Toshiba Semiconductor and Storage TPH2R903PL,L1Q

Overview

TPH2R903PL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H family, designed for high-frequency switching in synchronous rectification and low-side switching positions. It delivers R_DS(ON) = 2.1 mΩ (typ.) at V_GS = 10 V, Q_SW = 5.6 nC (typ.), and Q_oss = 17 nC (typ.), enabling high-efficiency DC-DC converters up to 1 MHz.

For engineers reviewing the TPH2R903PL datasheet, TPH2R903PL pinout, TPH2R903PL application, or TPH2R903PL equivalent, key selection criteria include its 30 V V_DSS, 70 A I_D (DC), SOP Advance package thermal performance (R_th(ch-c) = 1.83 °C/W), and gate threshold range of 1.1–2.1 V - all critical for compact, high-current power stages.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_g ratio (5.9/26 nC) supports fast, controllable turn-off with reduced Miller-induced shoot-through risk in half-bridge configurations.

The device features enhancement-mode operation with guaranteed ±20 V gate-source voltage rating (DC), 30 V drain-source breakdown, and robust avalanche capability (E_AS = 25 mJ). Thermal design is enabled by validated channel-to-case resistance and glass-epoxy board derating data per Figures 5.1 and 5.2.

Key Specifications

Pinout & Package

SOP Advance package (TOSHIBA designation: 2-5Q1S), 8-pin surface-mount, 0.070 g typical weight. Exposed drain paddle improves thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242PBF and DMTH3007LPSQ, the TPH2R903PL provides superior Q_SW/Q_oss balance and validated avalanche energy - making it optimal for high-frequency, high-reliability power stages where both efficiency and ruggedness are prioritized.

Availability

TPH2R903PL is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across automotive infotainment, industrial automation, and telecom infrastructure programs.

Supply support for TPH2R903PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and storage solutions with emphasis on energy efficiency and reliability.

The TPH2R903PL belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-frequency, high-current synchronous rectification and low-side switching in space-constrained power supplies.

FAQ

What is the maximum continuous drain current rating for TPH2R903PL at 25 °C case temperature?

The TPH2R903PL has a maximum continuous drain current (I_D) rating of 70 A when the case temperature (T_c) is maintained at 25 °C. This rating assumes proper thermal management using the exposed drain pad and sufficient PCB copper area. At higher case temperatures, the current must be derated per the Safe Operating Area curve in Figure 8.16 of the official datasheet. The TPH2R903PL datasheet specifies this limit under Note 2: "Ensure that the channel temperature does not exceed 175 °C."

Does TPH2R903PL support 4.5 V gate drive for full enhancement?

Yes, the TPH2R903PL is fully enhanced at V_GS = 4.5 V, delivering R_DS(ON) = 3.0 mΩ (typ.) at I_D = 30 A. Its gate threshold voltage (V_th) range of 1.1–2.1 V ensures reliable turn-on with standard 3.3 V and 5 V logic-level drivers. The TPH2R903PL gate charge characteristics confirm Q_g = 26 nC (typ.) at V_GS = 10 V and Q_gs1 = 12 nC (typ.) at V_GS = 4.5 V, supporting efficient low-voltage drive without external level shifters.

What is the thermal resistance from channel to ambient for TPH2R903PL on a standard PCB?

The TPH2R903PL has two specified channel-to-ambient thermal resistances: R_th(ch-a) = 50 °C/W when mounted on glass-epoxy board (a) per Figure 5.1, and 156 °C/W on board (b) per Figure 5.2. These values assume defined copper patterns and are not absolute maximums - actual performance depends on PCB layout, copper thickness, and airflow. For thermal design, the channel-to-case resistance (R_th(ch-c) = 1.83 °C/W) is more repeatable and should be used with heatsink or thermal pad modeling. The TPH2R903PL datasheet explicitly ties these ratings to test conditions in Notes 4 and 5.

Is TPH2R903PL suitable for avalanche-prone circuits like motor freewheeling?

Yes, the TPH2R903PL is rated for single-pulse avalanche energy (E_AS) of 25 mJ under specified test conditions (V_DD = 24 V, I_AS = 70 A, t = 100 µs). This makes it suitable for controlled avalanche operation in motor driver freewheeling paths and inductive load switching. However, repetitive avalanche is not guaranteed, and safe operation requires adherence to the SOA limits and channel temperature constraint of ≤175 °C. The TPH2R903PL datasheet confirms this rating in Section 4, Absolute Maximum Ratings, Note 4.

What package type and pin configuration does TPH2R903PL use?

The TPH2R903PL uses the SOP Advance package (TOSHIBA designation: 2-5Q1S), an 8-pin surface-mount variant with an exposed drain paddle. Pin assignments are: Pins 1–3 = Source, Pin 4 = Gate, Pins 5–8 = Drain (internally connected to the exposed pad). This configuration enables low-inductance source routing and high-current drain conduction through the thermal pad. The TPH2R903PL mechanical drawing and internal circuit diagram in Section 3 of the datasheet validate this pinout and package mapping.