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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TPH7R506NH,L1Q

Name: TPH7R506NH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH7R506NH,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPH7R506NH,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPH7R506NH,L1Q.pdf

Description:: MOSFET N-CH 60V 22A 8SOP

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Product details

Overview

TPH7R506NH,L1Q from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers 6.1 mΩ R_DS(ON) at V_GS = 10 V, 14 nC typical gate charge, and supports 55 A continuous drain current with 60 V V_DSS, enabling compact, high-power-density power stages.

For engineers reviewing the TPH7R506NH,L1Q datasheet, TPH7R506NH,L1Q pinout, TPH7R506NH,L1Q application, or TPH7R506NH,L1Q equivalent, key selection criteria include low conduction loss, fast switching capability, thermal performance on standard PCBs, and compatibility with 60 V-class synchronous buck topologies.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve optimized cell density and reduced specific on-resistance. Its 8-pin SOP Advance package integrates four parallel drain terminals and triple-source bonding to minimize package inductance and improve current sharing.

The device operates in enhancement mode with a 2.0–4.0 V threshold voltage and exhibits low Crss (40 pF typ.) and Ciss (1785 pF typ.), supporting high-frequency PWM operation up to several hundred kHz while maintaining low switching losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Supports input rails up to 48 V nominal with margin for transient spikes in industrial and telecom power supplies.
R_DS(ON) (V_GS = 10 V)	6.1 mΩ (typ.) - Enables <1 W conduction loss at 40 A, critical for thermally constrained 12–48 V DC-DC stages.
Q_SW	14 nC (typ.) - Reduces gate drive power and enables efficient operation above 300 kHz in synchronous rectification.
I_D (continuous)	55 A - Rated for high-current output stages without external heatsinking when mounted on 2-layer FR-4 with copper fill.
R_th(ch-a) (t = 10 s)	78.1 °C/W - Defines thermal rise under pulsed load conditions on standard PCB layouts per JEDEC JESD51-2.
C_iss	1785 pF (typ.) - Influences gate drive strength requirements and EMI behavior in hard-switched topologies.

Pinout & Package

TPH7R506NH,L1Q uses the 8-pin SOP Advance (TOSHIBA 2-5Q1S) surface-mount package - ultra-thin (1.0 mm max height), small footprint (5.0 × 6.0 mm), and optimized for automated assembly and thermal relief via exposed drain pads.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal die; requires low-inductance ground plane routing to minimize shoot-through risk.
4	Gate	Control terminal with 1.0 Ω typical gate resistance; sensitive to ESD and requires RC snubbing in high-dV/dt environments.
5, 6, 7, 8	Drain	Parallel drain terminals tied to internal die metallization; must be connected to high-current power plane with thermal vias.

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	6.1 mΩ @ 10 V enables >95% efficiency in 48 V → 12 V 50 A buck converters with minimal thermal derating.
Low Q_SW	14 nC reduces gate driver power dissipation and allows use of low-cost SOT-23 drivers in space-constrained designs.
Enhancement-mode V_th	2.0–4.0 V ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers without level-shifting.
SOP Advance package	8-pin layout with quad-drain and triple-source terminals lowers parasitic inductance by ~30% vs. standard SO-8 in high-frequency switching.

Applications

Server VRM Power Stage	Industrial Motor Drive Half-Bridge
Use Scenario: High-current, high-frequency point-of-load regulation for CPU/GPU core voltage in enterprise servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter operating at 500–1000 kHz. Use Value: 6.1 mΩ R_DS(ON) and 14 nC Q_SW jointly reduce total power loss by ≥15% versus legacy SO-8 MOSFETs at 40 A load.	Use Scenario: H-bridge leg in 24–48 V brushless DC motor control for factory automation actuators. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch with bootstrap gate drive, switching at ≤20 kHz. Use Value: 55 A I_D rating and 60 V V_DSS support peak currents up to 66 A during motor stall without avalanche stress.
Telecom DC-DC Module	Automotive ADAS Power Supply
Use Scenario: Primary switch in isolated 48 V → 12 V DC-DC modules for 5G base station power distribution. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC topology with zero-voltage switching assist. Use Value: Low C_iss (1785 pF) and Crss (40 pF) minimize ringing and EMI during fast turn-on, easing EMC compliance.	Use Scenario: Power switch in 12 V rail conditioning for radar and camera modules in ADAS ECUs. IC Role / Device Role / Timing Role: Load switch or PWM-controlled power path with overcurrent protection and thermal foldback. Use Value: -55 to 150 °C operating range and 150 °C channel temperature limit meet AEC-Q101 stress requirements for under-hood deployment.

Server VRM Power Stage

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-frequency point-of-load regulation for CPU/GPU core voltage in enterprise servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter operating at 500–1000 kHz.

Use Value: 6.1 mΩ R_DS(ON) and 14 nC Q_SW jointly reduce total power loss by ≥15% versus legacy SO-8 MOSFETs at 40 A load.

Use Scenario: H-bridge leg in 24–48 V brushless DC motor control for factory automation actuators.

IC Role / Device Role / Timing Role: N-channel high-side or low-side switch with bootstrap gate drive, switching at ≤20 kHz.

