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Toshiba Semiconductor and Storage TPH2R306NH,L1Q
- Part No.:
- TPH2R306NH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPH2R306NH,L1Q.pdf
- Description:
- MOSFET N-CH 60V 60A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:48
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Product details
Overview
TPH2R306NH from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-efficiency DC-DC converters and switching voltage regulators. It delivers RDS(ON) = 1.9 mΩ (typ., VGS = 10 V), QSW = 26 nC (typ.), and supports continuous drain current up to 130 A (Tc = 25 °C), enabling low conduction loss and fast switching in high-power synchronous buck stages.
For engineers reviewing the TPH2R306NH datasheet, TPH2R306NH pinout, TPH2R306NH application, or TPH2R306NH equivalent, key selection criteria include its 60 V VDSS, SOP Advance package thermal performance (Rth(ch-c) = 1.60 °C/W), and verified avalanche capability (EAS = 453 mJ) - critical for robust motor driver and industrial SMPS designs.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to simultaneously minimize RDS(ON) and gate charge, supporting high-frequency operation up to 1 MHz in synchronous rectification. Its enhancement-mode threshold (Vth = 2.0–4.0 V) ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers.
The device integrates a low-forward-voltage body diode (VDSF = −1.2 V typ. at IDR = 60 A) and exhibits low Crss (55 pF typ.) to reduce Miller-induced shoot-through risk. Thermal design is enabled by its channel-to-case resistance of 1.60 °C/W and maximum channel temperature rating of 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage, suitable for 48 V bus systems and automotive 36 V nominal applications. |
| RDS(ON) | 1.9 mΩ (typ., VGS = 10 V) - Enables <1.2 W conduction loss at 25 A, reducing heatsink requirements in high-current power stages. |
| QSW | 26 nC (typ.) - Low total switching charge minimizes gate drive power and enables efficient operation above 500 kHz. |
| ID (DC) | 130 A (Tc = 25 °C) - Supports high-output-current DC-DC converters without parallel devices in compact layouts. |
| EAS | 453 mJ - Guaranteed single-pulse avalanche energy allows safe operation under inductive switching stress without snubbers. |
| Rth(ch-c) | 1.60 °C/W - Enables direct thermal coupling to heatsinks or PCB copper planes for high-power density thermal management. |
Pinout & Package
TPH2R306NH is housed in the SOP Advance (TOSHIBA package code 2-5Q1S) surface-mount package - an 8-pin, thermally enhanced variant of SOP with exposed drain paddle for low thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel cells; electrically tied to substrate ground plane for low-inductance return path. |
| 4 | Gate | Control terminal requiring ≤±20 V gate drive; low input capacitance (Ciss = 4700 pF typ.) reduces driver loading. |
| 5, 6, 7, 8 | Drain | Exposed drain paddle connected to pins 5–8; serves as primary thermal and current path to PCB copper or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench process | Optimizes RDS(ON) × Qg figure-of-merit to 36.5 mΩ·nC - enabling higher efficiency than prior-generation 60 V MOSFETs at 1 MHz. |
| Low Crss / Ciss ratio | Crss = 55 pF / Ciss = 4700 pF → 1.17% - suppresses Miller plateau duration and improves hard-switching robustness. |
| Enhancement-mode Vth | 2.0–4.0 V range ensures clean turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting circuitry. |
| Body diode reverse recovery | VDSF = −1.2 V (typ., IDR = 60 A) with soft recovery behavior - reduces EMI and cross-conduction loss in synchronous rectifiers. |
Applications
| Server VRM Power Stage | Industrial Motor Drive Inverter |
|---|---|
|
Use Scenario: High-current, high-frequency buck converter supplying core voltage to multi-core CPUs in data center servers. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 600–800 kHz with precise dead-time control. Use Value: 1.9 mΩ RDS(ON) cuts conduction loss by >35% vs. legacy 3.5 mΩ MOSFETs, directly improving VRM efficiency from 92% to 94.5% at 100 A. |
Use Scenario: Three-phase inverter stage driving 5–10 kW permanent magnet motors in CNC machines and robotic arms. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid topology, handling 60 A peak phase current. Use Value: 453 mJ avalanche rating eliminates need for external clamping diodes during motor stall or regenerative braking events. |
| Telecom 48 V Intermediate Bus Converter | EV Onboard Charger (OBC) PFC Stage |
|
Use Scenario: Isolated forward or LLC resonant converter stepping down 48 V telecom input to 12 V/24 V intermediate bus. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in secondary-side synchronous rectification scheme. Use Value: Low QSW (26 nC) and fast tr/tf (9.9 ns / 16 ns) enable zero-voltage switching (ZVS) over 95% load range, reducing switching losses by 22%. |
Use Scenario: Boost PFC switch in 3.3–6.6 kW bidirectional OBCs compliant with IEC 61851-1. IC Role / Device Role / Timing Role: Fast-switching, high-current boost switch operating at 65–100 kHz with active clamp control. Use Value: Rth(ch-c) = 1.60 °C/W allows direct mounting to aluminum cold plate, maintaining Tch < 125 °C at full 6.6 kW without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH130N06S3 | RDS(ON) = 2.2 mΩ (VGS = 10 V); TO-247 package; higher Qg = 110 nC | Requires larger PCB area and heatsink; better suited for lower-frequency (<200 kHz), higher-voltage margin designs | Select when board space permits TO-247 and thermal mass exceeds 100 cm² copper; avoid for high-frequency compact VRMs. |
| STL220N6F7 | RDS(ON) = 2.0 mΩ (VGS = 10 V); PowerFLAT 8x8 package; QSW = 32 nC | Similar footprint but higher switching loss; lacks guaranteed EAS rating | Acceptable for cost-sensitive telecom PSUs where avalanche stress is mitigated by system-level protection; not recommended for motor drives. |
Compared with IXTH130N06S3 and STL220N6F7, the TPH2R306NH offers the lowest RDS(ON) × QSW product in SOP Advance packaging - delivering superior power density and efficiency in space-constrained, high-frequency applications such as server VRMs and OBC PFC stages.
