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Toshiba Semiconductor and Storage TPH1R204PL,L1Q
- Part No.:
- TPH1R204PL,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPH1R204PL,L1Q.pdf
- Description:
- MOSFET N-CH 40V 150A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,414
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Product details
Overview
TPH1R204PL,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-current, low-voltage switching in synchronous buck converters. It delivers RDS(ON) = 1.0 mΩ (typ.) at VGS = 10 V, QSW = 17 nC (typ.), and supports continuous drain current up to 150 A (Tc = 25 °C), enabling high-efficiency DC-DC conversion in server VRMs and GPU power stages.
For engineers reviewing the TPH1R204PL,L1Q datasheet, TPH1R204PL,L1Q pinout, TPH1R204PL,L1Q application, or TPH1R204PL,L1Q equivalent, key selection criteria include its ultra-low on-resistance, fast switching with minimal gate charge, thermal performance on standard PCBs, and SOP Advance package compatibility with high-density board layouts.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize conduction and switching losses simultaneously. Its optimized cell layout achieves low RDS(ON) × Qg figure-of-merit (FoM) while maintaining robust avalanche capability (EAS = 127 mJ) and tight Vth distribution (1.4–2.4 V).
The device operates in enhancement mode with gate threshold voltage specified at ID = 0.5 mA, and features integrated body diode with trr = 46 ns and Qrr = 46 nC under defined test conditions-critical for minimizing shoot-through loss and EMI in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(ON) | 1.0 mΩ (typ.) at VGS = 10 V - enables <1 W conduction loss at 100 A in 12 V input VRMs |
| QSW | 17 nC (typ.) - reduces gate drive power and enables >1 MHz operation with moderate driver strength |
| ID (DC) | 150 A (Tc = 25 °C) - supports high-current phases without parallel devices in compact VRM designs |
| EAS | 127 mJ (VDD = 32 V) - provides margin against inductive switching stress in point-of-load converters |
| Rth(ch-a) | 50 °C/W (on glass-epoxy board a) - defines thermal derating for natural-convection cooling in space-constrained modules |
| V(BR)DSS | 40 V - rated for 12 V and 24 V input systems with 2× safety margin against transient overvoltage |
| Qoss | 56 nC (typ.) - lowers turn-off energy and improves light-load efficiency in CCM/DCM hybrid control |
Pinout & Package
SOP Advance (TOSHIBA package code: 2-5Q1S) - 8-pin surface-mount package with exposed drain paddle for enhanced thermal conduction. Pin 1–3: Source; Pin 4: Gate; Pins 5–8: Drain (internally connected to thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Low-inductance source connection for high di/dt return path; tied to PCB ground plane via multiple vias |
| 4 | Gate | Control terminal requiring <2.4 V threshold; gate resistance rg = 0.6 Ω (typ.) impacts Miller plateau timing |
| 5, 6, 7, 8 + thermal pad | Drain | Main power output node; electrically and thermally connected to large copper area for heat dissipation and low loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) | 1.0 mΩ typ. at 10 V gate drive - reduces I²R loss by >30% vs. comparable 3.5 mΩ MOSFETs in 100 A applications |
| Optimized switching charge | QSW = 17 nC and Qoss = 56 nC - enables efficient operation up to 2 MHz with minimal dead-time penalty |
| Robust body diode | trr = 46 ns, Qrr = 46 nC - limits reverse recovery loss and voltage overshoot during synchronous rectification |
| High avalanche energy rating | EAS = 127 mJ - withstands single-pulse inductive transients common in multiphase VRM load dumps |
| Thermally enhanced package | Rth(ch-c) = 1.13 °C/W - allows direct mounting to heatsink or thermal pad for >100 W power dissipation |
Applications
| Server Voltage Regulator Modules | GPU Power Delivery Systems |
|---|---|
Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU cores at ≤1.2 V with >500 A peak demand. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectification topology, operating at 300–1000 kHz with precise PWM timing. Use Value: 1.0 mΩ RDS(ON) minimizes conduction loss at full load; low QSW enables fast transient response without excessive gate drive loss. |
Use Scenario: Compact, high-density power stages on graphics card PCBs where thermal headroom and board area are constrained. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase interleaved converter, handling bidirectional current during light-load DCM. Use Value: Fast body diode recovery (46 ns trr) suppresses voltage spikes during freewheeling; SOP Advance footprint simplifies layout in tight pitch designs. |
| Industrial DC-DC Converters | Telecom Point-of-Load Modules |
Use Scenario: 48 V input to 3.3/5/12 V isolated or non-isolated converters in programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: Main switching element in primary-side synchronous rectifier or secondary-side synchronous FET in active clamp forward topology. Use Value: 40 V V(BR)DSS provides sufficient margin for 48 V bus transients; 150 A DC rating supports burst-mode operation with high peak currents. |
Use Scenario: High-efficiency, low-noise POL regulators powering ASICs, FPGAs, and SerDes interfaces in 5G baseband units. IC Role / Device Role / Timing Role: High-frequency switching FET in 1–3 MHz buck regulator, requiring minimal switching loss and EMI control. Use Value: Low Ciss (5500 pF typ.) and Crss (93 pF typ.) reduce capacitive coupling and improve noise immunity; small gate charge eases driver IC selection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(ON) = 1.3 mΩ (VGS = 4.5 V), Qg = 22 nC - higher gate charge and slightly higher on-resistance at low gate drive | Better 4.5 V drive capability but lower current rating (120 A); suited for 5 V gate drive systems with relaxed efficiency targets | Select when gate drive voltage is limited to 4.5–5 V and thermal budget permits ~15% higher conduction loss. |
| DMTH4007LPSQ | RDS(ON) = 0.95 mΩ (VGS = 10 V), Qg = 25 nC - marginally lower RDS(ON) but significantly higher switching charge | Higher EAS (210 mJ) and larger PQFN5x6 package - better for ruggedized industrial use but requires more board area | Prefer for applications demanding higher avalanche robustness and where layout space allows larger footprint. |
Compared with IRLHS6342TRPBF and DMTH4007LPSQ, the TPH1R204PL,L1Q offers the best balance of ultra-low RDS(ON), minimal QSW, and compact SOP Advance packaging-making it optimal for high-frequency, high-current VRMs where thermal density and switching efficiency are co-critical.
