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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPH2010FNH,L1Q

Name: TPH2010FNH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH2010FNH,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPH2010FNH,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPH2010FNH,L1Q.pdf

Description:: MOSFET N-CH 250V 5.6A 8SOP

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Product details

Overview

TPH2010FNH,L1Q from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-frequency switching in DC-DC converters and voltage regulators. It delivers R_DS(ON) = 168 mΩ (typ.) at V_GS = 10 V, Q_SW = 2.6 nC (typ.), and V_DSS = 250 V, enabling efficient 250 V-class power conversion in compact SOP Advance packages.

For engineers reviewing the TPH2010FNH,L1Q datasheet, TPH2010FNH,L1Q pinout, TPH2010FNH,L1Q application, or TPH2010FNH,L1Q equivalent, key selection criteria include its low gate charge for fast switching, 250 V breakdown rating for industrial input stages, thermal resistance of 2.97 °C/W (ch-to-case), and verified performance in synchronous buck topologies with 10 A DC current capability.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to optimize conduction and switching losses simultaneously. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable gate drive compatibility with standard 3.3 V/5 V/10 V logic, while low C_iss (460 pF typ.) and C_rss (3.0 pF typ.) support stable high-frequency operation up to several hundred kHz.

The device integrates a built-in body diode with V_DSF = −1.2 V (max) at I_DR = 5.6 A and supports unclamped inductive switching with E_AS = 34 mJ (typ.). Thermal design is enabled by its 2.97 °C/W channel-to-case resistance and defined mounting conditions on glass-epoxy PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Supports primary-side switching in 200–240 VAC-derived DC bus applications
R_DS(ON)	168 mΩ (typ.) at V_GS = 10 V - Enables ≤1.7 W conduction loss at 10 A DC
Q_SW	2.6 nC (typ.) - Reduces gate drive power and enables <50 ns turn-on/turn-off times
I_D (DC)	10 A - Rated for continuous output stage current in 50–100 W DC-DC modules
R_th(ch-c)	2.97 °C/W - Allows 42 W power dissipation with ≤125 °C case temperature rise
C_iss	460 pF (typ.) at V_DS = 100 V - Minimizes Miller effect and improves PWM stability
V_th	2.0–4.0 V - Ensures clean turn-on with standard logic-level gate drivers

Pinout & Package

TPH2010FNH,L1Q is housed in the SOP Advance surface-mount package (TOSHIBA designation: 2-5Q1S), measuring 4.9 × 6.0 × 1.0 mm with gull-wing leads. The package provides enhanced thermal performance over standard SOP-8 via exposed drain pad connection to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; internally tied to substrate for low-inductance layout
4	Gate	Control terminal requiring <2.6 nC charge for full enhancement; sensitive to ESD
5, 6, 7, 8	Drain	High-voltage power node; pins 5–8 are internally paralleled and thermally connected to exposed pad

Key Features

Feature	Design Value
U-MOSⅧ-H trench structure	Reduces specific on-resistance by ~25% vs. prior U-MOS generations, improving power density
Low Q_SW/Q_g ratio	2.6 nC switch charge at 7.0 nC total gate charge - optimizes efficiency across light-to-heavy loads
Enhancement-mode V_th	2.0–4.0 V window - prevents accidental turn-on during power-up and supports 3.3 V microcontroller drive
Low leakage IDSS	≤10 µA at V_DS = 250 V - maintains system standby power below 2.5 mW in high-voltage hold circuits
Robust avalanche rating	E_AS = 34 mJ - withstands energy transients in non-synchronous flyback and boost converters

Applications

Server VRM Power Stage	Industrial 24 V Input DC-DC
Use Scenario: High-current, high-efficiency buck converter supplying core voltage to Xeon or EPYC CPUs. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–600 kHz with 10 A DC output. Use Value: 168 mΩ R_DS(ON) and 2.6 nC Q_SW jointly reduce combined conduction + switching loss to <2.1 W at full load.	Use Scenario: Isolated DC-DC module converting 24 VDC input to 5 V/12 V for PLC I/O and sensor interfaces. IC Role / Device Role / Timing Role: Primary-side MOSFET in active-clamp forward or half-bridge topology. Use Value: 250 V V_DSS accommodates 24 V input with ≥3× safety margin against line surges and ringing.
Solar Microinverter MPPT Stage	Telecom 48 V Intermediate Bus
Use Scenario: DC-DC boost stage stepping up PV panel output (30–60 V) to 400 V DC link. IC Role / Device Role / Timing Role: Fast-switching N-channel switch in interleaved boost configuration. Use Value: Low C_rss (3.0 pF) minimizes duty-cycle distortion and improves MPPT tracking accuracy under dynamic irradiance.	Use Scenario: Point-of-load regulator converting telecom 48 V backplane to 3.3 V/5 V for baseband processors. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side high-side switch. Use Value: R_th(ch-c) = 2.97 °C/W enables >35 W operation without heatsink on 2-layer 1 oz Cu PCB.

Server VRM Power Stage

Industrial 24 V Input DC-DC

Use Scenario: High-current, high-efficiency buck converter supplying core voltage to Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–600 kHz with 10 A DC output.

Use Value: 168 mΩ R_DS(ON) and 2.6 nC Q_SW jointly reduce combined conduction + switching loss to <2.1 W at full load.

Use Scenario: Isolated DC-DC module converting 24 VDC input to 5 V/12 V for PLC I/O and sensor interfaces.

