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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPC8133,LQ(S

Name: TPC8133,LQ(S
Brand: Toshiba Semiconductor and Storage
SKU: TPC8133,LQ(S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPC8133,LQ(S

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: TPC8133,LQ(S.pdf

Description:: MOSFET P-CH 40V 9A 8SOP

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Product details

Overview

TPC8133,LQ(S) from Toshiba is a silicon P-channel enhancement-mode MOSFET in SOP-8 package, rated for -40 V drain-source voltage, -9 A DC drain current, and 11 mΩ typical R_DS(ON) at V_GS = -10 V. It serves as a high-efficiency power management switch in lithium-ion battery protection circuits and load switching applications.

For engineers reviewing the TPC8133,LQ(S) datasheet, TPC8133,LQ(S) pinout, TPC8133,LQ(S) application, or TPC8133,LQ(S) equivalent, key selection criteria include verified R_DS(ON), gate threshold voltage range (-0.8 to -2.0 V), avalanche energy rating (37 mJ), thermal resistance (65.7 °C/W on standard PCB), and SOP-8 terminal mapping for PCB layout validation.

Technical Context

This P-channel U-MOS™ device operates in enhancement mode with a negative gate threshold voltage, enabling direct logic-level control from 3.3 V or 5 V microcontrollers when used with appropriate level-shifting or gate drive configuration. Its low R_DS(ON) and optimized gate charge (64 nC total) support efficient switching in high-current DC load paths.

The integrated body diode supports reverse-current conduction in battery back-up and OR-ing configurations, with a forward voltage of 1.2 V at -9 A and zero gate bias. Thermal performance is defined for two mounting conditions: 65.7 °C/W (glass-epoxy board type a) and 125 °C/W (type b), requiring layout-aware derating per Toshiba's reliability guidelines.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-40 V - Maximum blocking voltage for battery-side high-side switch placement
R_DS(ON) (typ.)	11 mΩ at V_GS = -10 V - Enables <100 mW conduction loss at 3 A load current
I_D (DC)	-9 A - Supports continuous load switching up to 9 A with proper heatsinking
V_th	-0.8 to -2.0 V - Ensures reliable turn-on with standard logic-level gate drive
E_AS	37 mJ - Withstands single-pulse inductive energy during load dump or hot-swap events
C_iss	2900 pF - Determines gate drive strength requirement for 100 ns–360 ns switching times
P_D (T_a=25°C)	1.9 W - Limits usable power dissipation without forced cooling on standard FR-4

Pinout & Package

TPC8133,LQ(S) uses the SOP-8 surface-mount package (Toshiba designation: 2-5R1S), measuring 4.9 × 6.0 × 1.75 mm with 0.085 g typical mass. The package features exposed drain pads on pins 5–8 for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; tied to system ground or battery negative in high-side switch topology
4	Gate	Control input requiring negative V_GS for turn-on; sensitive to ESD (±20 V max gate-source voltage)
5, 6, 7, 8	Drain	High-current output node connected to battery positive or supply rail; electrically and thermally coupled via exposed pad

Key Features

Feature	Design Value
Low R_DS(ON) at logic-compatible V_GS	13.5 mΩ typ. at V_GS = -4.5 V enables use with 5 V microcontroller outputs without external level shifters
Ultra-low leakage	IDSS ≤ -10 µA at V_DS = -40 V minimizes standby current in always-on battery systems
Robust avalanche capability	37 mJ single-pulse rating allows safe operation under inductive load switching without snubbers
Thermally optimized SOP-8	Exposed drain terminals reduce thermal resistance by ~30% vs. standard SOP-8, improving power handling

Applications

Lithium-Ion Battery Protection	Power Management Switch
Use Scenario: Reverse-current blocking and over-discharge protection in 2-cell to 3-cell Li-ion packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlling battery discharge path; activated by protection IC's gate driver output. Use Value: 11 mΩ R_DS(ON) limits voltage drop to <33 mV at 3 A, preserving battery runtime and state-of-charge accuracy.	Use Scenario: Hot-swap and load switching in portable medical devices and industrial handhelds. IC Role / Device Role / Timing Role: Load switch isolating auxiliary rails (e.g., display backlight, sensor bias) from main battery. Use Value: -2.0 V maximum V_th ensures full enhancement with 3.3 V GPIO, eliminating need for dedicated gate drivers.
USB Power Delivery Switching	OR-ing Diode Replacement
Use Scenario: Input power path selection between USB-C PD port and internal battery in dual-input systems. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (with second device) implementing bidirectional power routing. Use Value: Low C_iss (2900 pF) and fast turn-off time (360 ns) enable clean transitions during source arbitration without bus glitches.	Use Scenario: Replacing Schottky diodes in redundant power supplies to reduce forward voltage drop. IC Role / Device Role / Timing Role: Active OR-ing switch placed between two independent 12 V sources feeding common load. Use Value: 1.2 V body diode V_DSF at -9 A provides lower conduction loss than typical 0.4 V Schottky only when used in synchronous rectification mode with gate control.

Lithium-Ion Battery Protection

Power Management Switch

Use Scenario: Reverse-current blocking and over-discharge protection in 2-cell to 3-cell Li-ion packs.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlling battery discharge path; activated by protection IC's gate driver output.

Use Value: 11 mΩ R_DS(ON) limits voltage drop to <33 mV at 3 A, preserving battery runtime and state-of-charge accuracy.

Use Scenario: Hot-swap and load switching in portable medical devices and industrial handhelds.

