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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TP89R103NL,LQ

Name: TP89R103NL,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TP89R103NL,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TP89R103NL,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: TP89R103NL,LQ.pdf

Description:: MOSFET N CH 30V 15A 8SOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TP89R103NL from Toshiba is a silicon N-channel MOSFET in the U-MOSⅧ-H series, designed as a high-efficiency power switch in synchronous buck converters. It delivers R_DS(ON) = 10.4 mΩ (typ.) at V_GS = 4.5 V, Q_SW = 2.5 nC (typ.), and supports 15 A DC drain current with 30 V V_DSS, enabling compact, high-frequency DC-DC regulator designs.

For engineers reviewing the TP89R103NL datasheet, TP89R103NL pinout, TP89R103NL application, or TP89R103NL equivalent, this page provides verified electrical parameters, SOP-8 terminal mapping, thermal resistance data, gate charge characteristics, and validated alternative MOSFETs for switching regulator redesigns.

Technical Context

This device uses Toshiba's U-MOSⅧ-H trench-gate process to optimize conduction and switching losses simultaneously. Its enhancement-mode threshold (V_th = 1.3–2.3 V) ensures reliable turn-on with standard 3.3 V/5 V logic-level gate drivers, while low Crss (21 pF typ.) and fast tr/toff (2.3 ns / 14 ns typ.) support >1 MHz operation.

The SOP-8 package integrates four parallel drain terminals (pins 5–8) and triple-source configuration (pins 1–3), reducing source inductance and improving current sharing in high-di/dt applications. Thermal design must respect R_th(ch-a) = 65.7 °C/W (mounted on glass-epoxy board a) and T_ch ≤ 150 °C absolute limit.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input bus systems and automotive 12 V/24 V rails.
R_DS(ON) @ 4.5 V	10.4 mΩ (typ.) - Enables <1 W conduction loss at 10 A, critical for thermally constrained point-of-load regulators.
Q_SW	2.5 nC (typ.) - Low gate switch charge minimizes driver power and enables efficient 500 kHz–2 MHz switching without excessive gate drive loss.
I_D (DC)	15 A - Sustained current capability sufficient for mid-power DC-DC stages up to ~300 W with proper heatsinking.
C_iss	630 pF (typ.) - Input capacitance value used to calculate required gate driver slew rate and loop stability margins.
V_th	1.3–2.3 V - Logic-compatible threshold allowing direct drive from microcontroller GPIO or PWM controller outputs.
E_AS	28 mJ - Single-pulse avalanche energy rating supporting robustness against inductive switching transients in non-clamped topologies.

Pinout & Package

SOP-8 package (Toshiba designation: 2-5R1S), surface-mount, 0.085 g typical weight, RoHS-compliant marking. Pin 1–3 are internally connected source terminals; pins 5–8 are internally connected drain terminals - enabling low-inductance, high-current PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node; triple-terminal layout reduces source inductance and improves switching waveform fidelity.
4	Gate	Control input; requires low-impedance gate driver path to minimize ringing and ensure clean turn-on/turn-off transitions.
5, 6, 7, 8	Drain	Power output node; quad-terminal drain connection lowers effective package resistance and thermal impedance to PCB copper.

Key Features

Feature	Design Value
U-MOSⅧ-H trench structure	Optimized cell pitch and gate oxide thickness reduce both R_DS(ON) and Q_g simultaneously-enabling higher efficiency at high frequency.
Low Q_SW (2.5 nC)	Reduces gate driver power dissipation and allows use of smaller, lower-cost drivers in space-constrained applications.
Triple-source, quad-drain SOP-8	Minimizes parasitic source inductance and improves current sharing-critical for stable high-di/dt operation in synchronous rectifiers.
Enhancement-mode V_th range	Guarantees turn-on with 3.3 V logic while preventing accidental turn-on due to noise-no external level-shifting required.
150 °C channel temperature limit	Supports operation in high-ambient environments (e.g., industrial enclosures) when combined with appropriate derating per Toshiba Reliability Handbook.

Applications

Server VRM	Automotive ADAS Power Supply
Use Scenario: High-density 12 V → 1 V/30 A CPU core voltage regulator in enterprise servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter topology. Use Value: 10.4 mΩ R_DS(ON) at 4.5 V enables >92% efficiency at full load without active cooling, reducing thermal footprint.	Use Scenario: 12 V → 3.3 V/5 V power supply for radar ECU and camera modules in ADAS domain controllers. IC Role / Device Role / Timing Role: Primary switching FET in isolated or non-isolated DC-DC converter meeting AEC-Q101 stress requirements. Use Value: Low Q_SW and fast switching support >1 MHz operation, shrinking filter size and improving transient response to dynamic sensor loads.
Industrial PLC I/O Module	5G Base Station PSU
Use Scenario: Compact 24 V → 5 V/10 A auxiliary supply powering digital I/O and communication interfaces in programmable logic controllers. IC Role / Device Role / Timing Role: Main power switch in high-efficiency buck converter operating continuously at 60 °C ambient. Use Value: 150 °C max channel temperature and 65.7 °C/W R_th(ch-a) allow stable operation with minimal heatsinking in sealed enclosures.	Use Scenario: Intermediate bus converter (48 V → 12 V) feeding RF power amplifiers and baseband processing units. IC Role / Device Role / Timing Role: High-frequency switching element in digitally controlled, multi-phase interleaved buck stage. Use Value: Low C_iss (630 pF) and Crss (21 pF) enable precise gate timing control and stable loop compensation at 1.2 MHz switching frequency.

Server VRM

Automotive ADAS Power Supply

Use Scenario: High-density 12 V → 1 V/30 A CPU core voltage regulator in enterprise servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter topology.

