My Inquiry
My Account
Toshiba Semiconductor and Storage TPH14006NH,L1Q
- Part No.:
- TPH14006NH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPH14006NH,L1Q.pdf
- Description:
- MOSFET N CH 60V 14A 8-SOP ADV
- Quantity:
- Payment:
- Shipping:
Inventory:4,380
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPH14006NH,L1Q from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers RDS(ON) = 11 mΩ (typ.) at VGS = 10 V, QSW = 6.3 nC (typ.), and supports 60 V VDSS, 34 A continuous drain current, and 150 °C channel temperature operation.
For engineers reviewing the TPH14006NH,L1Q datasheet, TPH14006NH,L1Q pinout, TPH14006NH,L1Q application, or TPH14006NH,L1Q equivalent, this device is selected for compact, high-frequency power stages where low conduction loss, fast switching, and thermal reliability under pulsed loads are critical design requirements.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low RDS(ON) and gate charge simultaneously. Its enhancement-mode threshold voltage (Vth = 2.0–4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while its optimized capacitance profile (Ciss = 1000 pF typ., Crss = 25 pF typ.) minimizes Miller-induced switching delays.
The device uses an SOP Advance (2-5Q1S) surface-mount package with thermally enhanced drain-source layout-pins 5–8 are internally paralleled drains, and pins 1–3 form a common source-enabling efficient heat transfer to PCB copper and supporting high-current pulse operation up to IDP = 42 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage compatible with 48 V bus systems and industrial 24–36 V rails. |
| RDS(ON) (VGS = 10 V) | 11 mΩ (typ.) - Enables ≤0.5 W conduction loss at 7 A DC, reducing thermal load in compact converters. |
| QSW | 6.3 nC (typ.) - Supports >1 MHz switching in synchronous buck topologies with minimal gate drive power. |
| ID (DC) | 34 A - Sustains continuous output current in motor H-bridge legs or high-current POL modules. |
| PD (Tc = 25 °C) | 32 W - Allows direct mounting on 2 oz copper with thermal vias for passive cooling in space-constrained designs. |
| Ciss | 1000 pF (typ.) - Balances EMI control and switching speed; low Crss (25 pF) reduces dv/dt-induced false turn-on risk. |
Pinout & Package
TPH14006NH,L1Q is housed in the SOP Advance (TOSHIBA 2-5Q1S) package-a 8-pin, small-outline, thin-profile surface-mount package with exposed drain pad for thermal performance. Dimensions: 5.0 × 6.0 × 1.0 mm (L × W × H), weight 0.069 g (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection; low-inductance parallel routing recommended for high di/dt paths. |
| 4 | Gate | Control terminal; requires <2.0 Ω series resistance to damp ringing and limit peak gate current. |
| 5, 6, 7, 8 | Drain | Internally paralleled drain terminals; must be soldered to large copper pour for thermal dissipation and current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench structure | Enables simultaneous optimization of RDS(ON) and Qg, improving figure-of-merit (RDS(ON) × Qg) by ~25% vs. prior U-MOS generations. |
| Low gate-drain charge (Qgd) | 4.8 nC (typ.) - Reduces Miller plateau duration, enabling faster turn-off and tighter dead-time control in half-bridge configurations. |
| Enhancement-mode Vth | 2.0–4.0 V - Ensures guaranteed turn-off at 0 V gate bias and robust immunity to noise-induced conduction in noisy automotive/industrial environments. |
| Low leakage (IDSS) | ≤10 µA at VDS = 60 V - Minimizes standby power loss in always-on systems such as battery-backed controllers or IoT edge nodes. |
Applications
| Switching Voltage Regulators | Motor Drivers |
|---|---|
Use Scenario: High-density point-of-load (POL) converters supplying FPGA core voltage (0.8–1.2 V) at up to 20 A. IC Role / Device Role / Timing Role: Synchronous high-side switch in 500 kHz–1 MHz buck converter; handles 34 A peak inductor current with minimal voltage drop. Use Value: 11 mΩ RDS(ON) limits conduction loss to <0.8 W at full load, enabling single-layer thermal relief without heatsink. |
Use Scenario: 24 V brushed DC motor driver in industrial automation actuators requiring bidirectional control and regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; commutates 14 A continuous motor current with fast 5.5 ns fall time. Use Value: 6.3 nC QSW enables clean PWM edges at 20 kHz, minimizing audible noise and torque ripple during speed modulation. |
| DC-DC Converters | Power Supply Units |
Use Scenario: Isolated forward or active-clamp forward converter secondary-side synchronous rectifier operating at 300 kHz. IC Role / Device Role / Timing Role: Self-driven synchronous rectifier; leverages body diode conduction to initiate gate turn-on via transformer-coupled gate signal. Use Value: Low Vth (2.0 V min) ensures reliable self-drive activation even with reduced gate voltage margin at light loads. |
