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Toshiba Semiconductor and Storage TPH5R906NH,L1Q
- Part No.:
- TPH5R906NH,L1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
TPH5R906NH,L1Q.pdf
- Description:
- MOSFET N-CH 60V 28A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:24,969
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Product details
Overview
TPH5R906NH,L1Q from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers RDS(ON) = 4.8 mΩ (typ.) at VGS = 10 V, QSW = 18 nC (typ.), and supports 71 A DC drain current with 60 V VDSS, enabling compact, high-current power stages in industrial and embedded systems.
For engineers reviewing the TPH5R906NH,L1Q datasheet, TPH5R906NH,L1Q pinout, TPH5R906NH,L1Q application, or TPH5R906NH,L1Q equivalent, key selection criteria include low conduction loss, fast switching capability, thermal performance on standard PCBs, and compatibility with gate drivers delivering ≥10 V drive voltage in synchronous buck topologies.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to optimize RDS(ON) × Qg figure-of-merit for hard-switched applications. Its enhancement-mode threshold (Vth = 2.0–4.0 V) ensures reliable turn-on with standard logic-level or 10 V gate drivers.
The device features integrated body diode with VDSF = −1.2 V (typ.) at IDR = 28 A and exhibits low Crss = 50 pF (typ.) to minimize Miller-induced shoot-through risk in half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage compatible with 48 V input bus systems and automotive 36 V nominal rails. |
| RDS(ON) (VGS = 10 V) | 4.8 mΩ (typ.) - Enables ≤0.1 W conduction loss at 14 A, reducing heatsink requirements in high-current regulators. |
| QSW | 18 nC (typ.) - Supports >500 kHz switching in synchronous buck converters without excessive gate drive power. |
| ID (DC) | 71 A - Rated for continuous operation at Tc = 25 °C, suitable for high-power density point-of-load designs. |
| Ciss | 2340 pF (typ.) - Input capacitance determines gate driver sizing and impacts turn-on delay in high-frequency PWM control. |
| Rth(ch-c) | 2.19 °C/W - Enables direct thermal coupling to copper planes or heatsinks, critical for maintaining Tch ≤ 150 °C under load. |
Pinout & Package
TPH5R906NH,L1Q uses the SOP Advance (TOSHIBA 2-5Q1S) surface-mount package - an 8-pin, small-footprint, thin-profile leaded package optimized for high-current PCB mounting and thermal dissipation via exposed drain pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal parallel die; connects directly to PCB ground plane for low-inductance return path. |
| 4 | Gate | Control terminal requiring <20 V max drive; low Ciss and Qg enable fast, low-loss switching with standard MOSFET drivers. |
| 5, 6, 7, 8 | Drain | High-current output node tied internally to multiple drain fingers; pins 5–8 are electrically common and thermally connected to exposed pad. |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench process | Delivers industry-leading RDS(ON) × Qg trade-off for reduced total switching + conduction losses in 300–1000 kHz SMPS. |
| Low QSW = 18 nC | Minimizes gate drive power and propagation delay skew in multi-phase synchronous rectifiers. |
| Enhancement-mode Vth = 2.0–4.0 V | Ensures guaranteed turn-off at 0 V gate bias and robust noise immunity in noisy industrial environments. |
| Low IDSS = 10 µA (max) | Reduces standby leakage in always-on power rails and battery-backed subsystems where quiescent current matters. |
Applications
| Switching Voltage Regulators | Motor Drivers |
|---|---|
Use Scenario: High-current synchronous buck converter for FPGA core voltage (0.8–1.2 V @ up to 60 A). IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer from input bus to output inductor. Use Value: 4.8 mΩ RDS(ON) limits conduction loss to <0.3 W at 60 A, while 18 nC QSW enables clean 600 kHz switching without excessive gate drive overhead. |
Use Scenario: H-bridge driver stage for 24 V brushed DC motors in industrial actuators (15–30 A peak). IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during PWM-controlled direction reversal. Use Value: 71 A DC rating and 84 A pulsed current support sustained torque delivery; low RDS(ON) reduces thermal stress during stall conditions. |
| DC-DC Converters | Power Supply Units |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V telecom DC-DC module. IC Role / Device Role / Timing Role: Active rectification switch replacing Schottky diode to improve efficiency at light-to-full load. Use Value: Fast turn-on (ton = 22 ns typ.) and low VDSF (−1.2 V) of integrated body diode reduce reverse recovery losses and improve light-load regulation. |
Use Scenario: Primary-side high-frequency switch in compact AC-DC adapter (65 W, 90–264 VAC input). IC Role / Device Role / Timing Role: Main switching transistor in quasi-resonant flyback topology operating at 65–130 kHz. Use Value: 124 mJ single-pulse avalanche energy rating provides margin against voltage spikes during transformer reset, enhancing reliability without snubber complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(ON) = 5.2 mΩ (VGS = 10 V), Qg = 22 nC, SO-8 package - higher gate charge increases drive loss at >300 kHz. | Marginally higher conduction loss; less optimal for high-frequency, high-current synchronous rectification. | Prefer TPH5R906NH,L1Q when minimizing Qg-related losses or operating above 400 kHz. |
| DMN6075SFD-13 | RDS(ON) = 5.0 mΩ (VGS = 10 V), Qg = 19 nC, PowerDI5060 package - different footprint, no pin compatibility. | Thermal resistance differs significantly (Rth(ch-a) = 50 °C/W vs. 78.1 °C/W); requires layout rework. | Select TPH5R906NH,L1Q for drop-in replacement in existing SOP Advance layouts with proven thermal performance on FR4. |
Compared with IRF7470PBF and DMN6075SFD-13, TPH5R906NH,L1Q offers the lowest QSW/RDS(ON) ratio among these 60 V MOSFETs, making it preferred for high-efficiency, high-frequency power conversion where gate drive loss and thermal management are critical constraints.
