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Toshiba Semiconductor and Storage TPH1R712MD,L1Q
- Part No.:
- TPH1R712MD,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPH1R712MD,L1Q.pdf
- Description:
- MOSFET P-CH 20V 60A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,557
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Product details
Overview
TPH1R712MD,L1Q from Toshiba Electronic Devices & Storage Corporation is a silicon P-channel MOSFET (U-MOSⅧ) designed for high-current, low-voltage power switching in battery protection and load management circuits. It delivers RDS(ON) = 1.35 mΩ (typ.) at VGS = −4.5 V, supports −60 A DC drain current, and features an enhancement-mode threshold voltage of −0.5 to −1.2 V - enabling robust control in Li-ion battery cutoff applications.
For engineers reviewing the TPH1R712MD,L1Q datasheet, TPH1R712MD,L1Q pinout, TPH1R712MD,L1Q application, or TPH1R712MD,L1Q equivalent, this device is selected for high-efficiency, thermally constrained power switches where low on-resistance, tight gate threshold control, and avalanche ruggedness are critical design requirements.
Technical Context
This P-channel MOSFET uses Toshiba's U-MOSⅧ trench-gate process to achieve ultra-low RDS(ON) while maintaining stable Vth and low gate charge (Qg = 182 nC). Its −20 V VDSS rating and −60 A ID rating target secondary battery systems operating below 20 V.
The device integrates a body diode with VDSF = 1.2 V (max) at −60 A and supports single-pulse avalanche energy up to 468 mJ, confirming suitability for transient overvoltage conditions in portable power paths without external clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V - Maximum blocking voltage for Li-ion battery stack monitoring and reverse-polarity protection |
| RDS(ON) @ VGS = −4.5 V | 1.35 mΩ (typ.) - Enables <100 mW conduction loss at 30 A, critical for thermal management in compact battery packs |
| ID (DC) | −60 A - Supports high-current load switching in power banks and multi-cell battery management systems |
| Vth | −0.5 to −1.2 V - Ensures reliable turn-on with standard logic-level gate drivers and low-voltage microcontrollers |
| Qg | 182 nC (typ.) - Determines gate drive power and switching speed in high-frequency PWM load control |
| EAS | 468 mJ - Confirms ruggedness against inductive kickback in motor-driven or relay-based battery disconnects |
| Rth(ch-c) | 1.60 °C/W - Enables direct heatsinking to PCB copper or metal-core substrates for sustained 60 A operation |
Pinout & Package
TPH1R712MD,L1Q is housed in the SOP Advance (TOSHIBA: 2-5Q1S) surface-mount package - an 8-pin, thermally enhanced leadframe package optimized for high-current power delivery and PCB heat spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; internally bonded to large copper paddle for low-inductance grounding |
| 4 | Gate | Control input requiring −4.5 V to fully enhance; ESD-sensitive node requiring layout guard ring |
| 5, 6, 7, 8 | Drain | Main high-side power path; connected to internal die backside for optimal thermal transfer to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) | 1.35 mΩ typ. at −4.5 V enables <50 mV drop at 37 A - eliminating need for parallel devices in 20 V/60 W systems |
| Enhancement-mode Vth | −0.5 to −1.2 V ensures compatibility with 3.3 V and 5 V microcontroller GPIOs without level-shifting circuitry |
| Low IDSS leakage | −10 µA max at −20 V VDS minimizes standby current in always-on battery protection ICs |
| Avalanche-rated | 468 mJ single-pulse energy rating allows safe operation during inductive load disconnection without snubbers |
| Thermally optimized package | SOP Advance footprint provides 1.60 °C/W channel-to-case resistance - 3× better than standard SO-8 for same board area |
Applications
| Lithium-Ion Battery Protection | Power Management Switch |
|---|---|
Use Scenario: Primary overcurrent and short-circuit cutoff in 2–4 cell Li-ion battery packs for power tools and e-bikes. IC Role / Device Role / Timing Role: High-side main switch controlled by battery protection IC (e.g., DW01A) to interrupt discharge path under fault. Use Value: 1.35 mΩ RDS(ON) limits voltage drop to <80 mV at 60 A, preserving pack voltage margin during peak load. |
Use Scenario: Load switching in USB-C PD power delivery modules requiring reverse-current blocking and hot-swap capability. IC Role / Device Role / Timing Role: P-channel high-side switch enabling controlled inrush limiting and bidirectional fault isolation. Use Value: −1.2 V max Vth guarantees full enhancement with 3.3 V logic, eliminating external gate pull-up resistors. |
| Smart Power Bank Control | Industrial Backup Power Switch |
Use Scenario: Dual-path power routing in portable power banks supporting simultaneous charging and discharging. IC Role / Device Role / Timing Role: Low-loss bidirectional switch managing current flow between battery and USB output ports. Use Value: Body diode forward voltage ≤1.2 V ensures minimal conduction loss during reverse current mode without external Schottky. |
Use Scenario: Hold-up power switching in industrial PLC I/O modules during AC mains interruption. IC Role / Device Role / Timing Role: High-reliability backup path switch activated by supervisor IC upon brownout detection. Use Value: 468 mJ avalanche energy rating sustains operation during 100 µs transients caused by relay coil de-energization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PBF | RDS(ON) = 20 mΩ @ −10 V; VDSS = −55 V; TO-220 package; higher on-resistance and larger footprint | Used in legacy 48 V telecom systems; unsuitable for space-constrained Li-ion packs due to thermal and size limitations | Select only when higher voltage rating and through-hole mounting are required; not recommended for new 20 V designs. |
| SI2301DS-T1-BE3 | RDS(ON) = 115 mΩ @ −4.5 V; SOT-23 package; 2.6 A rated; orders-of-magnitude lower current handling | Targeted at low-power logic-level switching in wearables; cannot support >5 A continuous loads | Acceptable only for sub-3 A signal switching; not a functional substitute for TPH1R712MD,L1Q's 60 A capability. |
Compared with IRF4905PBF and SI2301DS-T1-BE3, the TPH1R712MD,L1Q uniquely combines 60 A current capacity, milliohm-level RDS(ON), and SOP Advance thermal performance - making it irreplaceable in high-density, high-efficiency battery protection layouts where both conduction loss and PCB real estate are constrained.
