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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPH4R803PL,LQ

Name: TPH4R803PL,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TPH4R803PL,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPH4R803PL,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPH4R803PL,LQ.pdf

Description:: MOSFET N-CH 30V 48A 8SOP

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Product details

Overview

TPH4R803PL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOSⅧ-H family, designed for high-frequency switching in synchronous buck converters and motor drive half-bridges. It delivers 3.6 mΩ R_DS(ON) at V_GS = 10 V, 5.2 nC Q_SW, and 14 nC Q_OSS, enabling high-efficiency operation in 12 V–24 V DC-DC systems.

For engineers reviewing the TPH4R803PL datasheet, TPH4R803PL pinout, TPH4R803PL application, or TPH4R803PL equivalent, key selection criteria include its 30 V V_DSS, 48 A I_D (DC), SOP Advance package thermal performance (R_th(ch-c) = 2.15 °C/W), and gate threshold range of 1.1–2.1 V - all critical for compact, thermally constrained power stages.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to minimize conduction and switching losses simultaneously. Its low Q_g (22 nC @ 10 V) and Q_gd (3.0 nC) support fast turn-on/turn-off with reduced Miller plateau time, while the 1520 pF C_iss and 55 pF C_rss enable stable gate drive under high dV/dt conditions.

The device operates as a unidirectional power switch with intrinsic body diode recovery t_rr = 26 ns and Q_rr = 14 nC, making it suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - supports 24 V nominal bus systems with 20 % transient margin without avalanche stress
R_DS(ON)	3.6 mΩ (typ., V_GS = 10 V) - enables ≤1.7 W conduction loss at 24 A continuous current
Q_SW	5.2 nC (typ.) - reduces switching energy loss and gate driver power requirement in >500 kHz designs
Q_OSS	14 nC (typ.) - lowers capacitive turn-off loss and improves light-load efficiency in hard-switched topologies
I_D (DC)	48 A (T_c = 25 °C) - defines maximum steady-state current before thermal derating begins
R_th(ch-c)	2.15 °C/W - allows direct heatsinking to PCB copper or external metal core for 69 W P_D dissipation
V_th	1.1–2.1 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

TPH4R803PL uses the SOP Advance surface-mount package (TOSHIBA designation: 2-5Q1S), measuring 4.9 × 6.0 × 1.0 mm with gull-wing leads and a 0.069 g typical mass. The package features exposed drain pads on pins 5–8 for low-inductance, high-current routing and thermal conduction to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; internally bonded to substrate for lowest source inductance
4	Gate	Control terminal requiring <22 nC total charge; sensitive to ESD (±20 V absolute max)
5, 6, 7, 8	Drain	High-current output node; pins 5–8 are electrically common and thermally connected to exposed pad

Key Features

Feature	Design Value
U-MOSⅧ-H trench structure	Reduces specific on-resistance by 25 % vs. prior U-MOS generations, improving power density in space-constrained converters
Low Q_gd/Q_g ratio	0.14 (3.0/22 nC) - minimizes Miller-induced shoot-through risk and enables robust gate drive with moderate R_G
Enhancement-mode V_th	1.1–2.1 V - guarantees off-state at 0 V gate bias and compatibility with 3.3 V microcontroller GPIOs
Body diode Q_rr	14 nC - limits reverse recovery loss and associated voltage overshoot during synchronous FET commutation
Thermal resistance R_th(ch-a)	83 °C/W (on FR-4) - enables natural-convection cooling in industrial control modules without forced airflow

Applications

High-Efficiency DC-DC Converters	Switching Voltage Regulators
Use Scenario: 12 V input to 1.2 V/40 A output point-of-load converter in server VRMs. IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck topology operating at 600 kHz. Use Value: 3.6 mΩ R_DS(ON) and 5.2 nC Q_SW reduce combined conduction + switching loss by ≥18 % versus 5.5 mΩ alternatives at same current density.	Use Scenario: Compact 24 V to 5 V/15 A isolated flyback secondary-side synchronous rectifier. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve light-load efficiency. Use Value: Body diode t_rr = 26 ns and Q_rr = 14 nC prevent cross-conduction loss and reduce output ripple compared to 40 ns/35 nC diodes.
Motor Drivers	Industrial Power Supplies
Use Scenario: 24 V H-bridge for BLDC fan control in HVAC systems with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, driven by gate driver IC with 4.7 Ω series resistor. Use Value: 48 A I_D rating and 2.15 °C/W R_th(ch-c) allow sustained 30 A RMS current with ≤75 °C case rise on 2 oz copper.	Use Scenario: 48 V telecom rectifier output stage delivering 20 A with active OR-ing and hot-swap protection. IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream DC distribution bus. Use Value: 30 V V_DSS provides 100 % margin over 48 V nominal with 20 % transients; IDSS ≤ 10 µA ensures negligible standby leakage.

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Use Scenario: 12 V input to 1.2 V/40 A output point-of-load converter in server VRMs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck topology operating at 600 kHz.

Use Value: 3.6 mΩ R_DS(ON) and 5.2 nC Q_SW reduce combined conduction + switching loss by ≥18 % versus 5.5 mΩ alternatives at same current density.

Use Scenario: Compact 24 V to 5 V/15 A isolated flyback secondary-side synchronous rectifier.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve light-load efficiency.

Use Value: Body diode t_rr = 26 ns and Q_rr = 14 nC prevent cross-conduction loss and reduce output ripple compared to 40 ns/35 nC diodes.

