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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPH12008NH,L1Q

Name: TPH12008NH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH12008NH,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPH12008NH,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPH12008NH,L1Q.pdf

Description:: MOSFET N-CH 80V 24A 8SOP

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Product details

Overview

TPH12008NH,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET in SOP Advance package, rated for 80 V V_DSS, 10.1 mΩ R_DS(ON) at V_GS = 10 V, and 44 A DC drain current. It serves as a high-efficiency synchronous rectifier or main switch in compact DC-DC converters and switching voltage regulators.

For engineers reviewing the TPH12008NH,L1Q datasheet, TPH12008NH,L1Q pinout, TPH12008NH,L1Q application, or TPH12008NH,L1Q equivalent, key selection criteria include its low gate charge (8.1 nC typ.), fast switching capability, thermal resistance (R_th(ch-c) = 2.6 °C/W), and validated performance in motor driver half-bridge legs under 24 A pulsed load.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low on-resistance and high cell density in a surface-mount SOP Advance package. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while its 1490 pF input capacitance (C_iss) and 16 pF reverse transfer capacitance (C_rss) support stable high-frequency operation up to 1 MHz.

The device features integrated body diode with V_DSF = −1.2 V at 24 A and supports single-pulse avalanche energy of 58 mJ. Thermal design is enabled by channel-to-case resistance of 2.6 °C/W and defined safe operating area (SOA) curves up to T_ch = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin.
R_DS(ON)	10.1 mΩ (typ.) at V_GS = 10 V - Enables <1 W conduction loss at 32 A DC, critical for thermally constrained PCBs.
Q_SW	8.1 nC (typ.) - Low total switching charge reduces gate drive power and EMI in >500 kHz converters.
I_D (DC)	44 A - Sustained current rating at T_c = 25 °C; derates to 24 A at T_c = 100 °C per SOA curve.
E_AS	58 mJ - Avalanche energy rating enables robustness against inductive switching transients without external snubbers.
R_th(ch-c)	2.6 °C/W - Confirmed thermal path from channel to case; allows direct heatsinking via exposed drain pads.

Pinout & Package

TPH12008NH,L1Q uses the SOP Advance package (TOSHIBA designation: 2-5Q1S), featuring an exposed drain pad for thermal and electrical connection. The 8-pin configuration integrates multiple parallel drain terminals and dual-source leads to minimize parasitic inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node; low-inductance triple bond-wire path reduces switching oscillation in high-dI/dt applications.
4	Gate	Control terminal; gate resistance r_g = 1.1 Ω (typ.) limits ringing and simplifies RC gate-drive tuning.
5, 6, 7, 8	Drain	Parallel drain terminals connected to exposed copper pad; enables >90% of package footprint to serve as thermal interface and current return path.

Key Features

Feature	Design Value
U-MOS-H trench architecture	Delivers 10.1 mΩ R_DS(ON) in SOP Advance - 35% lower on-resistance than prior-generation U-MOS-V in same footprint.
Low Q_SW/Q_g ratio	8.1 nC switching charge per 22 nC total gate charge - improves efficiency in hard-switched topologies by minimizing Miller plateau time.
Enhancement-mode V_th	2.0–4.0 V threshold range - ensures compatibility with 3.3 V and 5 V microcontroller GPIOs without level-shifting.
Body diode recovery	V_DSF = −1.2 V at 24 A with no specified reverse recovery time - optimized for synchronous rectification with minimal reverse conduction loss.

Applications

DC-DC Converters	Switching Voltage Regulators
Use Scenario: 12 V to 1.2 V point-of-load converter in server CPU VRMs operating at 600 kHz switching frequency. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET with gate driven by dedicated PWM controller. Use Value: 10.1 mΩ R_DS(ON) and 8.1 nC Q_SW reduce conduction + switching losses by 22% vs. comparable 12 V-input MOSFETs.	Use Scenario: Adjustable buck regulator for FPGA core supply delivering up to 40 A continuous output. IC Role / Device Role / Timing Role: Main power switch in high-current buck stage with external current-sense feedback. Use Value: 44 A DC rating and 2.6 °C/W R_th(ch-c) allow full-load operation without forced air cooling on 2-layer PCBs.
Motor Drivers	Industrial Power Supplies
Use Scenario: Half-bridge leg in 24 V BLDC motor controller driving 300 W fan loads. IC Role / Device Role / Timing Role: Low-side switch with gate driven by isolated gate driver IC. Use Value: 97 A pulsed drain current rating and 58 mJ avalanche energy withstand commutation spikes without clamping diodes.	Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier with 92% target efficiency. IC Role / Device Role / Timing Role: Output rectifier MOSFET synchronized to primary-side transformer duty cycle. Use Value: −1.2 V body diode forward voltage and low C_rss (16 pF) minimize reverse recovery loss and EMI during zero-voltage switching transitions.

DC-DC Converters

Switching Voltage Regulators

Use Scenario: 12 V to 1.2 V point-of-load converter in server CPU VRMs operating at 600 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET with gate driven by dedicated PWM controller.

Use Value: 10.1 mΩ R_DS(ON) and 8.1 nC Q_SW reduce conduction + switching losses by 22% vs. comparable 12 V-input MOSFETs.

Use Scenario: Adjustable buck regulator for FPGA core supply delivering up to 40 A continuous output.

IC Role / Device Role / Timing Role: Main power switch in high-current buck stage with external current-sense feedback.

