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Toshiba Semiconductor and Storage TPH4R50ANH1,LQ
- Part No.:
- TPH4R50ANH1,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
TPH4R50ANH1,LQ.pdf
- Description:
- MOSFET 100V 4.5MOHM SOP-ADV(N)
- Quantity:
- Payment:
- Shipping:
Inventory:6,077
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Product details
Overview
TPH4R50ANH1,LQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-frequency switching in primary-side power stages. It delivers 3.7 mΩ RDS(ON) at VGS = 10 V, 92 A DC drain current, and low gate charge (QSW = 22 nC typ.) for efficient operation in 100 V DC-DC converters.
For engineers reviewing the TPH4R50ANH1,LQ datasheet, TPH4R50ANH1,LQ pinout, TPH4R50ANH1,LQ application, or TPH4R50ANH1,LQ equivalent, this device is selected for high-efficiency synchronous rectification, motor phase switching, and industrial SMPS where thermal performance, avalanche ruggedness (EAS = 102 mJ), and low conduction loss are critical.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to minimize RDS(ON) × Qg figure-of-merit while maintaining robust 100 V VDSS rating and 150 °C channel temperature capability. Its optimized cell layout reduces Crss (31 pF typ.) and Coss (700 pF typ.), enabling fast switching with low EMI generation in hard-switched topologies.
The device features enhancement-mode operation (Vth = 2.0–4.0 V), low IDSS (≤10 µA at 100 V), and integrated body diode with trr = 63 ns and Qrr = 104 nC - supporting ZVS-assisted designs and reducing reverse recovery losses in buck and half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports input rails up to 48 V nominal systems with 2× safety margin for transient clamping. |
| RDS(ON) (VGS = 10 V) | 3.7 mΩ (typ.) - enables ≤4.3 W conduction loss at 92 A DC, reducing heatsink requirements in high-current regulators. |
| QSW | 22 nC (typ.) - minimizes gate drive power and allows use with low-power drivers in 500 kHz+ switching applications. |
| EAS | 102 mJ - provides single-pulse avalanche energy tolerance for inductive load switching without external snubbers. |
| Rth(ch-c) | 0.71 °C/W - enables direct mounting to copper planes or heatsinks for thermal management in compact 2-layer PCBs. |
| ID (DC) | 92 A (Tc = 25 °C) - supports high-current motor phases and server VRMs without parallel devices. |
| Ciss | 4000 pF (typ.) - balances switching speed and EMI control in isolated flyback and LLC resonant converters. |
Pinout & Package
TPH4R50ANH1,LQ is housed in the SOP Advance(N) package (TOSHIBA designation: 2-5W1A), an 8-pin surface-mount outline with exposed drain paddle for enhanced thermal dissipation. The package measures 5.0 mm × 6.0 mm × 1.0 mm and weighs 0.111 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal parallel cells; connects to ground plane or low-side return path. |
| 4 | Gate | Control terminal requiring <2.0–4.0 V threshold; sensitive to ESD - must be protected per JEDEC JS-001. |
| 5, 6, 7, 8 | Drain | High-current output node tied to exposed copper paddle; electrically and thermally connected to PCB drain pad. |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench structure | Reduces RDS(ON) × Qg by 25% vs. prior U-MOS generations, improving efficiency in 300–1000 kHz SMPS. |
| Low Qoss (79 nC) | Minimizes turn-off loss during high-voltage transitions, critical for high-side switch operation in buck converters. |
| Enhancement-mode Vth | 2.0–4.0 V range ensures reliable turn-on with standard 3.3 V/5 V logic-level drivers without level-shifting. |
| Robust avalanche rating | 102 mJ single-pulse energy withstand enables operation in inductive switching without derating for surge conditions. |
| Low leakage (IDSS ≤ 10 µA) | Ensures minimal standby power loss in always-on power supplies and battery-backed systems. |
Applications
| Server Voltage Regulator Module (VRM) | Industrial Motor Phase Driver |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET operating at 500–1000 kHz with precise gate timing control. Use Value: 3.7 mΩ RDS(ON) and 22 nC QSW reduce total power loss by ≥12% vs. legacy 5 mΩ devices, lowering VRM thermal density. |
Use Scenario: Three-phase inverter driving 1–3 kW BLDC motors in CNC spindles and automated conveyors. IC Role / Device Role / Timing Role: Low-side switching element in 60–100 kHz PWM-driven H-bridge leg with fast dead-time control. Use Value: 92 A DC rating and 0.71 °C/W Rth(ch-c) allow direct copper-pad mounting, eliminating discrete heatsinks in IP54-rated enclosures. |
| Telecom DC-DC Brick Converter | Automotive On-Board Charger (OBC) PFC Stage |
Use Scenario: 48 V input, 12 V output isolated forward converter in telecom shelf power supplies. IC Role / Device Role / Timing Role: Primary-side active clamp switch handling repetitive 100 V transients during reset cycles. Use Value: 100 V VDSS and 102 mJ EAS eliminate need for external RCD clamp networks, simplifying BOM and layout. |
Use Scenario: Boost PFC stage in bi-directional OBC converting AC grid to 400 V DC bus for EV battery charging. IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65–135 kHz with soft-switching assist. Use Value: Low Qoss (79 nC) and Crss (31 pF) reduce turn-off loss and improve ZVS window, increasing PFC efficiency by 0.4–0.6% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH92N10L2 | Higher RDS(ON) (4.2 mΩ), larger TO-247 package, higher Qg (68 nC) | Requires larger PCB area and higher gate drive power; better suited for lower-frequency (<100 kHz), high-thermal-mass designs. | Select when board space permits TO-247 and thermal mass supports slower switching with higher conduction margin. |
| STL220N10F7 | Same 100 V rating, lower RDS(ON) (3.0 mΩ), but higher QSW (30 nC) and no published EAS rating | Lacks documented avalanche ruggedness; not recommended for inductive switching without external protection. | Prefer only in non-inductive, low-dV/dt applications like hot-swap FETs where conduction loss dominates. |
Compared with IXTH92N10L2 and STL220N10F7, TPH4R50ANH1,LQ offers the best balance of low RDS(ON), low QSW, and verified avalanche capability in a compact SOP Advance(N) package - making it optimal for space-constrained, high-frequency industrial and telecom power stages.