Use Scenario: AC-DC adapter primary-side switching transistor in quasi-resonant flyback topology delivering 65 W at universal input. IC Role / Device Role / Timing Role: Main switching FET handling 60 V reflected output voltage and 42 A pulsed drain current during ZVS transitions. Use Value: 53 mJ single-pulse avalanche energy rating allows safe operation during transient overvoltage events without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQH060P03 | RDS(ON) = 6.0 mΩ @ VGS = 10 V; higher Qg = 19 nC; TO-252 package (larger footprint, higher Rth(ch-a)). | Better conduction efficiency but slower switching; suited for lower-frequency (<300 kHz), higher-current applications where thermal mass dominates. | Select when minimizing steady-state loss outweighs switching loss and board area constraints. |
| Infineon BSC014N06LS6 | RDS(ON) = 1.4 mΩ @ VGS = 10 V; QSW = 12.5 nC; PG-TSDSON-8 package with exposed drain; higher cost and larger die size. | Superior RDS(ON) enables >50 A operation but demands more aggressive gate drive and layout due to higher dV/dt sensitivity. | Choose for ultra-high-efficiency server VRMs where 1.4 mΩ loss reduction justifies added complexity and cost. |
Compared with RQH060P03 and BSC014N06LS6, the TPH14006NH,L1Q offers balanced performance in a compact SOP Advance package-delivering best-in-class RDS(ON) × QSW product for mid-power, high-frequency applications where PCB area, thermal management, and gate drive simplicity are jointly constrained.
Availability
TPH14006NH,L1Q is available at Aetrix Electronics and suitable for switching voltage regulators, motor drivers, and DC-DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for TPH14006NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors and power devices, with global leadership in trench-MOSFET technology and automotive-grade reliability.
The TPH14006NH,L1Q belongs to Toshiba's U-MOSⅧ-H family-engineered specifically for high-efficiency, high-frequency power conversion in consumer, industrial, and computing applications where compact size and thermal robustness are essential.
FAQ
What is the maximum continuous drain current rating for TPH14006NH,L1Q?
The TPH14006NH,L1Q has a maximum continuous drain current (ID) of 34 A at Tc = 25 °C. This rating assumes proper PCB thermal design with adequate copper area and thermal vias. At higher case temperatures or with limited copper, derating applies per the Rth(ch-c) = 3.91 °C/W specification.
Does TPH14006NH,L1Q support logic-level gate drive?
The TPH14006NH,L1Q features an enhancement-mode gate with Vth = 2.0–4.0 V, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, full RDS(ON) performance (11 mΩ) requires VGS ≥ 10 V; operation at 4.5 V yields higher on-resistance (~33 mΩ max) and increased conduction loss.
What is the avalanche capability of TPH14006NH,L1Q?
The TPH14006NH,L1Q is rated for 53 mJ single-pulse avalanche energy (EAS) under specified test conditions (VDD = 24 V, IAR = 14 A, L = 0.38 mH). This capability supports robustness against inductive switching transients in motor and relay drive circuits without requiring external clamping components.
How is thermal performance characterized for TPH14006NH,L1Q?
TPH14006NH,L1Q specifies Rth(ch-c) = 3.91 °C/W (max) for channel-to-case transfer, and Rth(ch-a) = 44.6 °C/W (max) on a standard glass-epoxy board (a). The SOP Advance package's exposed drain pads enable effective heat sinking to internal PCB layers, allowing sustained 32 W power dissipation with appropriate copper layout.
Is TPH14006NH,L1Q RoHS-compliant and halogen-free?
Yes, the TPH14006NH,L1Q meets RoHS Directive 2011/65/EU requirements and is halogen-free per J-STD-709. Compliance documentation-including material declarations and test reports-is available through Toshiba's official product portal and authorized distribution channels for TPH14006NH,L1Q.
TPH14006NH,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta), 32W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP Advance (5x5)
TPH14006NH,L1Q FAQ
1.How can I place an order for TPH14006NH,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPH14006NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPH14006NH,L1Q reliable?
The price and inventory of TPH14006NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH14006NH,L1Q is usually 5 days.
3.What payment methods are accepted for TPH14006NH,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH14006NH,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPH14006NH,L1Q?
TPH14006NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPH14006NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPH14006NH,L1Q?
For technical support, including TPH14006NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH14006NH,L1Q requirements.
6.How does Aetrix verify that TPH14006NH,L1Q is sourced from the original manufacturer or authorized distributors?
All TPH14006NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH14006NH,L1Q meets industry standards.
7.What is the process for return or replacement of TPH14006NH,L1Q?
All TPH14006NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH14006NH,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPH14006NH,L1Q part is unused and in its original packaging.
Return procedure for TPH14006NH,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPH14006NH,L1Q Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
