Toshiba Semiconductor and Storage TPH4R008NH,L1Q

Overview

TPH4R008NH from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 3.3 mΩ (typ.) at V_GS = 10 V, Q_SW = 18 nC (typ.), and supports 80 V V_DSS, enabling low conduction loss and fast switching in compact 48 V industrial power stages.

For engineers reviewing the TPH4R008NH datasheet, TPH4R008NH pinout, TPH4R008NH application, or TPH4R008NH equivalent, this device is selected for high-current, low-R_DS(ON) synchronous rectification where thermal performance on FR-4 PCBs and gate drive efficiency are critical design constraints.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve optimized cell density and reduced specific on-resistance. Its 80 V breakdown voltage and 100 A DC current rating (T_c = 25 °C) target mid-voltage power conversion systems requiring robust avalanche capability (E_AS = 340 mJ).

The device features enhancement-mode operation with V_th = 2.0–4.0 V and low gate leakage (±0.1 µA), supporting standard 10 V gate drive while maintaining tight threshold control across temperature. Its Crss = 32 pF (typ.) and Ciss = 4100 pF (typ.) support stable high-frequency PWM operation up to several hundred kHz.

Key Specifications

Pinout & Package

TPH4R008NH is housed in the SOP Advance (TOSHIBA package code 2-5Q1S) - an 8-pin surface-mount package with exposed drain pad for enhanced thermal performance. The package measures 5.0 × 6.0 mm with 0.65 mm pitch and 0.087 g typical weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PBF and SiR626DP, the TPH4R008NH offers superior thermal resistance (1.60 °C/W vs. ~2.5 °C/W for TO-220 and ~2.0 °C/W for PowerPAK), enabling higher sustained power in space-constrained layouts without compromising reliability at 150 °C channel temperature.

Availability

TPH4R008NH is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and industrial power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for TPH4R008NH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors and ICs for power management, motor control, and interface applications, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TPH4R008NH belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-current switching in compact 48 V industrial and telecom power systems where thermal density and gate drive efficiency are primary constraints.

FAQ

What is the maximum continuous drain current rating for TPH4R008NH?

The TPH4R008NH has a DC drain current rating of 100 A when case temperature (T_c) is maintained at 25 °C. At higher temperatures or under PCB-only cooling (no heatsink), derating applies per the R_th(ch-a) = 44.6 °C/W curve. For sustained 60 A operation, thermal design must ensure T_ch ≤ 150 °C using appropriate copper area and airflow. The TPH4R008NH datasheet specifies 60 A as the package-limited DC current under standard FR-4 mounting conditions.

Does TPH4R008NH support 5 V gate drive?

No - the TPH4R008NH is not specified for full enhancement at 5 V gate drive. Its gate threshold voltage (V_th) ranges from 2.0 to 4.0 V, but R_DS(ON) = 3.3 mΩ is guaranteed only at V_GS = 10 V. At V_GS = 5 V, R_DS(ON) rises significantly (>15 mΩ), increasing conduction loss. The TPH4R008NH requires ≥8 V gate drive for practical use in high-current applications, and 10 V is recommended for optimal performance.

What is the avalanche rating of TPH4R008NH and how is it tested?

The TPH4R008NH is rated for single-pulse avalanche energy (E_AS) of 340 mJ under test conditions of V_DD = 60 V, T_ch = 25 °C (initial), L = 0.08 mH, R_G = 1.0 Ω, and I_AR = 60 A. This rating reflects ruggedness against inductive switching transients in hard-switched topologies. The TPH4R008NH does not specify repetitive avalanche capability, and repeated avalanche events are not recommended in production designs.

Is TPH4R008NH RoHS compliant and halogen-free?

Yes - the TPH4R008NH meets EU RoHS Directive 2011/65/EU requirements and is halogen-free per JESD209-4. Lead-free plating is applied to all external terminals, and the molded compound contains no brominated flame retardants. Compliance documentation, including material declarations and test reports, is available upon request from Toshiba or authorized distributors. The TPH4R008NH product marking and packaging reflect full environmental compliance status.

How does the SOP Advance package of TPH4R008NH compare thermally to TO-252?

The SOP Advance (2-5Q1S) package used by the TPH4R008NH achieves R_th(ch-c) = 1.60 °C/W - comparable to TO-252 with thermal pad but in a smaller 5.0 × 6.0 mm footprint. Unlike TO-252, SOP Advance integrates four drain pins plus an exposed thermal pad, enabling dual-side heat extraction. On standard 2-layer FR-4, its R_th(ch-a) = 44.6 °C/W is ~15% better than typical TO-252, making the TPH4R008NH especially effective in dense, low-profile power modules where board real estate is constrained.