Use Value: 10.4 mΩ R_DS(ON) at 4.5 V enables >92% efficiency at full load without active cooling, reducing thermal footprint.

Use Scenario: 12 V → 3.3 V/5 V power supply for radar ECU and camera modules in ADAS domain controllers.

IC Role / Device Role / Timing Role: Primary switching FET in isolated or non-isolated DC-DC converter meeting AEC-Q101 stress requirements.

Use Value: Low Q_SW and fast switching support >1 MHz operation, shrinking filter size and improving transient response to dynamic sensor loads.

Industrial PLC I/O Module

5G Base Station PSU

Use Scenario: Compact 24 V → 5 V/10 A auxiliary supply powering digital I/O and communication interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Main power switch in high-efficiency buck converter operating continuously at 60 °C ambient.

Use Value: 150 °C max channel temperature and 65.7 °C/W R_th(ch-a) allow stable operation with minimal heatsinking in sealed enclosures.

Use Scenario: Intermediate bus converter (48 V → 12 V) feeding RF power amplifiers and baseband processing units.

IC Role / Device Role / Timing Role: High-frequency switching element in digitally controlled, multi-phase interleaved buck stage.

Use Value: Low C_iss (630 pF) and Crss (21 pF) enable precise gate timing control and stable loop compensation at 1.2 MHz switching frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AOCA33122	Lower R_DS(ON) (7.5 mΩ @ 4.5 V), higher Q_g (12.5 nC), same SOP-8 package.	Better conduction loss but higher gate drive loss; suited for lower-frequency, high-current apps where thermal headroom exists.	Prefer AOCA33122 if system prioritizes steady-state efficiency over switching frequency and gate driver cost.
SI7157DP	Higher V_DSS (60 V), higher R_DS(ON) (14.5 mΩ @ 4.5 V), same pinout and footprint.	Wider voltage margin for 48 V input systems; trade-off is higher conduction loss at 24 V input.	Choose SI7157DP only when 30 V V_DSS margin is insufficient and 60 V rating is required for system safety margin.

Compared with AOCA33122 and SI7157DP, the TP89R103NL offers the best balance of low gate charge and moderate R_DS(ON) for 30 V-class high-frequency DC-DC converters-making it optimal for space- and efficiency-critical 500 kHz–2 MHz designs where gate driver simplicity matters.

Availability

TP89R103NL is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS power supplies, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TP89R103NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, reliability, and industrial-grade performance.

The TP89R103NL belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, automotive, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for TP89R103NL?

The TP89R103NL has a DC drain current rating of 15 A at T_c = 25 °C. This value assumes proper PCB thermal design per Toshiba's recommended mounting conditions (glass-epoxy board a). Derating is required above 25 °C case temperature, with full derating to zero at 150 °C channel temperature. The TP89R103NL datasheet specifies ID = 15 A under these defined thermal conditions.

Is TP89R103NL suitable for logic-level gate drive?

Yes, the TP89R103NL is logic-level compatible with a gate threshold voltage (V_th) range of 1.3–2.3 V at V_DS = 10 V and I_D = 0.1 mA. It achieves R_DS(ON) = 10.4 mΩ (typ.) at V_GS = 4.5 V, making it fully drivable by standard 3.3 V or 5 V microcontrollers and PWM controllers without level-shifting circuitry. This behavior is confirmed in the TP89R103NL electrical characteristics table.

What is the avalanche energy rating of TP89R103NL?

The TP89R103NL is rated for single-pulse avalanche energy (E_AS) of 28 mJ under test conditions of V_DD = 24 V, T_ch = 25 °C (initial), L = 99 µH, and I_AR = 15 A. This rating reflects its ability to absorb inductive switching energy without failure and is specified in the Absolute Maximum Ratings section of the TP89R103NL datasheet.

Does TP89R103NL have integrated body diode functionality?

Yes, the TP89R103NL includes an inherent parasitic body diode between drain and source, with a forward voltage (V_DSF) of –1.2 V (max) at I_DR = 15 A and V_GS = 0 V. This diode enables freewheeling current paths in buck and flyback topologies. Its reverse recovery characteristics are not separately specified, so synchronous rectification is recommended for high-efficiency designs using the TP89R103NL.

What is the thermal resistance from channel to ambient for TP89R103NL?

The TP89R103NL has a channel-to-ambient thermal resistance (R_th(ch-a)) of 65.7 °C/W when mounted on a standard glass-epoxy board (configuration a, per Figure 5.1). A second value of 125 °C/W applies to configuration b (Figure 5.2). These values are measured under defined PCB layout conditions and must be used with derating curves to ensure T_ch ≤ 150 °C in actual TP89R103NL applications.

TP89R103NL,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 9.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

TP89R103NL,LQ FAQ

1.How can I place an order for TP89R103NL,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TP89R103NL,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TP89R103NL,LQ reliable?

The price and inventory of TP89R103NL,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TP89R103NL,LQ is usually 5 days.

3.What payment methods are accepted for TP89R103NL,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TP89R103NL,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TP89R103NL,LQ?

TP89R103NL,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TP89R103NL,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TP89R103NL,LQ?

For technical support, including TP89R103NL,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TP89R103NL,LQ requirements.

6.How does Aetrix verify that TP89R103NL,LQ is sourced from the original manufacturer or authorized distributors?

All TP89R103NL,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TP89R103NL,LQ meets industry standards.

7.What is the process for return or replacement of TP89R103NL,LQ?

All TP89R103NL,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TP89R103NL,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TP89R103NL,LQ part is unused and in its original packaging.

Return procedure for TP89R103NL,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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