Toshiba Semiconductor and Storage TPH4R003NL,L1Q

Overview

TPH4R003NL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-efficiency synchronous rectifier or main switch in DC-DC converters. It delivers R_DS(ON) = 4.9 mΩ (typ.) at V_GS = 4.5 V, Q_SW = 3.9 nC (typ.), and supports continuous drain current up to 68 A (T_c = 25 °C), enabling compact, high-frequency switching power stages.

For engineers reviewing the TPH4R003NL datasheet, TPH4R003NL pinout, TPH4R003NL application, or TPH4R003NL equivalent, key selection criteria include low gate charge for fast turn-on/turn-off, 30 V V_DSS rating suitable for 12–24 V input systems, SOP Advance package thermal performance, and verified enhancement-mode threshold voltage (1.3–2.3 V) for reliable logic-level drive compatibility.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize conduction and switching losses simultaneously. Its low R_DS(ON) and optimized gate charge profile support operation in synchronous buck converters above 500 kHz, with integrated body diode recovery characteristics validated for hard-switched topologies.

The device features a thermally enhanced SOP Advance (2-5Q1S) package with four parallel drain terminals and triple-source configuration, enabling efficient heat transfer to PCB copper while maintaining standard surface-mount assembly compatibility.

Key Specifications

Pinout & Package

TPH4R003NL uses the SOP Advance (2-5Q1S) package - a thermally optimized 8-pin surface-mount outline with exposed drain paddle, 0.070 g mass, and JEDEC-standard footprint for automated reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6342TRPBF and DMN3029LSD-13, the TPH4R003NL offers the best balance of low Q_SW, thermally robust SOP Advance packaging, and verified 30 V system compatibility - making it optimal for high-density, high-frequency DC-DC converters where gate drive efficiency and thermal headroom are critical.

Availability

TPH4R003NL is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and point-of-load (POL) power modules requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for TPH4R003NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on energy efficiency, reliability, and miniaturization for industrial and consumer systems.

The TPH4R003NL belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-frequency, high-current DC-DC conversion in space-constrained applications such as server VRMs, telecom power supplies, and automotive ADAS ECUs.

FAQ

What is the maximum continuous drain current rating for TPH4R003NL under real-world PCB conditions?

The TPH4R003NL is rated for 68 A DC at T_c = 25 °C, but practical continuous current depends on PCB thermal design. With ≥2 oz copper on both sides and 10 cm² thermal pad area, sustained current reaches 42 A at 60 °C ambient. Derating follows R_th(ch-a) = 44.6 °C/W (glass-epoxy board), and the channel temperature must remain below 150 °C per Toshiba's absolute maximum ratings. The TPH4R003NL datasheet specifies this limit explicitly in Section 4.

Does TPH4R003NL support 3.3 V logic-level gate drive without external level shifting?

Yes - the TPH4R003NL has a guaranteed V_th range of 1.3–2.3 V at V_DS = 10 V and I_D = 0.2 mA, ensuring full enhancement with 3.3 V gate drive. At V_GS = 3.3 V, R_DS(ON) rises to ~7.2 mΩ (typ.), still enabling efficient operation in medium-current applications. This eliminates need for level shifters in microcontroller-driven SMPS, a key design benefit confirmed in Toshiba's Electrical Characteristics table (Section 6.1).

How does the SOP Advance package of TPH4R003NL improve thermal performance versus standard SO-8?

The SOP Advance (2-5Q1S) package used by TPH4R003NL integrates an exposed drain paddle connected to pins 5–8, providing a low-thermal-resistance path from die to PCB. Its R_th(ch-c) is 3.47 °C/W - over 4× better than standard SO-8 (~15 °C/W). Combined with triple-source terminals, this reduces junction-to-ambient resistance to 44.6 °C/W (board type a), enabling higher power density without heatsinks. This thermal architecture is documented in Toshiba's Thermal Characteristics section (Section 5).

Is TPH4R003NL suitable for avalanche-rated applications such as inductive load switching?

The TPH4R003NL is characterized for single-pulse avalanche energy (E_AS) of 62 mJ at T_ch = 25 °C, with I_AR = 40 A. While not officially rated for repetitive avalanche, its rugged U-MOSⅧ-H structure supports limited unclamped inductive switching events - e.g., in solenoid drivers or relay snubbers - provided peak channel temperature stays below 150 °C and pulse repetition is low. Toshiba's Absolute Maximum Ratings table (Section 4) defines these limits precisely.

What is the body diode forward voltage (V_DSF) of TPH4R003NL and how does it affect synchronous rectification?

The TPH4R003NL body diode exhibits V_DSF = −1.2 V (max) at I_DR = 40 A and V_GS = 0 V. In synchronous rectification, this relatively low forward drop minimizes reverse-recovery losses during dead-time transitions. When paired with proper gate timing, the TPH4R003NL achieves >95 % efficiency at 20 A in 12 V → 5 V buck converters - a performance benchmark validated in Toshiba's application notes for U-MOSⅧ-H devices.