Availability
TPH1R204PL,L1Q is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery systems, and telecom point-of-load converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for TPH1R204PL,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on efficiency, reliability, and miniaturization.
The TPH1R204PL,L1Q belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and computing infrastructure.
FAQ
What is the maximum continuous drain current rating for the TPH1R204PL,L1Q?
The TPH1R204PL,L1Q has a maximum continuous drain current (ID) of 150 A at case temperature Tc = 25 °C. This rating assumes adequate heatsinking; derating applies above 25 °C per the Rth(ch-c) = 1.13 °C/W specification. At ambient temperature (Ta = 25 °C) on a standard glass-epoxy board, the practical DC current limit is ~40 A due to higher thermal resistance.
Does the TPH1R204PL,L1Q support 4.5 V gate drive for logic-level operation?
Yes, the TPH1R204PL,L1Q is characterized down to VGS = 4.5 V, with RDS(ON) = 1.5 mΩ (typ.) at ID = 50 A. Its gate threshold voltage range (1.4–2.4 V) ensures reliable turn-on with 4.5 V logic drivers, though full 10 V drive is recommended to achieve the rated 1.0 mΩ RDS(ON) and minimize conduction loss.
What is the avalanche energy rating of the TPH1R204PL,L1Q and how is it tested?
The TPH1R204PL,L1Q is rated for single-pulse avalanche energy (EAS) of 127 mJ, measured under conditions of VDD = 32 V, Tch = 25 °C (initial), L = 6.8 µH, and IAS = 120 A. This rating reflects capability to absorb inductive switching energy without failure, critical for reliability in hard-switched VRM phases.
How does the body diode performance of the TPH1R204PL,L1Q compare to standard MOSFETs?
The TPH1R204PL,L1Q features an optimized body diode with reverse recovery time (trr) of 46 ns and reverse recovery charge (Qrr) of 46 nC under VR = 20 V, IDR = 37.5 A, and −dIDR/dt = 100 A/µs. This is significantly faster than legacy MOSFETs, reducing switching loss and EMI in synchronous rectification applications.
What package variants are available for the TPH1R204PL,L1Q and what is the difference?
The TPH1R204PL,L1Q is offered in two SOP Advance variants: TOSHIBA package code 2-5Q1S (weight 0.079 g, standard version) and 2-5W1A (weight 0.105 g, SOP Advance(N)). Both share identical pinout (1–3: Source; 4: Gate; 5–8 + thermal pad: Drain) and electrical specs, differing only in mold compound and thermal pad geometry for specific board assembly requirements.
TPH1R204PL,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSIX-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.24mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 74 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7200 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 960mW (Ta), 132W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP Advance (5x5)
TPH1R204PL,L1Q FAQ
1.How can I place an order for TPH1R204PL,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPH1R204PL,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPH1R204PL,L1Q reliable?
The price and inventory of TPH1R204PL,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH1R204PL,L1Q is usually 5 days.
3.What payment methods are accepted for TPH1R204PL,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH1R204PL,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPH1R204PL,L1Q?
TPH1R204PL,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPH1R204PL,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPH1R204PL,L1Q?
For technical support, including TPH1R204PL,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH1R204PL,L1Q requirements.
6.How does Aetrix verify that TPH1R204PL,L1Q is sourced from the original manufacturer or authorized distributors?
All TPH1R204PL,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH1R204PL,L1Q meets industry standards.
7.What is the process for return or replacement of TPH1R204PL,L1Q?
All TPH1R204PL,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH1R204PL,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPH1R204PL,L1Q part is unused and in its original packaging.
Return procedure for TPH1R204PL,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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