Toshiba Semiconductor and Storage TPH6R003NL,LQ

Overview

TPH6R003NL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOS-H process, designed for high-efficiency DC-DC converters and synchronous buck regulators. It delivers R_DS(ON) = 6.8 mΩ (typ.) at V_GS = 4.5 V, Q_SW = 4.3 nC (typ.), and supports continuous drain current up to 57 A (T_c = 25 °C), enabling compact, high-frequency switching power stages.

For engineers reviewing the TPH6R003NL datasheet, TPH6R003NL pinout, TPH6R003NL application, or TPH6R003NL equivalent, key selection criteria include low gate charge for fast switching, 30 V V_DSS rating suitable for 12–24 V input rails, SOP Advance package thermal performance, and verified operation in synchronous rectification topologies.

Technical Context

The TPH6R003NL employs Toshiba's U-MOS-H trench-gate structure to achieve optimized trade-offs between conduction loss and switching loss. Its enhancement-mode threshold voltage (V_th = 1.3–2.3 V) ensures reliable turn-on with standard logic-level drivers, while low C_iss (1050 pF typ.) and C_rss (37 pF typ.) support stable high-frequency operation up to several hundred kHz.

Thermal design is enabled by its channel-to-case resistance of 3.67 °C/W and SOP Advance footprint (2-5Q1S), allowing direct mounting on copper-clad PCBs for effective heat transfer. The device integrates an intrinsic body diode with V_DSF = −1.2 V (typ.) at I_DR = 38 A, supporting bidirectional current flow in synchronous rectifier configurations.

Key Specifications

Pinout & Package

SOP Advance package (TOSHIBA designation: 2-5Q1S), 8-pin surface-mount, 0.069 g typical weight, optimized for thermal dissipation via exposed drain pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRLHS6242PBF and DMN3025LFG-7, the TPH6R003NL offers the best balance of low Q_SW and mid-range R_DS(ON) in a thermally efficient SOP Advance package-ideal for 300–800 kHz DC-DC converters where both efficiency and layout simplicity matter.

Availability

TPH6R003NL is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for TPH6R003NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon process innovation and reliability engineering.

The TPH6R003NL belongs to Toshiba's U-MOS-H power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, industrial, and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for the TPH6R003NL at 25 °C case temperature?

The TPH6R003NL has a maximum continuous drain current (I_D) rating of 57 A when the case temperature (T_c) is maintained at 25 °C. This rating assumes adequate PCB copper area for heat dissipation and is defined under silicon-limited conditions-not ambient temperature. At higher case temperatures, derating applies per the PD–Tc curve in the datasheet. Always verify thermal design using the specified R_th(ch-c) = 3.67 °C/W value for the TPH6R003NL.

Does the TPH6R003NL support logic-level gate drive, and what is its typical gate threshold voltage?

Yes, the TPH6R003NL supports logic-level gate drive with a typical gate threshold voltage (V_th) of 1.3–2.3 V at V_DS = 10 V and I_D = 0.2 mA. This range ensures reliable turn-on using standard 3.3 V or 5 V microcontroller outputs without requiring gate voltage boosting. The device remains fully enhanced well within this window, making it suitable for direct GPIO control in low-voltage control architectures involving the TPH6R003NL.

What is the typical total gate charge (Q_g) of the TPH6R003NL, and how does it impact switching performance?

The TPH6R003NL has a typical total gate charge (Q_g) of 17 nC at V_DD ≈ 15 V, V_GS = 10 V, and I_D = 38 A. Its low gate switch charge (Q_SW) of 4.3 nC (typ.) directly reduces switching transition time and driver power loss. This enables efficient operation above 500 kHz in synchronous buck converters, especially when paired with low-R_DS(ON) and low-C_iss-key advantages of the TPH6R003NL in high-frequency POL designs.

Can the TPH6R003NL be used in synchronous rectification applications, and what body diode characteristics does it offer?

Yes, the TPH6R003NL is suitable for synchronous rectification due to its integrated body diode, characterized by a typical forward voltage (V_DSF) of −1.2 V at I_DR = 38 A and V_GS = 0 V. Its reverse recovery behavior is optimized for hard-switched and resonant topologies. While not a dedicated Schottky replacement, the TPH6R003NL's low V_DSF and controlled recovery support efficient bidirectional current handling in buck, boost, and LLC secondary-side applications.

What package type does the TPH6R003NL use, and how does it support thermal management?

The TPH6R003NL uses the SOP Advance package (TOSHIBA designation: 2-5Q1S), an 8-pin surface-mount variant with exposed drain terminals (pins 5–8) and source leads (pins 1–3). Its channel-to-case thermal resistance is 3.67 °C/W, enabling efficient heat transfer to the PCB copper layer. This package allows high-power operation without external heatsinks in properly designed layouts-making the TPH6R003NL ideal for space-constrained, convection-cooled power stages.