Toshiba Semiconductor and Storage TPH1R405PL,L1Q

Overview

TPH1R405PL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current synchronous rectifier or low-side switch in DC-DC converters. It delivers R_DS(ON) = 1 mΩ (typ.) at V_GS = 10 V, supports 120 A DC drain current, and features Q_SW = 22 nC (typ.) for fast switching in high-frequency power stages.

For engineers reviewing the TPH1R405PL datasheet, TPH1R405PL pinout, TPH1R405PL application, or TPH1R405PL equivalent, this device is selected for high-efficiency 45 V-class power conversion where low conduction loss, controlled gate charge, and thermal robustness under high-current pulsed operation are critical design requirements.

Technical Context

The TPH1R405PL employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve ultra-low on-resistance while maintaining strong avalanche ruggedness (E_AS = 114 mJ) and stable threshold voltage (V_th = 1.4–2.4 V). Its dynamic characteristics-including C_iss = 4830 pF (typ.), C_oss = 1210 pF (typ.), and r_g = 0.37 Ω (typ.)-are optimized for hard-switched synchronous buck topologies operating up to 1 MHz.

Thermal design leverages the SOP Advance package with R_th(ch–c) = 1.13 °C/W, enabling high-power dissipation (P_D = 132 W at T_c = 25 °C) when mounted on copper-clad PCBs. The device operates within T_ch ≤ 175 °C and supports V_DSS = 45 V with guaranteed breakdown margin (V_(BR)DSS ≥ 45 V).

Key Specifications

Pinout & Package

TPH1R405PL uses the SOP Advance surface-mount package (TOSHIBA designation: 2-5Q1S), featuring exposed drain pads for enhanced thermal performance and compact 5.0 × 6.0 mm footprint. The package weighs 0.079 g (typ.) and is RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL1404ZPBF and STL220N4LF8AG, the TPH1R405PL offers best-in-class balance of ultra-low R_DS(ON), moderate Q_g, and thermally optimized SOP Advance packaging-making it optimal for high-frequency, high-current DC-DC converters where both conduction and switching losses must be minimized simultaneously.

Availability

TPH1R405PL is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for TPH1R405PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on efficiency, reliability, and miniaturization.

The TPH1R405PL belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, industrial, and automotive auxiliary power systems.

FAQ

What is the maximum continuous drain current rating for the TPH1R405PL?

The TPH1R405PL is rated for 120 A DC drain current at T_c = 25 °C. This rating is package-limited-not silicon-limited-and assumes proper PCB copper area for thermal conduction. At elevated case temperatures, current must be derated per the Safe Operating Area curve in Figure 8.16 of the datasheet. For sustained 120 A operation, thermal design must maintain T_c ≤ 25 °C using multilayer PCBs with internal ground planes and thermal vias. The TPH1R405PL supports up to 500 A pulsed current for t ≤ 100 µs.

Does the TPH1R405PL support logic-level gate drive?

The TPH1R405PL has an enhancement-mode threshold voltage of 1.4–2.4 V (V_DS = 10 V, I_D = 0.5 mA), making it compatible with 3.3 V and 5 V logic-level gate drivers. However, its R_DS(ON) is specified at V_GS = 10 V (1 mΩ typ.), and drops to 2.3 mΩ max at V_GS = 4.5 V. For optimal efficiency, a 10 V gate drive is recommended; if using 3.3 V or 5 V drive, verify conduction loss impact in your specific thermal environment. The TPH1R405PL does not guarantee full enhancement below 4.5 V.

What is the avalanche energy rating of the TPH1R405PL and how is it tested?

The TPH1R405PL has a single-pulse avalanche energy rating of 114 mJ (E_AS) under test conditions of V_DD = 36 V, T_ch = 25 °C (initial), L = 6.1 µH, and I_AS = 120 A. This rating reflects the device's ability to absorb inductive energy during unclamped inductive switching events-common in motor drive freewheeling or converter dead-time transitions. The test is standardized per JEDEC JESD24-1 and validates ruggedness without permanent parameter shift. Repeated avalanche operation is not recommended; the TPH1R405PL should be operated within SOA limits for long-term reliability.

How does the SOP Advance package of the TPH1R405PL improve thermal performance compared to standard SO-8?

The SOP Advance package (TOSHIBA 2-5Q1S) used by the TPH1R405PL features an exposed drain paddle and optimized internal leadframe geometry, achieving R_th(ch–c) = 1.13 °C/W-over 3× better than standard SO-8 (typically ~3.5–4.0 °C/W). This enables 132 W power dissipation at T_c = 25 °C, versus ~35–40 W for conventional SO-8. The package also provides lower parasitic inductance due to shorter internal bond wires and parallel source terminals (pins 1–3), critical for minimizing voltage overshoot in high-di/dt applications. The TPH1R405PL's thermal advantage is fully realized only with adequate PCB copper area and thermal vias beneath the drain pad.

Can the TPH1R405PL be used as a synchronous rectifier in a 48 V input DC-DC converter?

Yes-the TPH1R405PL is explicitly suited for synchronous rectification in 48 V input DC-DC converters, including multiphase buck and LLC topologies. Its 45 V V_DSS rating provides sufficient margin over 48 V nominal inputs (with transient spikes up to ~60 V), while its 1 mΩ R_DS(ON) and low Q_oss (67 nC) reduce both conduction and switching losses. The device's fast body diode (t_rr = 49 ns, Q_rr = 54 nC) minimizes reverse recovery loss when used in asymmetric control schemes. For reliable operation, ensure gate drive timing avoids shoot-through and maintains V_GS ≥ 8 V during conduction. The TPH1R405PL is widely deployed in this role across telecom and server power supplies.