Availability
TPH1R712MD,L1Q is available at Aetrix Electronics and suitable for lithium-ion battery protection, power management switches, and smart power bank control requiring stable component supply across production volumes from prototype to mass manufacturing.
Supply support for TPH1R712MD,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and miniaturization for industrial and consumer electronics.
The TPH1R712MD,L1Q belongs to Toshiba's U-MOSⅧ P-channel MOSFET product line, engineered specifically for ultra-low RDS(ON) power switching in space- and thermal-constrained battery-powered systems.
FAQ
What is the maximum continuous drain current rating for TPH1R712MD,L1Q?
The TPH1R712MD,L1Q is rated for −60 A DC drain current at Tc = 25 °C. This rating assumes proper PCB copper area for thermal dissipation; derating applies above 25 °C case temperature per the Rth(ch-c) = 1.60 °C/W specification. Actual system current capability depends on layout, ambient temperature, and airflow - the device itself supports sustained 60 A when mounted on ≥10 cm² of 2-oz copper with thermal vias.
Does TPH1R712MD,L1Q require a gate driver IC for microcontroller interfacing?
No, the TPH1R712MD,L1Q does not require an external gate driver IC when driven by 3.3 V or 5 V microcontrollers. Its enhancement-mode Vth range of −0.5 to −1.2 V ensures full turn-on with standard logic-level outputs. However, for fast switching (>100 kHz) or high dv/dt noise immunity, a dedicated gate driver improves rise/fall time consistency and reduces gate ringing - especially given its 182 nC total gate charge.
What is the significance of the "L1Q" suffix in TPH1R712MD,L1Q?
The "L1Q" suffix in TPH1R712MD,L1Q denotes Toshiba's tape-and-reel packaging option compliant with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and RoHS-compliant finish. It specifies 3,000 units per reel, 8 mm tape width, and embossed carrier tape - intended for automated SMT assembly. The base part TPH1R712MD is identical electrically and thermally; L1Q indicates the standardized production packaging format.
Can TPH1R712MD,L1Q be used in avalanche mode repeatedly?
The TPH1R712MD,L1Q is rated for single-pulse avalanche energy of 468 mJ - verified under defined test conditions (VDD = −16 V, IAS = −60 A, L = 100 µH). Repeated avalanche operation is not guaranteed and may accelerate wear-out. For designs requiring repetitive inductive switching, use external clamping (e.g., TVS or RCD snubber) to limit energy dissipation within the device's safe operating area - consult Toshiba's Reliability Handbook for lifetime estimation under repetitive stress.
How does the SOP Advance package improve thermal performance over standard SO-8?
The SOP Advance package of the TPH1R712MD,L1Q achieves 1.60 °C/W channel-to-case thermal resistance - approximately 3× better than standard SO-8 (typically ~4.5–5.0 °C/W). This results from an enlarged copper-exposed drain paddle, shorter internal bond wires, and optimized leadframe geometry. In practice, this allows the TPH1R712MD,L1Q to dissipate 78 W at Tc = 25 °C versus ~25 W for a typical SO-8 MOSFET under identical PCB conditions.
TPH1R712MD,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVI
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 30A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 182 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10900 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 78W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP Advance (5x5)
TPH1R712MD,L1Q FAQ
1.How can I place an order for TPH1R712MD,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPH1R712MD,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPH1R712MD,L1Q reliable?
The price and inventory of TPH1R712MD,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH1R712MD,L1Q is usually 5 days.
3.What payment methods are accepted for TPH1R712MD,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH1R712MD,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPH1R712MD,L1Q?
TPH1R712MD,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPH1R712MD,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPH1R712MD,L1Q?
For technical support, including TPH1R712MD,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH1R712MD,L1Q requirements.
6.How does Aetrix verify that TPH1R712MD,L1Q is sourced from the original manufacturer or authorized distributors?
All TPH1R712MD,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH1R712MD,L1Q meets industry standards.
7.What is the process for return or replacement of TPH1R712MD,L1Q?
All TPH1R712MD,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH1R712MD,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPH1R712MD,L1Q part is unused and in its original packaging.
Return procedure for TPH1R712MD,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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