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Toshiba Semiconductor and Storage TPCC8105,L1Q
- Part No.:
- TPCC8105,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
TPCC8105,L1Q.pdf
- Description:
- PB-F POWER MOSFET TRANSISTOR TSO
- Quantity:
- Payment:
- Shipping:
Inventory:3,023
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Product details
Overview
TPCC8105,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon P-channel enhancement-mode MOSFET in TSON Advance (2-3X1S) package, rated for -30 V drain-source voltage, 6.0 mΩ typical RDS(ON) at VGS = -10 V, and -23 A continuous drain current. It serves as a high-efficiency power management switch in lithium-ion battery protection circuits and load switching applications.
For engineers reviewing the TPCC8105,L1Q datasheet, TPCC8105,L1Q pinout, TPCC8105,L1Q application, or TPCC8105,L1Q equivalent, key selection criteria include its low on-resistance, tight gate threshold range (-0.8 to -2.0 V), ultra-low leakage (<10 µA), thermal resistance (4.16 °C/W channel-to-case), and avalanche energy rating (138 mJ).
Technical Context
This P-channel MOSFET operates in enhancement mode with a negative gate threshold voltage, enabling direct high-side switching without level-shifting circuitry. Its TSON Advance package integrates an exposed drain pad across pins 5–8 for efficient heat dissipation and supports high pulsed currents up to -69 A.
The device features low input capacitance (3240 pF) and fast switching times (rise time 8 ns, fall time 110 ns), optimized for synchronous rectification and battery disconnect functions where low conduction loss and controlled turn-off dynamics are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30 V - Maximum blocking voltage for Li-ion battery systems operating up to 24 V nominal. |
| RDS(ON) (typ.) | 6.0 mΩ @ VGS = -10 V - Enables <150 mW conduction loss at 20 A, reducing thermal stress in compact PCB layouts. |
| ID (DC) | -23 A - Sustained current capability suitable for main battery discharge path switching. |
| Vth | -0.8 to -2.0 V - Ensures reliable turn-on with standard logic-level gate drive (e.g., microcontroller GPIO at 3.3 V or 5 V via inverter). |
| EAS | 138 mJ - Avalanche energy rating allows safe operation during inductive load transients without external snubbers. |
| Rth(ch-c) | 4.16 °C/W - Low thermal resistance enables >20 W power dissipation with minimal case temperature rise when mounted on copper pour. |
Pinout & Package
TSON Advance (2-3X1S) package: 8-pin surface-mount, 3.0 × 1.8 × 0.85 mm, exposed drain pad (pins 5–8), weight 0.02 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; tied to system ground or battery negative in high-side switch configuration. |
| 4 | Gate | Control terminal requiring negative VGS for turn-on; must be driven below source potential by ≥0.8 V. |
| 5, 6, 7, 8 | Drain | High-current output node connected to battery positive or load; electrically and thermally coupled to exposed metal pad. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 6.0 mΩ typ. at -10 V gate drive reduces I²R losses in portable power paths, extending battery runtime. |
| Ultra-low IDSS | -10 µA max at -30 V ensures negligible standby current in always-on battery protection ICs. |
| Enhancement-mode Vth | -0.8 to -2.0 V enables direct interface with 3.3 V/5 V logic controllers without gate driver ICs. |
| Avalanche-rated | 138 mJ single-pulse energy rating protects against inductive kickback in motor or solenoid control circuits. |
Applications
| Lithium-Ion Battery Protection | Power Management Switch |
|---|---|
Use Scenario: Integrated into battery pack protection boards to isolate cells during overcharge, over-discharge, or short-circuit events. IC Role / Device Role / Timing Role: High-side main switch controlling current flow between battery stack and system load. Use Value: 6.0 mΩ RDS(ON) minimizes voltage drop and self-heating during fault isolation, preserving protection circuit accuracy. | Use Scenario: Used in USB-C PD power path management to enable/disable VBUS supply based on negotiation status. IC Role / Device Role / Timing Role: Load switch providing controlled power-up/down sequencing and reverse-current blocking. Use Value: Fast 8 ns rise time and 110 ns fall time support precise timing in dynamic power delivery protocols. |
| Portable Medical Devices | Industrial Sensor Nodes |
Use Scenario: Isolating backup coin-cell or supercapacitor supply from main Li-ion battery during deep-sleep modes. IC Role / Device Role / Timing Role: Low-leakage (≤10 µA) power gate ensuring multi-year shelf life without battery drain. Use Value: -2.0 V maximum Vth guarantees robust turn-off even with aging gate oxide or temperature drift. | Use Scenario: Enabling/disabling RF transceivers or analog front-ends in wireless sensor nodes to meet duty-cycle power budgets. IC Role / Device Role / Timing Role: Efficient power gating element with minimal footprint (3.0 × 1.8 mm) for space-constrained modules. Use Value: TSON Advance package provides 4.16 °C/W thermal resistance, allowing full -23 A rating without heatsink in ambient ≤60 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AO3401A | RDS(ON) = 5.7 mΩ (typ.) at -4.5 V; higher Ciss (1200 pF); SOT-23 package (larger Rth(ch-a) = 150 °C/W). | Better low-voltage drive but less suited for high-current, thermally constrained designs. | Prefer AO3401A only when gate drive is limited to -4.5 V and board area permits larger thermal footprint. |
| SI2301DS-T1-BE3 | RDS(ON) = 110 mΩ (typ.) at -4.5 V; lower current rating (-2.7 A); same SOT-23 footprint. | Targeted at low-power signal switching, not main battery path switching. | Select SI2301DS-T1-BE3 only for sub-1 A loads where cost and size outweigh efficiency requirements. |
Compared with AO3401A and SI2301DS-T1-BE3, the TPCC8105,L1Q delivers superior thermal performance (4.16 °C/W vs. >150 °C/W), higher current capacity (-23 A vs. ≤-4.2 A), and tighter Vth distribution-making it optimal for high-reliability, high-current battery management where thermal headroom and conduction loss are critical.
