Toshiba Semiconductor and Storage TPH2R805PL,LQ

Overview

TPH2R805PL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current, low-R_DS(ON) switching element for DC-DC converters and motor drivers. It delivers R_DS(ON) = 2.1 mΩ (typ., V_GS = 10 V), Q_SW = 22 nC (typ.), and supports 100 A DC drain current at T_c = 25 °C in high-efficiency 45 V systems.

For engineers reviewing the TPH2R805PL datasheet, TPH2R805PL pinout, TPH2R805PL application, or TPH2R805PL equivalent, this device is selected for high-frequency synchronous rectification, compact power stages requiring <3 mΩ on-resistance, and thermally constrained industrial motor control designs where gate charge minimization directly impacts efficiency.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve ultra-low conduction loss while maintaining fast switching speed. Its optimized cell layout reduces both Q_gd (17 nC typ.) and Q_oss (55 nC typ.), enabling efficient operation in hard-switched topologies up to several hundred kHz.

The device features enhancement-mode operation with V_th = 1.4–2.4 V (V_DS = 10 V, I_D = 0.5 mA), ensuring reliable turn-on with standard 4.5 V logic-level gate drive. Its 45 V V_DSS rating targets 12 V/24 V/36 V input bus applications with margin against transient overvoltage.

Key Specifications

Pinout & Package

TPH2R805PL uses the SOP Advance surface-mount package (TOSHIBA designation: 2-5Q1S), featuring exposed drain pads for enhanced thermal dissipation and compact footprint (5.0 × 6.0 mm). The package weighs 0.069 g and is RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL40B215TRPBF and DMTH4007LPSQ-13, the TPH2R805PL offers the lowest Q_SW/R_DS(ON) ratio in its class, making it optimal for high-frequency, high-current industrial power stages where thermal headroom and gate drive simplicity are critical design constraints.

Availability

TPH2R805PL is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, motor drivers, and industrial power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for TPH2R805PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon power MOSFET process technology.

The TPH2R805PL belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET product line, engineered specifically for next-generation DC-DC conversion and motor control applications demanding ultra-low on-resistance and fast switching in compact surface-mount packages.

FAQ

What is the maximum continuous drain current rating for TPH2R805PL?

The TPH2R805PL is rated for 100 A DC drain current at case temperature T_c = 25 °C. This rating assumes proper PCB thermal design with adequate copper area and thermal vias. At higher case temperatures, current must be derated per the Safe Operating Area curve in the datasheet; for example, at T_c = 100 °C, the maximum DC current drops to approximately 55 A. Always verify thermal performance using R_th(ch-c) = 1.29 °C/W in your specific layout.

Does TPH2R805PL support 4.5 V gate drive for full enhancement?

Yes, the TPH2R805PL is fully characterized at V_GS = 4.5 V, with R_DS(ON) = 2.7 mΩ (typ.) and Q_g = 73 nC (typ.). Its V_th range of 1.4–2.4 V ensures reliable turn-on with standard 3.3 V or 4.5 V logic-level drivers. However, for minimum R_DS(ON) and optimal efficiency, 10 V gate drive is recommended - achieving 2.1 mΩ (typ.) and lower switching losses due to reduced Q_SW.

What is the thermal resistance from channel to case (R_th(ch-c)) for TPH2R805PL?

The TPH2R805PL has a guaranteed maximum channel-to-case thermal resistance of 1.29 °C/W. This value is measured under standardized test conditions (T_c = 25 °C) and reflects the device's ability to transfer heat from the silicon die to the PCB-mounted drain terminals. Achieving this value requires proper soldering to a thermally robust pad with ≥4 thermal vias (0.3 mm diameter) connecting to inner ground planes.

Can TPH2R805PL be used as a synchronous rectifier in a 45 V output power supply?

Yes, the TPH2R805PL is suitable as a synchronous rectifier in 45 V output power supplies. Its 45 V V_DSS rating matches the output voltage, and its low R_DS(ON) (2.1 mΩ) significantly reduces conduction loss compared to Schottky diodes. For safe operation, ensure the body diode's reverse recovery characteristics (t_rr = 46 ns typ., Q_rr = 46 nC typ.) are managed via appropriate gate timing to avoid cross-conduction in the controller IC driving the TPH2R805PL.

Is TPH2R805PL lead-free and RoHS compliant?

Yes, the TPH2R805PL is lead-free and complies with the EU RoHS Directive. Toshiba confirms RoHS compliance in the official datasheet (Rev. 1.0.B, 2026-05-13) and provides material declarations upon request. The SOP Advance package uses matte tin plating on terminals, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements for unlimited floor life at ≤30 °C/60 % RH.