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Toshiba Semiconductor and Storage TPH4R606NH,L1Q
- Part No.:
- TPH4R606NH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPH4R606NH,L1Q.pdf
- Description:
- MOSFET N-CH 60V 32A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,625
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Product details
Overview
TPH4R606NH,L1Q from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers RDS(ON) = 3.8 mΩ (typ.) at VGS = 10 V, QSW = 19 nC (typ.), and supports 85 A DC drain current with 60 V VDSS, enabling compact, high-current synchronous rectification.
For engineers reviewing the TPH4R606NH,L1Q datasheet, TPH4R606NH,L1Q pinout, TPH4R606NH,L1Q application, or TPH4R606NH,L1Q equivalent, this device is selected for high-density power stages where low conduction loss, fast switching, and thermal performance on standard PCBs are critical design requirements.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve ultra-low RDS(ON) while maintaining robust avalanche capability (EAS = 133 mJ) and tight Vth distribution (2.0–4.0 V). Its gate charge profile-Qg = 49 nC, Qgd = 15 nC-enables efficient hard-switching up to several hundred kHz in buck and half-bridge topologies.
The device uses an SOP Advance (2-5Q1S) package with exposed drain pads on pins 5–8 and triple-source configuration (pins 1–3), optimizing thermal resistance (Rth(ch-c) = 1.98 °C/W) and current sharing. It operates in enhancement mode and is rated for Tch ≤ 150 °C with guaranteed safe operating area up to 96 A pulsed drain current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 48 V bus applications with margin |
| RDS(ON) (VGS = 10 V) | 3.8 mΩ (typ.) - Enables <1 W conduction loss at 16 A continuous current |
| QSW | 19 nC (typ.) - Reduces switching energy loss and gate drive power requirement |
| ID (DC) | 85 A - Supports high-current output stages without paralleling devices |
| Ciss | 3050 pF (typ.) - Matches typical gate driver output capability for <50 ns rise time |
| EAS | 133 mJ - Withstands single-pulse inductive energy in motor or converter fault conditions |
| Tch max | 150 °C - Defines maximum junction temperature for reliability-aware thermal design |
Pinout & Package
SOP Advance (2-5Q1S) package: 8-pin surface-mount, 5.0 × 6.0 mm footprint, 0.069 g mass, with exposed drain thermal pad on pins 5–8 and integrated source terminals on pins 1–3 for low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node; low-inductance parallel connection reduces switching ringing |
| 4 | Gate | Control terminal; requires <1.5 Ω series gate resistor to damp oscillation per test circuit |
| 5, 6, 7, 8 | Drain | High-current power path and primary thermal interface to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench process | Delivers 3.8 mΩ RDS(ON) in SOP Advance-25% lower than prior U-MOSⅦ-H equivalents at same voltage rating |
| Triple-source pinout | Reduces source inductance by ~40% vs. single-source packages, improving dV/dt immunity and EMI |
| Low Qgd/Qg ratio | 15/49 ≈ 0.31 - Enhances Miller immunity and enables stable operation with moderate gate drive strength |
| Guaranteed avalanche rating | 133 mJ single-pulse - Allows use in non-clamped inductive switching without external snubbers |
| Enhancement-mode threshold | Vth = 2.0–4.0 V - Ensures reliable turn-off at 0 V gate bias and compatibility with 3.3 V/5 V logic-level drivers |
Applications
| Server VRM Power Stage | Industrial BLDC Motor Inverter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in high-side/low-side pair, switching at 300–600 kHz. Use Value: 3.8 mΩ RDS(ON) minimizes I²R loss in low-voltage, high-current path; SOP Advance footprint enables dense phase layout. |
Use Scenario: 24–48 V three-phase inverter driving 500 W–2 kW brushless DC motors in CNC or conveyor systems. IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter module, handling 32 A pulsed phase current. Use Value: 133 mJ avalanche energy withstands back-EMF transients during commutation; 85 A DC rating avoids derating at 75 °C ambient. |
| Telecom DC-DC Brick | Automotive ADAS Camera Power Supply |
Use Scenario: 48 V input to 12 V intermediate bus converter in telecom shelf power system. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in phase-shifted full-bridge topology. Use Value: 19 nC QSW reduces gate drive losses at 100–200 kHz; 60 V VDSS accommodates 48 V bus + 20% transient margin. |
Use Scenario: Compact 12 V to 3.3 V point-of-load regulator powering image sensor and ISP in automotive camera module. IC Role / Device Role / Timing Role: High-efficiency buck switch operating at 1.5 MHz with strict EMI limits. Use Value: Low Ciss (3050 pF) and fast tr (10 ns) support clean 1.5 MHz switching; SOP Advance enables 6 mm² board area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP40N10P | RDS(ON) = 10 mΩ @ 10 V; TO-220 package; higher thermal resistance (Rth(ch-a) = 40 °C/W) | Requires heatsink for >15 A; unsuitable for ultra-dense layouts | Choose when mechanical mounting or legacy TO-220 compatibility is required over board space savings |
| IRF7470PBF | RDS(ON) = 4.5 mΩ @ 10 V; SO-8 package; no exposed drain pad; Rth(ch-c) = 3.5 °C/W | Limited to ~40 A DC due to thermal bottleneck; lower avalanche rating (EAS = 42 mJ) | Acceptable for lower-power DC-DC where cost is prioritized over peak efficiency and ruggedness |
Compared with IXTP40N10P and IRF7470PBF, the TPH4R606NH,L1Q provides superior power density and thermal performance in surface-mount applications requiring >50 A current handling and high-reliability avalanche operation-without requiring additional thermal infrastructure.
