Toshiba Semiconductor and Storage TPC8134,LQ(S

Overview

TPC8134,LQ(S) from Toshiba is a silicon P-channel enhancement-mode MOSFET in SOP-8 package, designed for high-efficiency power management switches and lithium-ion battery protection circuits. It delivers R_DS(ON) = 39 mΩ (typ.) at V_GS = −10 V, supports −5 A DC drain current, and features V_th = −0.8 to −2.0 V for reliable gate control in low-voltage systems.

For engineers reviewing the TPC8134,LQ(S) datasheet, TPC8134,LQ(S) pinout, TPC8134,LQ(S) application, or TPC8134,LQ(S) equivalent, key selection criteria include its −40 V V_DSS, low leakage (I_DSS ≤ −10 µA), thermal resistance (R_th(ch-a) = 65.7 °C/W on standard PCB), and SOP-8 footprint compatibility with space-constrained portable power designs.

Technical Context

This P-channel U-MOS™ device operates in enhancement mode with negative threshold voltage, enabling direct high-side switching without level-shifting circuitry. Its internal structure integrates four parallel drain terminals (pins 5–8) and triple-source configuration (pins 1–3) to reduce conduction losses and improve current handling.

The TPC8134,LQ(S) exhibits defined avalanche capability (E_AS = 11 mJ, I_AR = −5 A) and gate charge parameters (Q_g = 20 nC, Q_gd = 5 nC) optimized for fast, low-loss switching in battery disconnect and load-switching topologies.

Key Specifications

Pinout & Package

SOP-8 surface-mount package (Toshiba designation: 2-5R1S), 0.085 g typical weight, 5.0 × 6.2 × 1.75 mm outline. Designed for reflow soldering and automated assembly in high-volume portable power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with Si2301DS-T1-BE3 and AO3401A, the TPC8134,LQ(S) offers the lowest R_DS(ON) in SOP-8 among these three, making it optimal for thermally constrained, medium-current Li-ion protection where conduction efficiency directly impacts runtime and thermal design.

Availability

TPC8134,LQ(S) is available at Aetrix Electronics and suitable for lithium-ion battery protection, power management switches, and reverse polarity protection requiring stable component supply across consumer, medical, and industrial production programs.

Supply support for TPC8134,LQ(S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and reliability for global electronics markets.

The TPC8134,LQ(S) belongs to Toshiba's U-MOS™ P-channel MOSFET product line, engineered specifically for high-density, low-R_DS(ON) power switching in portable and battery-powered equipment.

FAQ

What is the maximum continuous drain current rating for the TPC8134,LQ(S)?

The TPC8134,LQ(S) has a maximum continuous drain current (I_D) rating of −5 A at T_a = 25 °C with proper PCB thermal management. Derating applies above 25 °C ambient; at 70 °C, the usable I_D drops to approximately −3.2 A based on its 65.7 °C/W channel-to-ambient thermal resistance. This rating assumes operation within the SOA curve and adherence to the 150 °C maximum channel temperature limit.

Does the TPC8134,LQ(S) support gate drive from a 3.3 V microcontroller?

Yes, the TPC8134,LQ(S) supports gate drive from a 3.3 V microcontroller because its gate threshold voltage (V_th) ranges from −0.8 V to −2.0 V, ensuring full enhancement at V_GS = −3.3 V. However, R_DS(ON) increases to 52 mΩ (max) at V_GS = −4.5 V, so conduction loss will be higher than at −10 V. For optimal efficiency, pair with an inverting driver stage if −10 V bias is available.

What is the meaning of the underlined lot number marking on the TPC8134,LQ(S) package?

An underlined lot number on the TPC8134,LQ(S) package indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] compliance per EU Directive 2011/65/EU. This marking confirms lead-free termination and restricted substance compliance. Non-underlined markings denote legacy [[Pb]] versions. Always verify RoHS status via Toshiba's official documentation or sales representative before final qualification.

Can the TPC8134,LQ(S) be used in avalanche mode, and what is its rated energy?

Yes, the TPC8134,LQ(S) is rated for single-pulse avalanche operation with E_AS = 11 mJ under specified test conditions (V_DD = −24 V, T_ch = 25 °C, L = 0.5 mH, R_G = 25 Ω, I_AR = −5 A). This capability enables use in inductive load switching without external snubbers, but repeated avalanche events must be avoided to maintain long-term reliability per Toshiba's Reliability Handbook guidelines.

How does the triple-source pin configuration (pins 1–3) benefit PCB layout for the TPC8134,LQ(S)?

The triple-source configuration (pins 1, 2, 3) of the TPC8134,LQ(S) reduces effective source inductance and improves current sharing across the internal die structure. In PCB layout, this allows symmetric copper pour routing to all three pins, lowering parasitic inductance in high-di/dt switching paths-critical for minimizing voltage spikes and improving stability in battery disconnect circuits and load-switch applications.