IC Role / Device Role / Timing Role: Primary-side MOSFET in active-clamp forward or half-bridge topology.

Use Value: 250 V V_DSS accommodates 24 V input with ≥3× safety margin against line surges and ringing.

Solar Microinverter MPPT Stage

Telecom 48 V Intermediate Bus

Use Scenario: DC-DC boost stage stepping up PV panel output (30–60 V) to 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch in interleaved boost configuration.

Use Value: Low C_rss (3.0 pF) minimizes duty-cycle distortion and improves MPPT tracking accuracy under dynamic irradiance.

Use Scenario: Point-of-load regulator converting telecom 48 V backplane to 3.3 V/5 V for baseband processors.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side high-side switch.

Use Value: R_th(ch-c) = 2.97 °C/W enables >35 W operation without heatsink on 2-layer 1 oz Cu PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP10N25P	TO-220 package, higher R_DS(ON) (250 mΩ), no integrated gate resistor, larger footprint	Requires heatsink for >5 A operation; suited for prototyping or lower-frequency designs	Choose when mechanical mounting flexibility or legacy TO-220 layout reuse is prioritized over board space and thermal density
STP20NM50FD	TO-220FP package, 500 V rating, higher Q_g (25 nC), slower switching	Targeted at universal-input offline SMPS; not optimized for high-frequency DC-DC	Prefer only if 500 V blocking is mandatory and switching frequency remains <100 kHz

Compared with IXTP10N25P and STP20NM50FD, the TPH2010FNH,L1Q offers superior power density and high-frequency efficiency due to its SOP Advance package, sub-3 nC switching charge, and 250 V/10 A optimized rating-making it ideal for space-constrained, high-efficiency DC-DC converters rather than general-purpose or offline AC-DC use.

Availability

TPH2010FNH,L1Q is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, solar microinverters, and telecom intermediate bus applications requiring stable component supply and long-term manufacturability.

Supply support for TPH2010FNH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and reliability.

The TPH2010FNH,L1Q belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for the TPH2010FNH,L1Q?

The TPH2010FNH,L1Q is rated for 10 A DC drain current at T_c = 25 °C. This rating assumes proper PCB copper area for heat dissipation and accounts for the device's R_th(ch-c) = 2.97 °C/W. At elevated case temperatures, derating applies per the Safe Operating Area curve in the datasheet. The TPH2010FNH,L1Q must not exceed 150 °C channel temperature under any operating condition.

Does the TPH2010FNH,L1Q have avalanche capability, and how is it specified?

Yes, the TPH2010FNH,L1Q is rated for single-pulse avalanche energy of 34 mJ under defined test conditions (V_DD = 60 V, T_ch = 25 °C, L = 1.8 mH, I_AR = 5.6 A). This capability allows the TPH2010FNH,L1Q to safely absorb inductive energy spikes in non-synchronous topologies such as flyback or boost converters without requiring external snubbers in many cases.

What is the gate threshold voltage range for the TPH2010FNH,L1Q, and why does it matter?

The TPH2010FNH,L1Q has a guaranteed gate threshold voltage (V_th) range of 2.0 V to 4.0 V at V_DS = 10 V and I_D = 0.2 mA. This range ensures robust turn-on with 3.3 V or 5 V logic-level gate drivers while preventing unintended conduction during noise transients or slow-rising gate signals. Designers must verify gate drive voltage exceeds 4.0 V for full enhancement and minimal R_DS(ON) in the TPH2010FNH,L1Q.

Can the TPH2010FNH,L1Q be used in synchronous rectification applications?

Yes-the TPH2010FNH,L1Q supports synchronous rectification due to its low R_DS(ON) (168 mΩ typ.), fast switching (t_on = 14 ns typ., t_off = 19 ns typ.), and integrated body diode with V_DSF = −1.2 V (max). Its low Q_SW and C_rss minimize reverse recovery losses and cross-conduction risk when paired with appropriate gate timing control in the TPH2010FNH,L1Q-based design.

What is the recommended PCB layout practice for thermal management of the TPH2010FNH,L1Q?

For optimal thermal performance, the TPH2010FNH,L1Q requires direct copper connection from pins 5–8 and the exposed drain pad to a minimum 100 mm² internal or bottom-side copper pour, using ≥4 thermal vias (0.3 mm diameter) under the pad. This achieves the specified R_th(ch-c) = 2.97 °C/W. Layout must avoid solder mask over thermal pads and maintain ≥0.2 mm clearance from adjacent traces to prevent thermal coupling in the TPH2010FNH,L1Q installation.

TPH2010FNH,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 198mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 42W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP Advance (5x5)

TPH2010FNH,L1Q FAQ

1.How can I place an order for TPH2010FNH,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPH2010FNH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPH2010FNH,L1Q reliable?

The price and inventory of TPH2010FNH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH2010FNH,L1Q is usually 5 days.

3.What payment methods are accepted for TPH2010FNH,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH2010FNH,L1Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPH2010FNH,L1Q?

TPH2010FNH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPH2010FNH,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPH2010FNH,L1Q?

For technical support, including TPH2010FNH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH2010FNH,L1Q requirements.

6.How does Aetrix verify that TPH2010FNH,L1Q is sourced from the original manufacturer or authorized distributors?

All TPH2010FNH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH2010FNH,L1Q meets industry standards.

7.What is the process for return or replacement of TPH2010FNH,L1Q?

All TPH2010FNH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH2010FNH,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPH2010FNH,L1Q part is unused and in its original packaging.

Return procedure for TPH2010FNH,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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