Availability
TPH4R606NH,L1Q is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and automotive ADAS power supplies requiring stable component supply across long production lifecycles.
Supply support for TPH4R606NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions, with leadership in trench-MOSFET technology and automotive-grade reliability.
The TPH4R606NH,L1Q belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-frequency, high-current switching in space-constrained power conversion systems.
FAQ
What is the maximum continuous drain current rating for the TPH4R606NH,L1Q?
The TPH4R606NH,L1Q is rated for 85 A DC drain current under specified thermal conditions (Tc = 25 °C). This rating assumes proper PCB copper area for heat dissipation via the exposed drain pads (pins 5–8). At elevated case temperatures or with limited copper, derating applies per the Rth(ch-c) = 1.98 °C/W specification. The TPH4R606NH,L1Q must not exceed 150 °C channel temperature in operation.
Does the TPH4R606NH,L1Q support logic-level gate drive?
The TPH4R606NH,L1Q has a gate threshold voltage range of 2.0–4.0 V, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, its RDS(ON) is specified at VGS = 10 V (3.8 mΩ typ.), so full performance requires ≥10 V drive. For 3.3 V drive, RDS(ON) rises significantly-consult the VGS vs. RDS(ON) curve in Figure 8.5 of the TPH4R606NH,L1Q datasheet.
What is the avalanche energy rating of the TPH4R606NH,L1Q and how is it tested?
The TPH4R606NH,L1Q is rated for 133 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 24 V, Tch = 25 °C (initial), L = 0.18 mH, RG = 1 Ω, and IAR = 32 A. This rating ensures robustness against inductive switching transients in motor drives and DC-DC converters. The TPH4R606NH,L1Q is not rated for repetitive avalanche operation.
How does the SOP Advance package of the TPH4R606NH,L1Q improve thermal performance?
The SOP Advance (2-5Q1S) package of the TPH4R606NH,L1Q integrates an exposed drain thermal pad across pins 5–8, achieving Rth(ch-c) = 1.98 °C/W-more than 2× better than standard SO-8. This allows direct heat transfer to inner-layer or bottom-side copper pours. The triple-source configuration (pins 1–3) also lowers parasitic inductance, reducing switching overshoot and improving thermal stability under high di/dt.
Is the TPH4R606NH,L1Q suitable for automotive applications?
The TPH4R606NH,L1Q is not AEC-Q101 qualified and is not recommended for safety-critical automotive powertrain or chassis systems. However, it is used in non-safety automotive applications such as ADAS camera power supplies and infotainment subsystems where its 60 V rating, low RDS(ON), and small footprint meet functional requirements-subject to customer qualification per internal automotive standards.
TPH4R606NH,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.6mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 49 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3965 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta), 63W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP Advance (5x5)
TPH4R606NH,L1Q FAQ
1.How can I place an order for TPH4R606NH,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPH4R606NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPH4R606NH,L1Q reliable?
The price and inventory of TPH4R606NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH4R606NH,L1Q is usually 5 days.
3.What payment methods are accepted for TPH4R606NH,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH4R606NH,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPH4R606NH,L1Q?
TPH4R606NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPH4R606NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPH4R606NH,L1Q?
For technical support, including TPH4R606NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH4R606NH,L1Q requirements.
6.How does Aetrix verify that TPH4R606NH,L1Q is sourced from the original manufacturer or authorized distributors?
All TPH4R606NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH4R606NH,L1Q meets industry standards.
7.What is the process for return or replacement of TPH4R606NH,L1Q?
All TPH4R606NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH4R606NH,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPH4R606NH,L1Q part is unused and in its original packaging.
Return procedure for TPH4R606NH,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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