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Toshiba Semiconductor and Storage TPH8R008NH,L1Q

Name: TPH8R008NH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH8R008NH,L1Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPH8R008NH,L1Q

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: TPH8R008NH,L1Q.pdf

Description:: MOSFET N-CH 80V 34A 8SOP

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Product details

Overview

TPH8R008NH,L1Q from Toshiba is an N-channel power MOSFET in SOP Advance (2-5Q1S) package, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 6.6 mΩ (typ.) at V_GS = 10 V, Q_SW = 13 nC (typ.), and supports 80 V V_DSS, 63 A I_D (DC), and 147 A I_DP (pulsed) - enabling compact, high-current power stages.

For engineers reviewing the TPH8R008NH,L1Q datasheet, TPH8R008NH,L1Q pinout, TPH8R008NH,L1Q application, or TPH8R008NH,L1Q equivalent, this device is selected for low-conduction-loss, fast-switching power conversion where thermal performance under high pulse current and gate drive efficiency are critical design factors.

Technical Context

This U-MOSⅧ-H silicon MOSFET uses a trench-gate structure optimized for reduced R_DS(ON) × Q_g figure-of-merit. Its enhancement-mode threshold voltage (V_th = 2.0–4.0 V) ensures reliable turn-on with standard 3.3 V/5 V logic-level gate drivers while maintaining low IDSS leakage (≤10 µA at 80 V).

The device integrates a built-in body diode with V_DSF = −1.2 V (typ.) at 34 A and supports single-pulse avalanche energy up to 94 mJ. Thermal resistance R_th(ch-c) = 2.04 °C/W enables high-power operation when mounted on PCB copper areas per Figure 5.1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Maximum blocking voltage before avalanche; suitable for 48 V bus and 60 V transient clamp designs.
R_DS(ON) (V_GS = 10 V)	6.6 mΩ (typ.) - Enables ≤1.1 W conduction loss at 17 A DC, reducing heatsink requirements.
Q_SW	13 nC (typ.) - Low gate switch charge minimizes driver power and switching transition time.
I_D (DC)	63 A - Rated continuous drain current at T_c = 25 °C; limited by silicon, not package (package limit: 60 A).
C_iss	2300 pF (typ.) - Input capacitance impacts gate drive loop stability and Miller effect during hard switching.
R_th(ch-c)	2.04 °C/W - Channel-to-case thermal resistance allows direct thermal coupling to heatsink or copper plane.

Pinout & Package

TPH8R008NH,L1Q is housed in the SOP Advance (TOSHIBA 2-5Q1S) surface-mount package - a thin, small-outline package with exposed drain pad for enhanced thermal dissipation. Weight: 0.069 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; tied to PCB ground plane for low-inductance layout.
4	Gate	Control terminal requiring <2.0–4.0 V threshold; sensitive to ESD - requires gate resistor and clamping.
5, 6, 7, 8	Drain	High-side switching node; connected to exposed copper pad for thermal and current handling.

Key Features

Feature	Design Value
U-MOSⅧ-H trench process	Delivers industry-leading R_DS(ON) × Q_g trade-off for high-frequency synchronous rectification.
Low Q_SW / Q_gd ratio	Q_gd = 8.1 nC (typ.) vs. Q_SW = 13 nC - reduces Miller-induced shoot-through risk in half-bridge topologies.
Enhancement-mode V_th	2.0–4.0 V range ensures compatibility with both 3.3 V and 5 V microcontroller GPIOs without level-shifting.
Low IDSS leakage	≤10 µA at 80 V V_DS - maintains system standby power integrity in always-on applications.

Applications

DC-DC Converters	Switching Voltage Regulators
Use Scenario: High-density 12 V → 1 V/30 A point-of-load converter in server VRMs. IC Role / Device Role / Timing Role: Synchronous high-side switch in buck topology operating at 500 kHz–1 MHz. Use Value: 6.6 mΩ R_DS(ON) and 13 nC Q_SW reduce total power loss and enable smaller output inductors.	Use Scenario: Industrial 24 V input adjustable step-down regulator for PLC I/O modules. IC Role / Device Role / Timing Role: Main switching FET controlled by PWM controller with external gate driver. Use Value: 80 V V_DSS provides margin against 40 V transients; SOP Advance package simplifies automated assembly.
Motor Drivers	Power OR-ing Circuits
Use Scenario: 24 V BLDC gate driver stage for fan or pump control in HVAC systems. IC Role / Device Role / Timing Role: Half-bridge low-side switch with fast turn-off (t_f = 12 ns typ.) for precise commutation timing. Use Value: Low C_oss (520 pF typ.) and high I_DP (147 A) support robust PWM-driven motor phase current.	Use Scenario: Redundant 48 V telecom power supply with active OR-ing to prevent backfeed. IC Role / Device Role / Timing Role: Ideal diode replacement with body diode forward voltage of −1.2 V at 34 A. Use Value: Low V_DSF and R_DS(ON) cut conduction loss by >60% versus Schottky diodes, improving system efficiency.

DC-DC Converters

Switching Voltage Regulators

Use Scenario: High-density 12 V → 1 V/30 A point-of-load converter in server VRMs.

IC Role / Device Role / Timing Role: Synchronous high-side switch in buck topology operating at 500 kHz–1 MHz.

Use Value: 6.6 mΩ R_DS(ON) and 13 nC Q_SW reduce total power loss and enable smaller output inductors.

Use Scenario: Industrial 24 V input adjustable step-down regulator for PLC I/O modules.

