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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPC8132,LQ(S

Name: TPC8132,LQ(S
Brand: Toshiba Semiconductor and Storage
SKU: TPC8132,LQ(S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPC8132,LQ(S

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: TPC8132,LQ(S.pdf

Description:: MOSFET P-CH 40V 7A 8SOP

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Product details

Overview

TPC8132,LQ(S) from Toshiba is a P-channel enhancement-mode MOSFET designed for high-efficiency power management switches and lithium-ion battery protection circuits. It features -40 V drain-source breakdown voltage, 20 mΩ typical R_DS(ON) at V_GS = -10 V, -7 A DC drain current, and SOP-8 package with source-gate-drain terminal configuration.

For engineers reviewing the TPC8132,LQ(S) datasheet, TPC8132,LQ(S) pinout, TPC8132,LQ(S) application, or TPC8132,LQ(S) equivalent, key selection criteria include low on-resistance under -4.5 V gate drive, guaranteed avalanche energy of 22 mJ, thermal resistance of 65.7 °C/W (mounted on glass-epoxy board), and RoHS-compliant marking per Toshiba's environmental labeling convention.

Technical Context

This device operates in enhancement mode with gate threshold voltage ranging from -0.8 V to -2.0 V (V_DS = -10 V, I_D = -0.2 mA), enabling reliable turn-on control in low-voltage battery-side switching. Its U-MOS™ structure delivers low R_DS(ON) while maintaining tight leakage control (I_DSS ≤ -10 µA at V_DS = -40 V).

The TPC8132,LQ(S) supports pulsed drain currents up to -28 A and single-pulse avalanche energy of 22 mJ (V_DD = -24 V, L = 0.5 mH), making it suitable for transient-overload tolerant load switch designs. Dynamic parameters include C_iss = 1580 pF and Q_g = 34 nC, indicating moderate switching speed with gate charge optimized for 25 Ω external gate resistor drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-40 V - Maximum blocking voltage for Li-ion battery pack isolation and reverse-polarity protection
R_DS(ON) (typ.)	20 mΩ at V_GS = -10 V - Enables <150 mW conduction loss at 7 A continuous current
I_D (DC)	-7 A - Supports sustained load switching in portable power rails and battery management ICs
V_th	-0.8 to -2.0 V - Ensures turn-on compatibility with 3.3 V and 5 V logic-level gate drivers
E_AS	22 mJ - Withstands inductive kickback in motor driver or solenoid control without external snubber
C_iss	1580 pF - Determines gate drive power requirement and switching transition time with standard gate resistors
R_th(ch-a)	65.7 °C/W - Requires minimal copper area on FR-4 PCB to maintain channel temperature below 150 °C at full load

Pinout & Package

TPC8132,LQ(S) uses the SOP-8 surface-mount package (TOSHIBA designation: 2-5R1S), measuring 4.9 × 6.0 × 1.75 mm with 0.085 g typical weight. The package supports automated assembly and provides adequate thermal dissipation for medium-power switching.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; internally tied together for low-inductance connection
4	Gate	Control input requiring negative voltage relative to source to turn on P-channel device
5, 6, 7, 8	Drain	Main high-side switching node; connected to battery positive or supply rail in load-switch topology

Key Features

Feature	Design Value
U-MOS™ trench process	Delivers 20 mΩ R_DS(ON) in SOP-8, reducing conduction loss by >35% vs. planar P-MOSFETs of same size
Low gate threshold range	-0.8 to -2.0 V enables direct interface with microcontroller GPIOs without level-shifting circuitry
Guaranteed avalanche capability	22 mJ single-pulse rating allows safe operation in inductive load switching without external clamping diodes
RoHS-compliant marking	Underlined lot number indicates [[G]]/RoHS COMPATIBLE status per EU Directive 2011/65/EU
Thermal design support	Published R_th(ch-a) values for two PCB mounting configurations aid accurate junction temperature estimation

Applications

Lithium-Ion Battery Protection	Power Management Switch
Use Scenario: Reverse-current blocking and over-discharge cutoff in 2–4 cell Li-ion packs. IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlled by battery protection IC to disconnect load during fault conditions. Use Value: 20 mΩ R_DS(ON) limits voltage drop to <140 mV at 7 A, preserving usable battery capacity and minimizing self-heating.	Use Scenario: Hot-swap and inrush current limiting in USB-C PD power delivery modules. IC Role / Device Role / Timing Role: Load switch placed between input source and downstream DC-DC converter or system rail. Use Value: -40 V V_DSS and -28 A pulsed current rating accommodate transient surges during connector mating and capacitive load charging.
Motor Driver Half-Bridge	Industrial Sensor Power Control
Use Scenario: Upper-leg switch in brushed DC motor H-bridge for robotics and actuator control. IC Role / Device Role / Timing Role: Synchronized high-side switch complementing N-channel low-side FET in PWM-driven bridge. Use Value: 22 mJ avalanche energy absorbs back-EMF spikes during PWM commutation without failure or derating.	Use Scenario: Remote on/off control of analog sensor front-ends in industrial IoT nodes. IC Role / Device Role / Timing Role: Low-leakage power gate enabling <10 µA standby current when sensors are inactive. Use Value: IDSS ≤ -10 µA at -40 V ensures negligible quiescent drain in always-on battery-powered systems.

Lithium-Ion Battery Protection

Power Management Switch

Use Scenario: Reverse-current blocking and over-discharge cutoff in 2–4 cell Li-ion packs.

IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlled by battery protection IC to disconnect load during fault conditions.

Use Value: 20 mΩ R_DS(ON) limits voltage drop to <140 mV at 7 A, preserving usable battery capacity and minimizing self-heating.

Use Scenario: Hot-swap and inrush current limiting in USB-C PD power delivery modules.