Availability
TPCC8105,L1Q is available at Aetrix Electronics and suitable for lithium-ion battery protection, power management switches, and portable medical devices requiring stable component supply and long-term lifecycle assurance.
Supply support for TPCC8105,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and miniaturization.
The TPCC8105,L1Q belongs to Toshiba's U-MOS series of P-channel MOSFETs, engineered specifically for high-efficiency, space-constrained power switching in battery-powered systems.
FAQ
What is the gate threshold voltage range for TPCC8105,L1Q?
The TPCC8105,L1Q has a gate threshold voltage (Vth) range of -0.8 V to -2.0 V at VDS = -10 V and ID = -0.5 mA. This ensures consistent turn-on behavior across temperature and process variation, supporting reliable operation with 3.3 V or 5 V logic-level gate drivers when used in inverting configurations.
Can TPCC8105,L1Q be used in high-side switch configurations?
Yes, the TPCC8105,L1Q is designed for high-side switching due to its P-channel enhancement-mode architecture. When placed between battery positive and load, it turns on with a gate voltage sufficiently below the source (e.g., 0 V gate with source at +VBAT). Its -30 V VDSS rating supports common Li-ion stacks up to 24 V.
What is the maximum continuous drain current for TPCC8105,L1Q?
The TPCC8105,L1Q supports -23 A continuous drain current (ID) at Tc = 25 °C. Derating applies above 25 °C case temperature; the device maintains -11.5 A at Tc = 100 °C per the guaranteed maximum power dissipation curve in the datasheet.
Does TPCC8105,L1Q have avalanche capability?
Yes, the TPCC8105,L1Q is rated for 138 mJ single-pulse avalanche energy (EAS) under specified test conditions (VDD ≈ -24 V, Tch = 25 °C, L = 0.2 mH, RG = 1 Ω). This capability enhances ruggedness in inductive load switching and fault transient handling without external clamping components.
What package type does TPCC8105,L1Q use and what are its thermal characteristics?
The TPCC8105,L1Q uses the TSON Advance (2-3X1S) package - an 8-pin, 3.0 × 1.8 × 0.85 mm surface-mount outline with an exposed drain pad. Its channel-to-case thermal resistance is 4.16 °C/W, enabling efficient heat transfer to PCB copper when properly soldered, which is critical for sustaining high-current operation in compact designs.
TPCC8105,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVI
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 76 nC @ 10 V
- Vgs (Max):
- +20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3240 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 700mW (Ta), 30W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-TSON Advance (3.3x3.3)
TPCC8105,L1Q FAQ
1.How can I place an order for TPCC8105,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPCC8105,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPCC8105,L1Q reliable?
The price and inventory of TPCC8105,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPCC8105,L1Q is usually 5 days.
3.What payment methods are accepted for TPCC8105,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPCC8105,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPCC8105,L1Q?
TPCC8105,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPCC8105,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPCC8105,L1Q?
For technical support, including TPCC8105,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPCC8105,L1Q requirements.
6.How does Aetrix verify that TPCC8105,L1Q is sourced from the original manufacturer or authorized distributors?
All TPCC8105,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPCC8105,L1Q meets industry standards.
7.What is the process for return or replacement of TPCC8105,L1Q?
All TPCC8105,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPCC8105,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPCC8105,L1Q part is unused and in its original packaging.
Return procedure for TPCC8105,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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