IC Role / Device Role / Timing Role: Main switching FET controlled by PWM controller with external gate driver.

Use Value: 80 V V_DSS provides margin against 40 V transients; SOP Advance package simplifies automated assembly.

Motor Drivers

Power OR-ing Circuits

Use Scenario: 24 V BLDC gate driver stage for fan or pump control in HVAC systems.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with fast turn-off (t_f = 12 ns typ.) for precise commutation timing.

Use Value: Low C_oss (520 pF typ.) and high I_DP (147 A) support robust PWM-driven motor phase current.

Use Scenario: Redundant 48 V telecom power supply with active OR-ing to prevent backfeed.

IC Role / Device Role / Timing Role: Ideal diode replacement with body diode forward voltage of −1.2 V at 34 A.

Use Value: Low V_DSF and R_DS(ON) cut conduction loss by >60% versus Schottky diodes, improving system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP80N085T	TO-220 package, higher R_DS(ON) (8.5 mΩ), larger Q_g (65 nC), no integrated thermal pad.	Requires heatsink mounting; unsuitable for ultra-thin or high-density layouts.	Select when board space is unconstrained and thermal management uses discrete heatsinks.
SiR872DP	PQFN 5×6 mm package, lower R_DS(ON) (5.0 mΩ), higher Q_g (42 nC), rated for 75 V V_DSS.	Better conduction loss but slower switching; needs stronger gate driver due to higher Q_g.	Select when minimizing conduction loss dominates over switching loss and layout allows larger footprint.

Compared with IXTP80N085T and SiR872DP, TPH8R008NH,L1Q offers the best balance of low-profile packaging, moderate gate charge, and competitive R_DS(ON) - making it optimal for space-constrained, medium-frequency power stages where thermal coupling to PCB is prioritized over discrete heatsinking.

Availability

TPH8R008NH,L1Q is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and switching voltage regulators requiring stable component supply across industrial, computing, and telecom production programs.

Supply support for TPH8R008NH,L1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions with emphasis on reliability, efficiency, and miniaturization for industrial and consumer systems.

TPH8R008NH,L1Q belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-current switching in compact power supplies and motor control circuits.

FAQ

What is the maximum continuous drain current rating for TPH8R008NH,L1Q?

The TPH8R008NH,L1Q has a maximum continuous drain current I_D of 63 A at case temperature T_c = 25 °C. This rating is limited by silicon capability; the package itself is rated for 60 A. Derating is required above 25 °C per the R_th(ch-c) = 2.04 °C/W thermal resistance curve in the datasheet.

Does TPH8R008NH,L1Q support logic-level gate drive?

Yes, TPH8R008NH,L1Q is an enhancement-mode MOSFET with a gate threshold voltage V_th of 2.0–4.0 V (measured at V_DS = 10 V, I_D = 0.5 mA), making it compatible with standard 3.3 V and 5 V logic-level gate drivers without requiring external level shifters.

What is the safe operating area (SOA) limitation for TPH8R008NH,L1Q in linear mode?

TPH8R008NH,L1Q is not rated for sustained linear (ohmic) operation. Its SOA curve (Figure 8.14) defines pulsed safe limits only - e.g., 34 A at 60 V for t ≤ 10 ms. Continuous linear use risks exceeding T_ch = 150 °C and must be avoided unless validated via thermal simulation and derating per Toshiba's Reliability Handbook.

How does the SOP Advance package of TPH8R008NH,L1Q improve thermal performance?

The SOP Advance (2-5Q1S) package features an exposed drain pad that serves as both current path and thermal interface. With R_th(ch-c) = 2.04 °C/W, it enables direct thermal transfer to PCB copper layers - achieving up to 3× better heat dissipation than standard SO-8 packages when using recommended land patterns per Figure 5.1.

Is TPH8R008NH,L1Q suitable for avalanche-rated applications?

Yes, TPH8R008NH,L1Q is characterized for single-pulse avalanche with E_AS = 94 mJ (V_DD = 60 V, T_ch = 25 °C, L = 0.069 mH, R_G = 1.0 Ω). It is not rated for repetitive avalanche; design must ensure energy per event stays within this limit and channel temperature remains ≤150 °C.

TPH8R008NH,L1Q Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 1.6W (Ta), 61W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP Advance (5x5)

TPH8R008NH,L1Q FAQ

1.How can I place an order for TPH8R008NH,L1Q through Aetrix?

Please submit a Request for Quotation (RFQ) for TPH8R008NH,L1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPH8R008NH,L1Q reliable?

The price and inventory of TPH8R008NH,L1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPH8R008NH,L1Q is usually 5 days.

3.What payment methods are accepted for TPH8R008NH,L1Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPH8R008NH,L1Q transactions.

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4.How is shipping managed for TPH8R008NH,L1Q?

TPH8R008NH,L1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPH8R008NH,L1Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPH8R008NH,L1Q?

For technical support, including TPH8R008NH,L1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPH8R008NH,L1Q requirements.

6.How does Aetrix verify that TPH8R008NH,L1Q is sourced from the original manufacturer or authorized distributors?

All TPH8R008NH,L1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPH8R008NH,L1Q meets industry standards.

7.What is the process for return or replacement of TPH8R008NH,L1Q?

All TPH8R008NH,L1Q units undergo pre-shipment inspection (PSI). If there is an issue with TPH8R008NH,L1Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPH8R008NH,L1Q part is unused and in its original packaging.

Return procedure for TPH8R008NH,L1Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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