Availability
TPH5R906NH,L1Q is available at Aetrix Electronics and suitable for switching voltage regulators, motor drivers, and DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.
Supply support for TPH5R906NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, miniaturization, and reliability for industrial and consumer systems.
TPH5R906NH,L1Q belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion and motor control applications demanding low RDS(ON) and fast switching.
FAQ
What is the maximum continuous drain current rating for TPH5R906NH,L1Q?
The TPH5R906NH,L1Q is rated for 71 A DC drain current at case temperature Tc = 25 °C. This rating assumes proper PCB copper area and thermal management per Toshiba's recommended layout for the SOP Advance package. At higher temperatures or with limited copper, derating applies per the Rth(ch-c) = 2.19 °C/W specification.
Does TPH5R906NH,L1Q support 5 V gate drive?
No - TPH5R906NH,L1Q is not specified for reliable operation with 5 V gate drive. Its Vth range is 2.0–4.0 V, but RDS(ON) is only guaranteed at VGS = 10 V (4.8 mΩ typ.). At VGS = 5 V, RDS(ON) rises significantly (not characterized in datasheet), risking excessive conduction loss and thermal runaway under load.
What is the avalanche energy rating of TPH5R906NH,L1Q?
The TPH5R906NH,L1Q has a single-pulse avalanche energy rating EAS = 124 mJ (tested at VDD ≈ 48 V, Tch = 25 °C, L = 0.22 mH, RG = 1 Ω). This rating provides design margin against inductive voltage spikes in flyback or motor drive circuits but is not intended for repetitive avalanche operation.
Is TPH5R906NH,L1Q RoHS compliant and halogen-free?
Yes - TPH5R906NH,L1Q meets RoHS Directive 2011/65/EU requirements and is halogen-free per Toshiba's environmental compliance documentation. The "L1Q" suffix denotes lead-free, RoHS-compliant packaging with matte tin plating on leads and halogen-free molding compound.
How is thermal performance affected by PCB layout for TPH5R906NH,L1Q?
TPH5R906NH,L1Q's Rth(ch-a) varies from 44.6 °C/W (mounted on glass-epoxy board type a) to 78.1 °C/W (board type b) - indicating strong dependence on copper area and via count under the exposed drain pad. Optimal cooling requires ≥200 mm² of 2-oz copper connected via ≥6 thermal vias to inner/ground planes, per Toshiba's recommended footprint.
TPH5R906NH,L1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.9mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3100 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta), 57W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP Advance (5x5)
TPH5R906NH,L1Q FAQ
1.How can I place an order for TPH5R906NH,L1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TPH5R906NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPH5R906NH,L1Q reliable?
The price and inventory of TPH5R906NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH5R906NH,L1Q is usually 5 days.
3.What payment methods are accepted for TPH5R906NH,L1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH5R906NH,L1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPH5R906NH,L1Q?
TPH5R906NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPH5R906NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPH5R906NH,L1Q?
For technical support, including TPH5R906NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH5R906NH,L1Q requirements.
6.How does Aetrix verify that TPH5R906NH,L1Q is sourced from the original manufacturer or authorized distributors?
All TPH5R906NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH5R906NH,L1Q meets industry standards.
7.What is the process for return or replacement of TPH5R906NH,L1Q?
All TPH5R906NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH5R906NH,L1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPH5R906NH,L1Q part is unused and in its original packaging.
Return procedure for TPH5R906NH,L1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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