IC Role / Device Role / Timing Role: Load switch placed between input source and downstream DC-DC converter or system rail.

Use Value: -40 V V_DSS and -28 A pulsed current rating accommodate transient surges during connector mating and capacitive load charging.

Motor Driver Half-Bridge

Industrial Sensor Power Control

Use Scenario: Upper-leg switch in brushed DC motor H-bridge for robotics and actuator control.

IC Role / Device Role / Timing Role: Synchronized high-side switch complementing N-channel low-side FET in PWM-driven bridge.

Use Value: 22 mJ avalanche energy absorbs back-EMF spikes during PWM commutation without failure or derating.

Use Scenario: Remote on/off control of analog sensor front-ends in industrial IoT nodes.

IC Role / Device Role / Timing Role: Low-leakage power gate enabling <10 µA standby current when sensors are inactive.

Use Value: IDSS ≤ -10 µA at -40 V ensures negligible quiescent drain in always-on battery-powered systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-GE3	R_DS(ON) = 115 mΩ (V_GS = -4.5 V); smaller SOT-23 package; lower voltage rating (-20 V)	Suitable only for 3.3 V logic-controlled low-voltage loads; not rated for 40 V battery systems	Select when space-constrained and operating below 20 V with relaxed on-resistance requirements.
AO3401A	R_DS(ON) = 44 mΩ (V_GS = -4.5 V); SOP-8 package; V_DSS = -30 V; higher leakage (I_DSS ≤ -1 µA)	Acceptable for 3-cell Li-ion (≤12.6 V) but insufficient for 4-cell or 40 V bus protection	Choose for cost-sensitive 3.3 V gate-drive designs where 44 mΩ loss is acceptable and voltage stress remains <30 V.

Compared with Si2301DDS-T1-GE3 and AO3401A, the TPC8132,LQ(S) offers superior voltage rating (-40 V), lowest R_DS(ON), and guaranteed avalanche robustness-making it the preferred choice for 4-cell battery protection and industrial 36 V power rails where reliability under transient stress is critical.

Availability

TPC8132,LQ(S) is available at Aetrix Electronics and suitable for lithium-ion battery protection, power management switches, and industrial sensor power control requiring stable component supply across production lifecycles.

Supply support for TPC8132,LQ(S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, reliability, and automotive-grade quality.

The TPC8132,LQ(S) belongs to Toshiba's U-MOS™ P-channel MOSFET product line, engineered specifically for high-density, low-loss power switching in portable and industrial battery-powered systems.

FAQ

What is the maximum continuous drain current rating for the TPC8132,LQ(S)?

The TPC8132,LQ(S) has a maximum continuous drain current (I_D) rating of -7 A at T_a = 25 °C. This rating assumes proper PCB layout with sufficient copper area to maintain channel temperature below 150 °C. Derating is required above ambient temperatures of 25 °C, per the published thermal resistance curve in the datasheet.

Does the TPC8132,LQ(S) support logic-level gate drive?

Yes, the TPC8132,LQ(S) supports logic-level gate drive with a gate threshold voltage (V_th) range of -0.8 V to -2.0 V. At V_GS = -4.5 V, it achieves R_DS(ON) ≤ 33 mΩ, enabling direct control from 3.3 V or 5 V microcontrollers without external level shifters.

What is the avalanche energy rating of the TPC8132,LQ(S), and how is it tested?

The TPC8132,LQ(S) has a guaranteed single-pulse avalanche energy (E_AS) rating of 22 mJ. It is tested under standardized conditions: V_DD = -24 V, T_ch = 25 °C (initial), L = 0.5 mH, R_G = 25 Ω, and I_AR = -7 A. This rating confirms robustness against inductive switching transients in real-world load-switch applications.

Is the TPC8132,LQ(S) RoHS compliant, and how is compliance indicated on the device?

Yes, the TPC8132,LQ(S) is RoHS compliant. Compliance is indicated by an underlined lot number on the device marking, which corresponds to [[G]]/RoHS COMPATIBLE per Toshiba's labeling convention. Non-underlined markings indicate lead-containing versions; always verify marking per shipment documentation.

What is the thermal resistance from channel to ambient for the TPC8132,LQ(S) on a standard PCB?

The TPC8132,LQ(S) has a channel-to-ambient thermal resistance (R_th(ch-a)) of 65.7 °C/W when mounted on a standard glass-epoxy board (configuration "a", per Figure 5.1). This value assumes defined copper pad layout and is used to calculate junction temperature rise under steady-state power dissipation.

TPC8132,LQ(S Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVI

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: +20V, -25V

Input Capacitance (Ciss) (Max) @ Vds:: 1580 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

TPC8132,LQ(S FAQ

1.How can I place an order for TPC8132,LQ(S through Aetrix?

Please submit a Request for Quotation (RFQ) for TPC8132,LQ(S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPC8132,LQ(S reliable?

The price and inventory of TPC8132,LQ(S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPC8132,LQ(S is usually 5 days.

3.What payment methods are accepted for TPC8132,LQ(S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPC8132,LQ(S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPC8132,LQ(S?

TPC8132,LQ(S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPC8132,LQ(S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPC8132,LQ(S?

For technical support, including TPC8132,LQ(S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPC8132,LQ(S requirements.

6.How does Aetrix verify that TPC8132,LQ(S is sourced from the original manufacturer or authorized distributors?

All TPC8132,LQ(S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPC8132,LQ(S meets industry standards.

7.What is the process for return or replacement of TPC8132,LQ(S?

All TPC8132,LQ(S units undergo pre-shipment inspection (PSI). If there is an issue with TPC8132,LQ(S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPC8132,LQ(S part is unused and in its original packaging.

Return procedure for TPC8132,LQ(S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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