheet, TP2520N8-G pinout, TP2520N8-G application, or TP2520N8-G equivalent, this device is selected for high-input-impedance, thermally robust switching where low V_GS(th), absence of secondary breakdown, and stable operation across –55°C to +150°C ambient are critical.

Technical Context

The TP2520N8-G employs a vertical DMOS structure with silicon-gate process, delivering bipolar-like power handling while retaining MOS advantages: positive temperature coefficient of R_DS(ON), no thermal runaway, and immunity to secondary breakdown. Its gate threshold is specified down to –2.4 V with tight ΔV_GS(th) drift (≤4.5 mV/°C) and low leakage (≤–100 nA IGSS).

AC performance is characterized by CISS = 75–125 pF, COSS = 20–85 pF, CRSS = 10–35 pF at V_DS = –25 V, f = 1 MHz, and switching times validated under pulsed conditions (300 µs, 2% duty cycle) with R_GEN = 25 Ω - confirming suitability for high-speed line drivers and solid-state relay control.

Key Specifications

Pinout & Package

TP2520N8-G is housed in a 3-lead SOT-89 (TO-243AA) package with exposed drain pad for thermal conduction. Pin 1 is Gate, Pins 2 and 4 are internally connected Drain terminals, and Pin 3 is Source - supporting high-current drain routing and simplified PCB layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with Si2301DDS-T1-GE3 and IRF9540NPBF, TP2520N8-G uniquely balances –200 V ruggedness, –2.4 V logic compatibility, and SOT-89 thermal performance - making it optimal for mid-voltage (48–100 V) photovoltaic and telecom switching where gate drive simplicity and reliability are prioritized over ultra-low R_DS(ON).

Availability

TP2520N8-G is available at Aetrix Electronics and suitable for photovoltaic drives, solid-state relays, and logic-level interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TP2520N8-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power semiconductors, with a focus on embedded control and industrial reliability.

The TP2520N8-G belongs to Microchip's vertical DMOS FET product line, engineered for high-voltage, low-threshold switching in battery-powered, telecom, and energy infrastructure applications where thermal stability and gate drive simplicity are essential.

FAQ

What is the maximum gate-to-source voltage rating for TP2520N8-G?

The TP2520N8-G has a gate-to-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this voltage - even momentarily - risks permanent gate oxide damage. This rating applies across the full operating temperature range (–55°C to +150°C) and must be respected in all drive circuit designs, including transient protection schemes. The TP2520N8-G datasheet confirms this value on page 2 under "Absolute Maximum Ratings."

Does TP2520N8-G have built-in ESD protection on the gate?

The TP2520N8-G does not include integrated gate ESD protection diodes per its datasheet; it relies on external design safeguards. The device specifies IGSS ≤ –100 nA at ±20 V, indicating a pure MOS gate structure without clamping elements. System-level ESD protection - such as series gate resistors and TVS diodes - is required when used in handling-sensitive or field-deployed applications. This behavior is consistent with Microchip's vertical DMOS FET family architecture.

Can TP2520N8-G be used in linear (analog) mode, not just switching?

Yes, TP2520N8-G supports linear operation, as confirmed by its saturation characteristics curves (Figure 2-4), transfer characteristics (Figure 2-8), and specified GFS = 100–250 mmho. Its positive temperature coefficient of R_DS(ON) and freedom from secondary breakdown make it inherently stable in analog regulator or current-source configurations - unlike many bipolar or lateral MOSFETs. However, power dissipation must remain within the SOA envelope shown in Figure 2-3.

What is the thermal resistance from junction to ambient (θ_JA) for TP2520N8-G in its SOT-89 package?

The TP2520N8-G has a θ_JA of 133 °C/W when mounted on a standard FR5 board measuring 25 mm × 25 mm × 1.57 mm, as stated in the Thermal Characteristics section (page 3). This value assumes no additional copper pour or heatsinking. For higher-power operation, designers should refer to the SOA curve (Figure 2-3) and consider thermal vias under the drain pad to improve heat transfer to internal layers.

Is TP2520N8-G RoHS-compliant and lead-free?

Yes, TP2520N8-G is RoHS-compliant and lead-free, as indicated by the "G" suffix in its part number and explicitly stated in the Packaging Information section (page 8): "This package is Pb-free. The Pb-free JEDEC designator (3e) can be found on the outer packaging." The device meets J-STD-609 Category 3 marking requirements and uses matte tin (Sn) termination finish per JEDEC standards.