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Microchip Technology TP2635N3-G
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- Part No.:
- TP2635N3-G
- Manufacturer:
- Microchip Technology
- Category:
- FETs, MOSFETs
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
TP2635N3-G.pdf
- Description:
- MOSFET P-CH 350V 180MA TO92-3
- Quantity:
- Payment:
- Shipping:
Inventory:344
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Product details
Overview
TP2635N3-G from Microchip Technology is a P-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for –350 V drain-to-source breakdown voltage, –2 V maximum gate threshold voltage, and 15 Ω maximum on-resistance at VGS = –10 V. It delivers low input capacitance (300 pF), fast switching (10 ns turn-on delay), and operates across –55°C to +150°C ambient, ideal for logic-level interfacing in solid-state relays and photovoltaic drives.
For engineers reviewing the TP2635N3-G datasheet, TP2635N3-G pinout, TP2635N3-G application, or TP2635N3-G equivalent, this device serves as a low-threshold, thermally robust discrete power switch with verified performance in battery-operated systems, analog switching, and telecom line drivers where high input impedance and absence of secondary breakdown are critical selection criteria.
Technical Context
The TP2635N3-G employs a vertical DMOS structure with silicon gate process, combining bipolar-like power handling with MOS-like positive temperature coefficient and immunity to thermal runaway. Its gate threshold voltage (–0.8 V to –2 V) enables direct TTL/CMOS drive without level shifting, while its –350 V BVDSS rating supports high-voltage DC switching in industrial control and PV string isolation.
It features intrinsic body diode operation (VSD = 1.8 V at –200 mA), characterized reverse recovery time (300 ns), and stable RDS(ON) drift (0.75 %/°C), making it suitable for unidirectional blocking applications requiring predictable conduction loss over temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | –350 V - Withstands up to 350 V reverse drain-source voltage before avalanche, enabling use in high-voltage DC bus switching. |
| VGS(th) | –0.8 to –2 V - Ensures reliable turn-on with standard logic-level outputs (e.g., 0 V / –5 V), eliminating need for gate driver boost stages. |
| RDS(ON) | 11–15 Ω - Delivers ≤15 Ω on-resistance at –10 V gate drive, supporting ≥300 mA continuous conduction with low I²R loss. |
| CISS | 300 pF - Low input capacitance minimizes gate drive energy and improves switching efficiency in high-frequency PWM circuits. |
| td(ON)/tf | 10 ns / 40 ns - Fast turn-on and fall times enable operation above 1 MHz in low-duty-cycle switching applications. |
| TA Range | –55°C to +150°C - Fully specified operation across extended industrial and automotive under-hood temperature ranges. |
| PD @ 25°C | 1 W - Power dissipation limit in TO-92 package defines thermal design boundary for PCB copper area and heatsinking requirements. |
Pinout & Package
TP2635N3-G uses a 3-lead TO-92 package with standard lead configuration (top view): Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain. The package is Pb-free/RoHS-compliant (G suffix), marked "TP2635 N3 e3" with year/week traceability code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Reference node for gate control and current return path | Connected to system ground or negative rail; sets VGS reference and carries full load current back to supply. |
| 2 (Gate) | Control terminal for channel conduction | High-impedance input requiring minimal drive current; threshold defined at –1 mA ID, enabling direct microcontroller interface. |
| 3 (Drain) | High-voltage output terminal | Handles –350 V blocking and load current; electrically isolated from source by depletion region, used for high-side or low-side switching topologies. |
Key Features
| Feature | Design Value |
|---|---|
| –2 V max low threshold | Enables direct drive from 3.3 V or 5 V logic without external level shifters or charge pumps. |
| Free from secondary breakdown | Eliminates need for SOA derating in linear or pulsed high-voltage operation, simplifying reliability analysis. |
| Low input capacitance (300 pF) | Reduces gate drive power and propagation delay in high-speed switching, improving system efficiency. |
| Thermally induced failure immunity | Positive temperature coefficient prevents thermal runaway during overload, enhancing fault tolerance in unregulated loads. |
| Low leakage (≤1 µA IDSS) | Ensures minimal standby current in battery-powered systems and maintains signal integrity in analog switch configurations. |
Applications
| Solid State Relays | Photovoltaic Drives |
|---|---|
Use Scenario: Replacing electromechanical relays in industrial PLC I/O modules and HVAC controllers requiring silent, bounce-free switching. IC Role / Device Role / Timing Role: High-voltage P-channel switch controlling AC/DC load paths; operates in static on/off mode with no timing-critical transitions. Use Value: Eliminates contact wear and EMI from arcing, while –350 V BVDSS safely isolates 277 VAC lines with margin. |
Use Scenario: Isolating individual solar panel strings in rapid shutdown systems per NEC 690.12(B)(2). IC Role / Device Role / Timing Role: DC-blocking switch activated by control signal to disconnect PV string from inverter during fault conditions. Use Value: –2 V VGS(th) allows direct interface with low-power microcontrollers; low leakage (<1 µA) preserves open-circuit voltage during standby. |
| Analog Switches | Telecommunication Switches |
Use Scenario: Multiplexing audio or sensor signals in portable medical devices and test equipment with rail-to-rail analog range. IC Role / Device Role / Timing Role: Bidirectional analog pass element leveraging intrinsic body diode and low RDS(ON) for minimal signal distortion. Use Value: 11–15 Ω RDS(ON) ensures <0.1% gain error in 1 kΩ source/load impedance networks at mid-scale voltages. |
