Toshiba Semiconductor and Storage TPH2R104PL,LQ

Overview

TPH2R104PL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H family, designed for high-current, low-voltage switching in synchronous rectification stages. It delivers R_DS(ON) = 1.6 mΩ (typ.) at V_GS = 10 V, supports 100 A DC drain current, and features Q_SW = 21 nC and Q_oss = 46 nC for high-efficiency DC-DC converters operating up to 40 V input.

For engineers reviewing the TPH2R104PL datasheet, TPH2R104PL pinout, TPH2R104PL application, or TPH2R104PL equivalent, key selection criteria include its SOP Advance package thermal performance (R_th(ch-c) = 1.29 °C/W), gate threshold range (1.4–2.4 V), and verified suitability for 50 A continuous switching in buck converter high-side/low-side configurations.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_g ratio (19/78 nC) enables fast, controllable turn-off with reduced Miller-induced shoot-through risk in hard-switched topologies.

The device integrates a robust body diode with t_rr = 44 ns and Q_rr = 42 nC, supporting synchronous rectification without external Schottky diodes in 12 V–48 V intermediate bus converters where reverse recovery loss must be minimized.

Key Specifications

Pinout & Package

TPH2R104PL uses the SOP Advance surface-mount package (TOSHIBA designation: 2-5Q1S), an 8-pin thermally enhanced variant of SOP with exposed drain paddle for improved heat transfer. The package measures 5.0 × 6.0 × 1.0 mm and weighs 0.069 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6342TRPBF and DMTH4007LPSQ-13, the TPH2R104PL offers the lowest combined R_DS(ON)/Q_SW figure-of-merit (33.6 mΩ·nC) in its class, delivering superior efficiency in high-frequency, high-current POL converters where thermal resistance and switching loss dominate system loss budget.

Availability

TPH2R104PL is available at Aetrix Electronics and suitable for server VRM power stages, industrial 48 V DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TPH2R104PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in MOSFET process innovation.

The TPH2R104PL belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power supplies where low R_DS(ON) and fast switching are critical.

FAQ

What is the maximum continuous drain current rating for the TPH2R104PL?

The TPH2R104PL is rated for 100 A DC drain current under case temperature (T_c) = 25°C conditions. This rating is limited by package thermal capability-not silicon-so actual usable current depends on PCB copper area, heatsinking, and ambient temperature. At T_c = 100°C, the derated continuous current drops to approximately 55 A per Toshiba's Safe Operating Area curve.

Does the TPH2R104PL require a gate driver IC, or can it be driven directly by a microcontroller?

The TPH2R104PL can be driven directly by a 3.3 V or 5 V microcontroller GPIO only if peak current demand is low and switching frequency is below 100 kHz. Its gate threshold (1.4–2.4 V) ensures turn-on, but full enhancement requires ≥4.5 V for low R_DS(ON). For 50 A switching at >200 kHz, a dedicated gate driver (e.g., TC4427) is required to deliver the 78 nC total gate charge within nanoseconds and avoid shoot-through.

What is the thermal resistance from channel to case (R_th(ch-c)) for the TPH2R104PL, and how should it be applied in thermal design?

The TPH2R104PL has R_th(ch-c) = 1.29 °C/W when mounted on a low-thermal-resistance heatsink or thick copper plane. This value applies only when the exposed drain paddle is fully soldered to a thermally optimized PCB pad. To calculate junction temperature: T_j = T_c + (P_diss × 1.29). For example, at 50 W dissipation and T_c = 80°C, T_j = 144.5°C-within the 175°C absolute max limit.

Is the TPH2R104PL suitable for synchronous rectification in a 48 V to 12 V LLC converter?

Yes-the TPH2R104PL is well-suited for secondary-side synchronous rectification in 48 V-to-12 V LLC converters. Its 40 V V_DSS, low Q_oss (46 nC), and fast body diode (t_rr = 44 ns) minimize turn-off loss and reverse recovery stress during ZVS transitions. Designers must ensure gate timing avoids cross-conduction and that layout minimizes source inductance to preserve switching speed.

How does the TPH2R104PL's Q_gd/Q_g ratio impact its performance in hard-switched topologies?

The TPH2R104PL's Q_gd/Q_g ratio of 24% (19 nC / 78 nC) significantly improves controllability in hard-switched topologies like buck or flyback. A low ratio shortens the Miller plateau duration, reducing sensitivity to dV/dt-induced false turn-on and enabling tighter dead-time control-critical for preventing shoot-through in high-side/low-side half-bridge configurations using the TPH2R104PL.