Toshiba Semiconductor and Storage TPH1110ENH,L1Q

Overview

TPH1110ENH,L1Q from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-frequency switching in DC-DC converters and voltage regulators. It delivers R_DS(ON) = 96 mΩ (typ.) at V_GS = 10 V, Q_SW = 2.6 nC (typ.), and V_DSS = 200 V, enabling efficient 200 V-class power conversion with low conduction and switching losses.

For engineers reviewing the TPH1110ENH,L1Q datasheet, TPH1110ENH,L1Q pinout, TPH1110ENH,L1Q application, or TPH1110ENH,L1Q equivalent, key selection criteria include its SOP Advance package thermal performance (R_th(ch-c) = 2.97 °C/W), gate threshold range (2.0–4.0 V), and avalanche-rated ruggedness (E_AS = 33 mJ) for reliable operation under transient stress.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to optimize cell density and reduce specific on-resistance. Its enhancement-mode operation (V_th = 2.0–4.0 V) ensures clean turn-on with standard logic-level gate drivers, while low Crss (3.0 pF typ.) and Ciss (460 pF typ.) support stable high-speed switching up to several hundred kHz.

The device integrates a built-in body diode with V_DSF = −1.2 V (max) at I_DR = 7.2 A and supports unclamped inductive switching with guaranteed single-pulse avalanche energy of 33 mJ - critical for flyback and synchronous rectifier topologies where voltage overshoot occurs.

Key Specifications

Pinout & Package

TPH1110ENH,L1Q is housed in the SOP Advance surface-mount package (TOSHIBA designation: 2-5Q1S), featuring exposed drain pads for enhanced thermal dissipation. The 8-pin configuration provides parallel drain terminals and dual-source connections to minimize source inductance and improve switching stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM20 and IRF6645TRPBF, the TPH1110ENH,L1Q uniquely combines 200 V rating, low-profile SOP Advance packaging, and guaranteed avalanche energy - making it the only viable option among the three for thermally demanding, high-voltage, high-frequency DC-DC stages without compromising board area or ruggedness.

Availability

TPH1110ENH,L1Q is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and solar microinverter designs requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for TPH1110ENH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete transistor design and manufacturing.

The TPH1110ENH,L1Q belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching applications in compact, thermally constrained power supplies and motor drives.

FAQ

What is the maximum continuous drain current rating for TPH1110ENH,L1Q at 25 °C case temperature?

The TPH1110ENH,L1Q has a continuous drain current (I_D) rating of 13 A at T_c = 25 °C, as defined under absolute maximum ratings. This value assumes ideal heatsinking and must be derated linearly above 25 °C using R_th(ch-c) = 2.97 °C/W - for example, at T_c = 80 °C, the usable I_D drops to approximately 7.2 A. Always verify actual channel temperature via thermal simulation or measurement in the final layout.

Does TPH1110ENH,L1Q support gate drive from a 3.3 V microcontroller without a level shifter?

No - the TPH1110ENH,L1Q has a gate threshold voltage (V_th) range of 2.0–4.0 V and is not fully enhanced at 3.3 V. At V_GS = 3.3 V, R_DS(ON) increases significantly beyond specification, causing excessive conduction loss. The datasheet specifies R_DS(ON) = 96 mΩ only at V_GS = 10 V. A gate driver or level-shifting buffer is required for reliable operation with 3.3 V logic.

Is TPH1110ENH,L1Q suitable for use in avalanche mode during normal operation?

Yes - the TPH1110ENH,L1Q is characterized for single-pulse avalanche energy (E_AS) of 33 mJ and is rated for unclamped inductive switching. However, avalanche operation should remain occasional and transient (e.g., during fault conditions or startup surges). Continuous avalanche conduction is not recommended, as it accelerates wear-out and is not covered by warranty or reliability testing.

What is the thermal resistance from channel to ambient (R_th(ch-a)) for TPH1110ENH,L1Q on a standard FR-4 PCB?

Per the datasheet, R_th(ch-a) = 78.1 °C/W for TPH1110ENH,L1Q mounted on a glass-epoxy board (configuration "b", Figure 5.2). This value assumes minimal copper area (no thermal pad extension) and natural convection. With a 100 mm² exposed drain pad connected to 2 oz internal ground plane, measured R_th(ch-a) typically improves to ~40–50 °C/W - always validate with thermal imaging or power cycling tests in your specific layout.

Can TPH1110ENH,L1Q replace older Toshiba TPH1R103NL in a 200 V design?

No - the TPH1R103NL is a 30 V MOSFET (R_DS(ON) = 1.1 mΩ), incompatible with 200 V applications. Substituting it for TPH1110ENH,L1Q would cause immediate breakdown. The correct comparison is within the 200 V family: TPH1110ENH,L1Q replaces earlier TPH1R203NH (200 V, 120 mΩ) with 20% lower R_DS(ON) and improved switching charge, offering measurable efficiency gain in existing 200 V designs.