Availability
TPH4R50ANH1,LQ is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and automotive on-board chargers requiring stable component supply and long-term production continuity.
Supply support for TPH4R50ANH1,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor components for power management, motor control, and industrial automation, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The TPH4R50ANH1,LQ belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-frequency switching in 48–100 V industrial and communications power systems.
FAQ
What is the maximum continuous drain current rating for TPH4R50ANH1,LQ?
The TPH4R50ANH1,LQ supports 92 A DC drain current at case temperature (Tc) = 25 °C. At elevated temperatures, current must be derated per the Safe Operating Area curve in Figure 8.16. For sustained 70 °C case operation, the practical limit is approximately 65 A to maintain channel temperature ≤150 °C.
Does TPH4R50ANH1,LQ require a gate resistor for stability?
Yes - a 4.7 Ω gate resistor (RGG) is specified in the switching time test circuit (Figure 6.2.1) to control dV/dt and prevent oscillation. Using values below 3.3 Ω risks ringing and shoot-through in high-speed half-bridge configurations; above 10 Ω increases switching loss unnecessarily.
Is TPH4R50ANH1,LQ suitable for synchronous rectification in LLC resonant converters?
Yes - the TPH4R50ANH1,LQ is qualified for synchronous rectification due to its low Qoss (79 nC), fast body diode (trr = 63 ns), and tight Vth distribution (2.0–4.0 V). Its low Crss (31 pF) also improves ZVS behavior in high-frequency LLC topologies operating above 200 kHz.
What is the thermal resistance from channel to case (Rth(ch-c)) for TPH4R50ANH1,LQ?
The TPH4R50ANH1,LQ has a maximum channel-to-case thermal resistance of 0.71 °C/W, measured under standard test conditions (Tc = 25 °C). This value assumes proper soldering to a 100 mm² copper pad with ≥2 oz thickness and thermal vias - actual performance depends on PCB layout and heatsinking.
Can TPH4R50ANH1,LQ replace older U-MOS VI or VII devices in existing designs?
Yes - the TPH4R50ANH1,LQ is pin-compatible with earlier TPH4R50ANH variants in SOP Advance(N) packaging and offers improved RDS(ON) and Qg. No PCB changes are required, but gate drive strength should be verified due to lower Qg; existing 5 V drivers remain fully compatible thanks to its 2.0–4.0 V Vth range.
TPH4R50ANH1,LQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5200 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP Advance (5x5.75)
TPH4R50ANH1,LQ FAQ
1.How can I place an order for TPH4R50ANH1,LQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TPH4R50ANH1,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPH4R50ANH1,LQ reliable?
The price and inventory of TPH4R50ANH1,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH4R50ANH1,LQ is usually 5 days.
3.What payment methods are accepted for TPH4R50ANH1,LQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH4R50ANH1,LQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPH4R50ANH1,LQ?
TPH4R50ANH1,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPH4R50ANH1,LQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPH4R50ANH1,LQ?
For technical support, including TPH4R50ANH1,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH4R50ANH1,LQ requirements.
6.How does Aetrix verify that TPH4R50ANH1,LQ is sourced from the original manufacturer or authorized distributors?
All TPH4R50ANH1,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH4R50ANH1,LQ meets industry standards.
7.What is the process for return or replacement of TPH4R50ANH1,LQ?
All TPH4R50ANH1,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TPH4R50ANH1,LQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPH4R50ANH1,LQ part is unused and in its original packaging.
Return procedure for TPH4R50ANH1,LQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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