Use Scenario: Line card protection and signal routing in legacy TDM-based PBX and central office switching systems. IC Role / Device Role / Timing Role: High-voltage analog switch managing tip/ring polarity reversal and loop supervision signals. Use Value: 300 pF CISS and 12 pF CRSS minimize crosstalk and capacitive loading on 2-wire subscriber loops operating up to 20 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP20N50P | 500 V BVDSS, 0.32 Ω RDS(ON), TO-220 package, higher gate charge (60 nC) | Designed for higher-current (>1 A), lower-voltage (<400 V) SMPS primary side switching | Choose when higher current capacity and lower on-resistance outweigh TO-92 form factor and logic-level drive needs. |
| IRF9540NPBF | –100 V BVDSS, –4 V VGS(th), 0.2 Ω RDS(ON), TO-220, higher leakage (25 µA IDSS) | Optimized for medium-voltage, high-current linear/switching regulators and motor drivers | Prefer when system voltage ≤100 V and gate drive can accommodate –4 V threshold; avoid for >200 V or ultra-low-leakage designs. |
Compared with IXTP20N50P and IRF9540NPBF, TP2635N3-G uniquely balances –350 V capability, logic-level gate drive, TO-92 compactness, and sub-µA leakage-making it irreplaceable in space-constrained, high-voltage, low-power analog and relay-replacement roles where thermal runaway immunity is mandatory.
Availability
TP2635N3-G is available at Aetrix Electronics and suitable for solid-state relays, photovoltaic rapid shutdown systems, and analog multiplexing applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for TP2635N3-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power management ICs, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.
The TP2635N3-G belongs to Microchip's vertical DMOS FET product line, engineered for high-voltage switching applications demanding ruggedness, thermal stability, and logic-compatible gate drive-particularly in industrial controls, renewable energy interfaces, and telecom infrastructure.
FAQ
What is the maximum gate-to-source voltage rating for TP2635N3-G?
The TP2635N3-G has a gate-to-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. This rating allows safe operation with standard logic-level drive circuits and transient-suppressed gate control, and is explicitly defined in the Absolute Maximum Ratings table of the DS20005796A datasheet.
Does TP2635N3-G include an integrated body diode, and what are its characteristics?
Yes, TP2635N3-G features an intrinsic body diode with a forward voltage drop (VSD) of 1.8 V at –200 mA and reverse recovery time (trr) of 300 ns. These values are measured under specified conditions (VGS = 0 V, IDS = –200 mA) and confirm suitability for freewheeling and bidirectional analog switching where controlled reverse conduction is required.
Can TP2635N3-G be used in linear (analog) amplification mode?
No, TP2635N3-G is not characterized or guaranteed for linear amplification. Its datasheet specifies only switching parameters (e.g., RDS(ON), td(ON), QG) and safe operating area curves for pulsed and DC switching. The device lacks small-signal gain (gm) linearity data or thermal stability guarantees required for analog amplifier use.
What is the thermal resistance junction-to-ambient (θJA) for TP2635N3-G in its TO-92 package?
The TP2635N3-G has a junction-to-ambient thermal resistance (θJA) of 132°C/W in the 3-lead TO-92 package, as stated in the Thermal Characteristics section of DS20005796A. This value assumes standard PCB mounting on FR-4 with no added copper pour; actual thermal performance improves with enhanced heatsinking or thermal vias.
Is TP2635N3-G suitable for automotive under-hood applications?
TP2635N3-G supports an operating ambient temperature range of –55°C to +150°C, meeting under-hood thermal requirements. However, it is not AEC-Q101 qualified, and Microchip does not specify automotive-grade screening, stress testing, or failure rate data for TP2635N3-G. For production automotive use, formal qualification evidence must be obtained separately.
TP2635N3-G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bag
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 350 V
- Current - Continuous Drain (Id) @ 25°C:
- 180mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
TP2635N3-G FAQ
1.How can I place an order for TP2635N3-G through Aetrix?
Please submit a Request for Quotation (RFQ) for TP2635N3-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TP2635N3-G reliable?
The price and inventory of TP2635N3-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TP2635N3-G is usually 5 days.
3.What payment methods are accepted for TP2635N3-G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TP2635N3-G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TP2635N3-G?
TP2635N3-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TP2635N3-G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TP2635N3-G?
For technical support, including TP2635N3-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TP2635N3-G requirements.
6.How does Aetrix verify that TP2635N3-G is sourced from the original manufacturer or authorized distributors?
All TP2635N3-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TP2635N3-G meets industry standards.
7.What is the process for return or replacement of TP2635N3-G?
All TP2635N3-G units undergo pre-shipment inspection (PSI). If there is an issue with TP2635N3-G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TP2635N3-G part is unused and in its original packaging.
Return procedure for TP2635N3-G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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