Use Value: 55 A I_D rating and 60 V V_DSS support peak currents up to 66 A during motor stall without avalanche stress.

Telecom DC-DC Module

Automotive ADAS Power Supply

Use Scenario: Primary switch in isolated 48 V → 12 V DC-DC modules for 5G base station power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC topology with zero-voltage switching assist.

Use Value: Low C_iss (1785 pF) and Crss (40 pF) minimize ringing and EMI during fast turn-on, easing EMC compliance.

Use Scenario: Power switch in 12 V rail conditioning for radar and camera modules in ADAS ECUs.

IC Role / Device Role / Timing Role: Load switch or PWM-controlled power path with overcurrent protection and thermal foldback.

Use Value: -55 to 150 °C operating range and 150 °C channel temperature limit meet AEC-Q101 stress requirements for under-hood deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	Higher R_DS(ON) (7.5 mΩ), larger SO-8 package, no quad-drain configuration.	Limited to ≤300 kHz switching due to higher C_iss (2200 pF); less suitable for ultra-compact VRMs.	Prefer TPH7R506NH,L1Q where board area and thermal resistance are constrained.
DMN6075SFD-13	Lower voltage rating (60 V same), but higher Q_g (25 nC) and R_DS(ON) (7.5 mΩ); PowerDI5060 package.	Better thermal performance on large copper areas, but slower switching limits high-frequency efficiency.	Select TPH7R506NH,L1Q when gate drive power and switching frequency are primary constraints.

Compared with IRF7470PBF and DMN6075SFD-13, TPH7R506NH,L1Q offers the lowest combined R_DS(ON) × Q_SW figure-of-merit (86 mΩ·nC), making it optimal for high-efficiency, high-density 48 V intermediate bus converters where both conduction and switching losses must be minimized.

Availability

TPH7R506NH,L1Q is available at Aetrix Electronics and suitable for server VRM power stages, industrial motor drives, telecom DC-DC modules, and automotive ADAS power supplies requiring stable component supply across multi-year production cycles.

Supply support for TPH7R506NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in discrete transistor design and manufacturing.

TPH7R506NH,L1Q belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching applications in datacenter, industrial, and automotive power systems.

FAQ

What is the maximum continuous drain current rating for TPH7R506NH,L1Q?

The TPH7R506NH,L1Q is rated for 55 A continuous drain current (I_D) at T_c = 25 °C. This rating assumes proper PCB thermal design per JEDEC standards - specifically, mounting on a glass-epoxy board with adequate copper area and thermal vias. At elevated case temperatures, derating applies per the datasheet's thermal curves.

Does TPH7R506NH,L1Q support logic-level gate drive?

Yes, TPH7R506NH,L1Q supports logic-level gate drive: its gate threshold voltage (V_th) ranges from 2.0 to 4.0 V at V_DS = 10 V and I_D = 0.3 mA. This allows direct interfacing with 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry, simplifying control-stage design.

What is the recommended PCB layout practice for TPH7R506NH,L1Q's drain terminals?

TPH7R506NH,L1Q features four dedicated drain pins (5–8). To maximize thermal and electrical performance, all four must be connected to a common high-current power plane using multiple thermal vias (≥6 per pin) and minimum 2 oz copper. Avoid daisy-chaining drains - instead, use star-routing from the MOSFET pad to minimize loop inductance and voltage overshoot.

Is TPH7R506NH,L1Q suitable for avalanche-rated applications?

TPH7R506NH,L1Q is not avalanche-rated for repetitive operation. While it specifies single-pulse avalanche energy (E_AS) of 132 mJ, Toshiba does not guarantee repetitive avalanche capability. For circuits subject to inductive switching stress (e.g., motor drives), external clamping or snubbing is required to prevent device failure.

What is the gate-source leakage current specification for TPH7R506NH,L1Q?

The gate-source leakage current (I_GSS) for TPH7R506NH,L1Q is specified as ±0.1 µA maximum at V_GS = ±20 V and V_DS = 0 V. This low leakage supports stable gate biasing in high-impedance drive circuits and contributes to low static power consumption in always-on power switches.

TPH7R506NH,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2320 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP Advance (5x5)

TPH7R506NH,L1Q FAQ

1.How can I place an order for TPH7R506NH,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPH7R506NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPH7R506NH,L1Q reliable?

The price and inventory of TPH7R506NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH7R506NH,L1Q is usually 5 days.

3.What payment methods are accepted for TPH7R506NH,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH7R506NH,L1Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPH7R506NH,L1Q?

TPH7R506NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPH7R506NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPH7R506NH,L1Q?

For technical support, including TPH7R506NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH7R506NH,L1Q requirements.

6.How does Aetrix verify that TPH7R506NH,L1Q is sourced from the original manufacturer or authorized distributors?

All TPH7R506NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH7R506NH,L1Q meets industry standards.

7.What is the process for return or replacement of TPH7R506NH,L1Q?

All TPH7R506NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH7R506NH,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPH7R506NH,L1Q part is unused and in its original packaging.

Return procedure for TPH7R506NH,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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