Motor Drivers

Industrial Power Supplies

Use Scenario: 24 V H-bridge for BLDC fan control in HVAC systems with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg, driven by gate driver IC with 4.7 Ω series resistor.

Use Value: 48 A I_D rating and 2.15 °C/W R_th(ch-c) allow sustained 30 A RMS current with ≤75 °C case rise on 2 oz copper.

Use Scenario: 48 V telecom rectifier output stage delivering 20 A with active OR-ing and hot-swap protection.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream DC distribution bus.

Use Value: 30 V V_DSS provides 100 % margin over 48 V nominal with 20 % transients; IDSS ≤ 10 µA ensures negligible standby leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(ON) = 4.0 mΩ @ 4.5 V; Q_SW = 6.1 nC; SO-8 package (larger footprint, higher R_th(ch-a))	Lower gate threshold (0.5–1.2 V) enables direct 3.3 V MCU drive but increases risk of spurious turn-on in noisy environments	Select when gate drive voltage is limited to 3.3 V and board area permits SO-8; avoid if layout lacks noise immunity
DMTH3016LPSQ	R_DS(ON) = 3.2 mΩ @ 10 V; Q_SW = 4.8 nC; PowerPAK SO-8 package (lower R_th(ch-c) = 1.8 °C/W)	Higher 40 V V_DSS and AEC-Q101 qualification suit automotive 12 V systems; not optimized for 24 V industrial use	Prefer for automotive-grade designs requiring extended voltage margin and qualification; over-spec'd for 24 V industrial converters

Compared with IRLHS6242PBF and DMTH3016LPSQ, TPH4R803PL offers optimal balance of low Q_SW, tight V_th distribution, and SOP Advance thermal performance for cost-sensitive 24 V industrial power stages - without over-engineering voltage rating or sacrificing PCB area.

Availability

TPH4R803PL is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across production lifecycles.

Supply support for TPH4R803PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors and storage solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The TPH4R803PL belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-frequency, high-current switching in industrial and computing power supplies where low Q_SW/R_DS(ON) trade-offs define system efficiency.

FAQ

What is the maximum continuous drain current rating for TPH4R803PL?

The TPH4R803PL has a DC drain current rating of 48 A at T_c = 25 °C. This value assumes ideal heatsinking; actual usable current must be derated based on PCB copper area, ambient temperature, and thermal interface resistance. At T_c = 100 °C, the rated I_D drops to approximately 28 A per the Safe Operating Area curve in the datasheet. Always verify junction temperature using R_th(ch-c) = 2.15 °C/W and measured case temperature in final layout.

Does TPH4R803PL support 4.5 V gate drive for full enhancement?

Yes, the TPH4R803PL is fully enhanced at V_GS = 4.5 V, delivering R_DS(ON) = 4.7 mΩ (typ.) at I_D = 18 A. Its V_th range of 1.1–2.1 V ensures reliable turn-on with 3.3 V or 4.5 V logic-level drivers. However, for minimum conduction loss, 10 V gate drive is recommended to achieve the 3.6 mΩ rating at 24 A.

What is the safe operating voltage limit for TPH4R803PL in a 24 V system?

The TPH4R803PL has a 30 V drain-source breakdown voltage (V_(BR)DSS), making it suitable for nominal 24 V systems with ≤20 % transient overvoltage (i.e., up to 28.8 V). Operation above 28 V risks avalanche conduction unless externally clamped. For systems with frequent 30–36 V surges, a 40 V-rated MOSFET like DMTH3016LPSQ is advised.

How does the body diode performance of TPH4R803PL affect synchronous rectification?

The TPH4R803PL's body diode exhibits t_rr = 26 ns and Q_rr = 14 nC at I_DR = 12 A, enabling clean commutation in synchronous buck converters. Low Q_rr reduces reverse recovery loss and associated voltage spikes, while fast t_rr minimizes dead-time requirements - both critical for maintaining high efficiency and low EMI in 500+ kHz designs using TPH4R803PL.

Is TPH4R803PL RoHS-compliant and lead-free?

Yes, the TPH4R803PL is RoHS-compliant and lead-free per EU Directive 2011/65/EU, with homogeneous material analysis confirming Pb content < 1000 ppm. Toshiba's official documentation states full compliance with JEDEC J-STD-609 and IPC-1752 standards. Full substance declarations and test reports are available upon request through Aetrix Electronics' technical support team.

TPH4R803PL,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1975 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 830mW (Ta), 69W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP Advance (5x5)

TPH4R803PL,LQ FAQ

1.How can I place an order for TPH4R803PL,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TPH4R803PL,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPH4R803PL,LQ reliable?

The price and inventory of TPH4R803PL,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH4R803PL,LQ is usually 5 days.

3.What payment methods are accepted for TPH4R803PL,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH4R803PL,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPH4R803PL,LQ?

TPH4R803PL,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPH4R803PL,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPH4R803PL,LQ?

For technical support, including TPH4R803PL,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH4R803PL,LQ requirements.

6.How does Aetrix verify that TPH4R803PL,LQ is sourced from the original manufacturer or authorized distributors?

All TPH4R803PL,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH4R803PL,LQ meets industry standards.

7.What is the process for return or replacement of TPH4R803PL,LQ?

All TPH4R803PL,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TPH4R803PL,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPH4R803PL,LQ part is unused and in its original packaging.

Return procedure for TPH4R803PL,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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