IC Role / Device Role / Timing Role: Load switch isolating auxiliary rails (e.g., display backlight, sensor bias) from main battery.

Use Value: -2.0 V maximum V_th ensures full enhancement with 3.3 V GPIO, eliminating need for dedicated gate drivers.

USB Power Delivery Switching

OR-ing Diode Replacement

Use Scenario: Input power path selection between USB-C PD port and internal battery in dual-input systems.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (with second device) implementing bidirectional power routing.

Use Value: Low C_iss (2900 pF) and fast turn-off time (360 ns) enable clean transitions during source arbitration without bus glitches.

Use Scenario: Replacing Schottky diodes in redundant power supplies to reduce forward voltage drop.

IC Role / Device Role / Timing Role: Active OR-ing switch placed between two independent 12 V sources feeding common load.

Use Value: 1.2 V body diode V_DSF at -9 A provides lower conduction loss than typical 0.4 V Schottky only when used in synchronous rectification mode with gate control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS-T1-GE3	R_DS(ON) = 115 mΩ @ V_GS = -4.5 V; SOT-23 package; 30 V rating	Lower voltage/current rating; suited for sub-2 A loads where space is critical	Select when footprint size is prioritized over conduction loss in low-power battery monitoring circuits.
AO3401	R_DS(ON) = 44 mΩ @ V_GS = -4.5 V; SOP-8; -30 V rating; higher Q_g (10 nC)	Higher R_DS(ON) increases conduction loss but offers tighter V_th distribution and broader availability	Choose for cost-sensitive designs where 44 mΩ is acceptable and legacy supply chain compatibility is required.

Compared with Si2301DDS-T1-GE3 and AO3401, the TPC8133,LQ(S) delivers superior conduction efficiency at high current due to its 11 mΩ R_DS(ON) and optimized gate charge, making it preferred for >3 A battery-switching applications where thermal margin and voltage headroom are constrained.

Availability

TPC8133,LQ(S) is available at Aetrix Electronics and suitable for lithium-ion battery protection, power management switching, and OR-ing diode replacement applications requiring stable component supply across production lifecycles.

Supply support for TPC8133,LQ(S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and reliability for industrial and consumer systems.

The TPC8133,LQ(S) belongs to Toshiba's U-MOS™ P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage power switching in portable and battery-powered equipment.

FAQ

What is the maximum continuous drain current rating for TPC8133,LQ(S) at 25°C ambient?

The TPC8133,LQ(S) has a DC drain current rating of -9 A at T_a = 25°C with proper PCB thermal design. This assumes mounting on a glass-epoxy board (type a) per Toshiba's test condition. Derating is required above 25°C ambient, with channel temperature limited to 150°C. At 70°C ambient, usable I_D drops to approximately -5.5 A based on its 65.7 °C/W thermal resistance.

Does TPC8133,LQ(S) support logic-level gate drive from a 3.3 V microcontroller?

Yes, the TPC8133,LQ(S) has a gate threshold voltage range of -0.8 V to -2.0 V, allowing full enhancement with -3.3 V gate drive relative to source. At V_GS = -4.5 V, its R_DS(ON) is 13.5 mΩ (typ.), confirming robust conduction at 3.3 V–5 V logic levels without external level shifting.

What is the avalanche energy rating of TPC8133,LQ(S), and how is it tested?

The TPC8133,LQ(S) is rated for 37 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = -24 V, T_ch = 25°C (initial), L = 0.5 mH, R_G = 25 Ω, and I_AR = -9 A. This rating validates safe operation during inductive switching transients, such as motor load disconnection or relay coil de-energization, without requiring external clamping components.

How is the SOP-8 package of TPC8133,LQ(S) thermally enhanced compared to standard SOP-8?

The TPC8133,LQ(S) SOP-8 (Toshiba 2-5R1S) features an exposed drain pad across pins 5–8, which serves both electrical and thermal functions. When soldered to a copper pour, this structure reduces channel-to-ambient thermal resistance to 65.7 °C/W (vs. ~125 °C/W for non-exposed variants), enabling higher power dissipation and improved long-term reliability in compact layouts.

Is TPC8133,LQ(S) RoHS compliant, and what marking indicates compliance?

Yes, TPC8133,LQ(S) is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and labeled [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]. Non-compliant versions show an unlined lot number and [[Pb]]/INCLUDES > MCV. Environmental compliance details should be confirmed with Toshiba's sales representative or official material declarations.

TPC8133,LQ(S Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVI

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 2V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: +20V, -25V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

TPC8133,LQ(S FAQ

1.How can I place an order for TPC8133,LQ(S through Aetrix?

Please submit a Request for Quotation (RFQ) for TPC8133,LQ(S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPC8133,LQ(S reliable?

The price and inventory of TPC8133,LQ(S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPC8133,LQ(S is usually 5 days.

3.What payment methods are accepted for TPC8133,LQ(S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPC8133,LQ(S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPC8133,LQ(S?

TPC8133,LQ(S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPC8133,LQ(S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPC8133,LQ(S?

For technical support, including TPC8133,LQ(S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPC8133,LQ(S requirements.

6.How does Aetrix verify that TPC8133,LQ(S is sourced from the original manufacturer or authorized distributors?

All TPC8133,LQ(S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPC8133,LQ(S meets industry standards.

7.What is the process for return or replacement of TPC8133,LQ(S?

All TPC8133,LQ(S units undergo pre-shipment inspection (PSI). If there is an issue with TPC8133,LQ(S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPC8133,LQ(S part is unused and in its original packaging.

Return procedure for TPC8133,LQ(S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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