Use Value: 44 A DC rating and 2.6 °C/W R_th(ch-c) allow full-load operation without forced air cooling on 2-layer PCBs.

Motor Drivers

Industrial Power Supplies

Use Scenario: Half-bridge leg in 24 V BLDC motor controller driving 300 W fan loads.

IC Role / Device Role / Timing Role: Low-side switch with gate driven by isolated gate driver IC.

Use Value: 97 A pulsed drain current rating and 58 mJ avalanche energy withstand commutation spikes without clamping diodes.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier with 92% target efficiency.

IC Role / Device Role / Timing Role: Output rectifier MOSFET synchronized to primary-side transformer duty cycle.

Use Value: −1.2 V body diode forward voltage and low C_rss (16 pF) minimize reverse recovery loss and EMI during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7480TRPBF	R_DS(ON) = 11.5 mΩ (V_GS = 10 V); Q_g = 25 nC; SO-8 package with non-exposed drain.	Higher conduction loss and no thermal pad - requires larger copper area for equivalent thermal performance.	Prefer TPH12008NH,L1Q where board space and thermal budget are constrained.
DMN6008LK3-13	R_DS(ON) = 9.5 mΩ (V_GS = 10 V); Q_SW = 9.2 nC; 8-pin PowerDI 5060 package with exposed drain.	Slightly lower R_DS(ON) but higher gate charge - trade-off favors TPH12008NH,L1Q in high-frequency designs.	Select TPH12008NH,L1Q when optimizing for switching loss in >300 kHz applications.

Compared with IRF7480TRPBF and DMN6008LK3-13, the TPH12008NH,L1Q delivers superior thermal resistance (2.6 °C/W vs. ≥3.5 °C/W) and lower switching charge per unit on-resistance - making it optimal for compact, high-efficiency DC-DC stages where layout area and thermal management are critical.

Availability

TPH12008NH,L1Q is available at Aetrix Electronics and suitable for DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across industrial and computing OEM programs.

Supply support for TPH12008NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, miniaturization, and energy efficiency.

The TPH12008NH,L1Q belongs to Toshiba's U-MOS-H series of high-density trench MOSFETs, engineered specifically for high-frequency, high-current power conversion in space-constrained applications such as server VRMs and industrial motor drives.

FAQ

What is the maximum continuous drain current rating for TPH12008NH,L1Q at 100°C case temperature?

The TPH12008NH,L1Q supports 24 A DC drain current at T_c = 100 °C, as confirmed by its Safe Operating Area (SOA) curve and thermal derating data. This value reflects sustained operation with adequate heatsinking and accounts for R_DS(ON) increase with temperature. At T_c = 25 °C, the rating is 44 A DC. Designers must verify junction temperature using R_th(ch-c) = 2.6 °C/W and actual power dissipation.

Does TPH12008NH,L1Q have a built-in body diode, and what is its forward voltage?

Yes, the TPH12008NH,L1Q includes an integrated body diode with a typical forward voltage (V_DSF) of −1.2 V at I_DR = 24 A and V_GS = 0 V. This diode is characterized for reverse conduction in synchronous rectifier configurations and exhibits no specified reverse recovery time - indicating optimization for low-loss freewheeling in buck and half-bridge topologies.

What is the gate threshold voltage range for TPH12008NH,L1Q, and how does it affect drive compatibility?

The TPH12008NH,L1Q has a gate threshold voltage (V_th) range of 2.0 to 4.0 V at V_DS = 10 V and I_D = 0.3 mA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic-level gate drivers, eliminating need for external level shifters. The upper limit prevents unintended turn-on from noise, while the lower limit guarantees activation even with marginal drive voltage margins.

Can TPH12008NH,L1Q be used in avalanche-rated applications, and what is its single-pulse energy rating?

Yes, the TPH12008NH,L1Q is rated for single-pulse avalanche operation with E_AS = 58 mJ under specified test conditions (V_DD ≈ 60 V, I_AR = 24 A, L = 0.086 mH). This rating validates its use in inductive switching circuits like motor drivers and relay drivers where voltage overshoot may occur. Continuous avalanche operation is not supported - only transient events within the SOA limits.

What package type does TPH12008NH,L1Q use, and how does its thermal design differ from standard SO-8?

The TPH12008NH,L1Q uses the SOP Advance package (TOSHIBA 2-5Q1S), which features an exposed drain pad on the bottom surface for direct thermal coupling to the PCB. Unlike standard SO-8, this construction achieves R_th(ch-c) = 2.6 °C/W - over 40% better than conventional SO-8 packages - enabling higher power density without external heatsinks in thermally demanding applications.

TPH12008NH,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12.3mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 48W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP Advance (5x5)

TPH12008NH,L1Q FAQ

1.How can I place an order for TPH12008NH,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPH12008NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPH12008NH,L1Q reliable?

The price and inventory of TPH12008NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH12008NH,L1Q is usually 5 days.

3.What payment methods are accepted for TPH12008NH,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH12008NH,L1Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPH12008NH,L1Q?

TPH12008NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPH12008NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPH12008NH,L1Q?

For technical support, including TPH12008NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH12008NH,L1Q requirements.

6.How does Aetrix verify that TPH12008NH,L1Q is sourced from the original manufacturer or authorized distributors?

All TPH12008NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH12008NH,L1Q meets industry standards.

7.What is the process for return or replacement of TPH12008NH,L1Q?

All TPH12008NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH12008NH,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPH12008NH,L1Q part is unused and in its original packaging.

Return procedure for TPH12008NH,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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