Availability
TPH2R306NH is available at Aetrix Electronics and suitable for DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across industrial, telecom, and EV infrastructure programs.
Supply support for TPH2R306NH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for power management, motor control, and interface applications, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The TPH2R306NH belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-current switching in next-generation server, telecom, and electric vehicle power systems.
FAQ
What is the maximum continuous drain current rating for the TPH2R306NH?
The TPH2R306NH supports 130 A continuous drain current at case temperature Tc = 25 °C per its Absolute Maximum Ratings table. At elevated case temperatures, derating applies - e.g., 60 A at Tc = 100 °C - based on its thermal resistance and channel temperature limit of 150 °C. This rating assumes proper PCB copper area and thermal vias per Toshiba's recommended layout.
Does the TPH2R306NH have a specified avalanche energy rating?
Yes, the TPH2R306NH specifies a single-pulse avalanche energy (EAS) of 453 mJ under test conditions of VDD = 48 V, Tch = 25 °C (initial), L = 0.097 mH, and IAR = 60 A. This rating is guaranteed and enables reliable operation in inductive switching applications like motor drives without external snubber networks.
What is the gate threshold voltage range for the TPH2R306NH?
The TPH2R306NH has a gate threshold voltage (Vth) range of 2.0 V to 4.0 V, measured at VDS = 10 V and ID = 1.0 mA. This enhancement-mode specification ensures compatibility with standard 3.3 V and 5 V logic-level gate drivers while providing noise immunity against false turn-on in noisy industrial environments.
Can the TPH2R306NH be used in synchronous rectification topologies?
Yes, the TPH2R306NH is well-suited for synchronous rectification due to its low RDS(ON) (1.9 mΩ), fast switching times (tr = 9.9 ns, tf = 16 ns), and low reverse transfer capacitance (Crss = 55 pF typ.). Its body diode forward voltage (VDSF = −1.2 V typ. at 60 A) also supports efficient freewheeling during dead time in LLC and forward converters.
What package type does the TPH2R306NH use, and what are its thermal characteristics?
The TPH2R306NH uses the SOP Advance package (TOSHIBA code 2-5Q1S), an 8-pin surface-mount package with an exposed drain paddle. Its channel-to-case thermal resistance is 1.60 °C/W, enabling efficient heat transfer to PCB copper or external heatsinks. The package weighs 0.087 g (typ.) and supports reflow soldering per J-STD-020.
TPH2R306NH,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6100 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta), 78W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP Advance (5x5)
TPH2R306NH,L1Q FAQ
1.How can I place an order for TPH2R306NH,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPH2R306NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPH2R306NH,L1Q reliable?
The price and inventory of TPH2R306NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH2R306NH,L1Q is usually 5 days.
3.What payment methods are accepted for TPH2R306NH,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH2R306NH,L1Q transactions.
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4.How is shipping managed for TPH2R306NH,L1Q?
TPH2R306NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPH2R306NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPH2R306NH,L1Q?
For technical support, including TPH2R306NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH2R306NH,L1Q requirements.
6.How does Aetrix verify that TPH2R306NH,L1Q is sourced from the original manufacturer or authorized distributors?
All TPH2R306NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH2R306NH,L1Q meets industry standards.
7.What is the process for return or replacement of TPH2R306NH,L1Q?
All TPH2R306NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH2R306NH,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPH2R306NH,L1Q part is unused and in its original packaging.
Return procedure for TPH2R306NH,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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